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Semiconductors Diodes

BY500-200

BY500-200
Quantity excl. VAT VAT incl.
1 - 9 0.22$ 0.22$
10 - 24 0.21$ 0.21$
25 - 49 0.19$ 0.19$
50 - 99 0.19$ 0.19$
100 - 249 0.18$ 0.18$
250 - 366 0.16$ 0.16$
Quantity U.P
1 - 9 0.22$ 0.22$
10 - 24 0.21$ 0.21$
25 - 49 0.19$ 0.19$
50 - 99 0.19$ 0.19$
100 - 249 0.18$ 0.18$
250 - 366 0.16$ 0.16$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 366
Set of 1

BY500-200. Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 400V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 10uA. MRI (min): uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--200Ap, t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -50°C...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Original product from manufacturer Diotec. Quantity in stock updated on 21/05/2025, 04:25.

Technical documentation

Equivalent products :

Quantity in stock : 369
BY500-1000

BY500-1000

Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7...
BY500-1000
Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 1000V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 10uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--200App t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
BY500-1000
Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 1000V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 10uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--200App t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
0.42$ VAT incl.
(0.42$ excl. VAT)
0.42$
Quantity in stock : 4155
BY500-800

BY500-800

Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7...
BY500-800
Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 800V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 10uA. MRI (min): 220A. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--200App t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
BY500-800
Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 800V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 10uA. MRI (min): 220A. Number of terminals: 2. RoHS: yes. Spec info: Ifsm--200App t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
0.27$ VAT incl.
(0.27$ excl. VAT)
0.27$

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ELC470UF200P-105-25X30-H

ELC470UF200P-105-25X30-H

DC voltage: 200V. Capacitance: 470uF. Diameter: 25mm. Lifespan: 2000 hours. Lenght: 30mm. Configurat...
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3.47$ VAT incl.
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Quantity in stock : 369
BY500-1000

BY500-1000

Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7...
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MUR880

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PRW-10W-10K

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MOF1145JAFSR200

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