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Semiconductors Diodes

BY500-200

BY500-200
Quantity excl. VAT VAT incl.
1 - 9 0.22$ 0.22$
10 - 24 0.21$ 0.21$
25 - 49 0.19$ 0.19$
50 - 99 0.18$ 0.18$
100 - 249 0.17$ 0.17$
250 - 418 0.15$ 0.15$
Quantity U.P
1 - 9 0.22$ 0.22$
10 - 24 0.21$ 0.21$
25 - 49 0.19$ 0.19$
50 - 99 0.18$ 0.18$
100 - 249 0.17$ 0.17$
250 - 418 0.15$ 0.15$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 418
Set of 1

BY500-200. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Forward current (AV): 5A. IFSM: 200A. MRI (max): 10uA. MRI (min): uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). Operating temperature: -50°C...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 400V. Spec info: Ifsm--200Ap, t=10ms. Quantity in stock updated on 25/12/2024, 05:25.

Technical documentation

Equivalent products :

Quantity in stock : 404
BY500-1000

BY500-1000

Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semic...
BY500-1000
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Forward current (AV): 5A. IFSM: 200A. MRI (max): 10uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Spec info: Ifsm--200App t=10mS
BY500-1000
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Forward current (AV): 5A. IFSM: 200A. MRI (max): 10uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Spec info: Ifsm--200App t=10mS
Set of 1
0.42$ VAT incl.
(0.42$ excl. VAT)
0.42$
Quantity in stock : 4279
BY500-800

BY500-800

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Func...
BY500-800
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Forward current (AV): 5A. IFSM: 200A. MRI (max): 10uA. MRI (min): 220A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 800V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm--200App t=10mS
BY500-800
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Forward current (AV): 5A. IFSM: 200A. MRI (max): 10uA. MRI (min): 220A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 800V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm--200App t=10mS
Set of 1
0.27$ VAT incl.
(0.27$ excl. VAT)
0.27$

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Quantity in stock : 41
BC560B

BC560B

Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: hFE 200...450. Collect...
BC560B
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Quantity in stock : 177
IRF1404Z

IRF1404Z

C(in): 4340pF. Cost): 1030pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 28 ns. Type o...
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2N6027

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Quantity per case: 1. Semiconductor material: silicon. Function: PUT.. Number of terminals: 3. Pd (P...
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ELC470UF200P-105-25X30-H

ELC470UF200P-105-25X30-H

DC voltage: 200V. Capacitance: 470uF. Diameter: 25mm. Lifespan: 2000 hours. Lenght: 30mm. Configurat...
ELC470UF200P-105-25X30-H
[LONGDESCRIPTION]
ELC470UF200P-105-25X30-H
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[LOT]
3.47$ VAT incl.
(3.47$ excl. VAT)
3.47$
Quantity in stock : 85
KBU8M

KBU8M

Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward c...
KBU8M
[LONGDESCRIPTION]
KBU8M
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0.96$ VAT incl.
(0.96$ excl. VAT)
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Quantity in stock : 404
BY500-1000

BY500-1000

Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semic...
BY500-1000
[LONGDESCRIPTION]
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[MODCATID]
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0.42$ VAT incl.
(0.42$ excl. VAT)
0.42$
Quantity in stock : 50
MUR880

MUR880

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75us. Semiconductor material: silicon. Functi...
MUR880
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1.65$ VAT incl.
(1.65$ excl. VAT)
1.65$
Quantity in stock : 27
PRW-10W-10K

PRW-10W-10K

Resistance: 10k Ohms. Power: 10W. Resistor type: electric wire winding. Temperature stability: 350pp...
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[LONGDESCRIPTION]
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0.89$ VAT incl.
(0.89$ excl. VAT)
0.89$
Quantity in stock : 907
MOF1145JAFSR200

MOF1145JAFSR200

Resistance: 0.20 Ohms. Power: 2W. Tolerance: 5%. Dimensions: 5x15.5mm. Maximum operating voltage: 60...
MOF1145JAFSR200
[LONGDESCRIPTION]
MOF1145JAFSR200
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0.15$ VAT incl.
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0.15$

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