Standard and Rectifier Diodes

Semiconductor material: silicon. Forward current (AV): 1.2A. VRRM: 350V. Note: GI-S

Semiconductor material: silicon. Forward current (AV): 10A. VRRM: 1200V. Note: 11mm, 6-sided. Note: GI-L. Note: M5 thread

Semiconductor material: silicon. Forward current (AV): 1A. VRRM: 300V. Note: GI

Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: LED driver circuit 20mA/45V. Forward current (AV): 20mA. RoHS: yes. Housing: DO-214. Housing (according to data sheet): SMB ( 4.6x3.7x2.1mm ). Operating temperature: -50...+150°C. VRRM: 45V. Assembly/installation: surface-mounted component (SMD). Number of terminals: 2. Note: constant current LED driver. Operating temperature range max (°C): +150°C. Quantity per case: 1. Spec info: for a dissipation of 1W without cooling, max 25V

Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: LED driver circuit 40mA/45V. Forward current (AV): 40mA. RoHS: yes. Housing: DO-214. Housing (according to data sheet): SMB ( 4.6x3.7x2.1mm ). Operating temperature: -50...+150°C. VRRM: 45V. Assembly/installation: surface-mounted component (SMD). Number of terminals: 2. Note: constant current LED driver. Operating temperature range max (°C): +150°C. Quantity per case: 1. Spec info: for a dissipation of 1W without cooling, max 25V

Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 100 ns. Semiconductor material: Sb. Function: Schottky diode. Forward current (AV): 15A. IFSM: 150A. Number of terminals: 3. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.55V. VRRM: 40V. Spec info: Ifsm 150A (50Hz), Vf max 0.55V

Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 100 ns. Semiconductor material: Sb. Function: Schottky diode. Forward current (AV): 30A. IFSM: 300A. Number of terminals: 3. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.55V. VRRM: 40V. Spec info: Ifsm--300A (50Hz), Vf max--0.55V

Note: Uf 0.98V. Note: Ifsm--65App. Note: Ultra Fast Recovery Diode

Dielectric structure: common cathode. Double: Double. Semiconductor material: silicon. Function: ULTRA FAST DUAL DIODE. Forward current (AV): 5A. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. VRRM: 200V. Quantity per case: 2. Number of terminals: 3. Note: ULTRA FAST. Note: Ifsm--50A10mS. Spec info: IFSM--50A t=10mS

Dielectric structure: casing connected to the cathode. Function: power diode. Forward current (AV): 20A. IFSM: 275A. Bushing Thread: M5. Weight: 6g. Assembly/installation: screw. Housing: DO-4. Housing (according to data sheet): DO-4P. Operating temperature: -25...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Used for: can also be used for solar panel systems. Spec info: 275App/10ms

Dielectric structure: casing connected to the anode. Function: power diode. Forward current (AV): 20A. IFSM: 275A. Bushing Thread: M5. Weight: 6g. Assembly/installation: screw. Housing: DO-4. Housing (according to data sheet): DO-4P. Operating temperature: -25...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Spec info: 275App/10ms

Dielectric structure: casing connected to the cathode. Function: power diode. Forward current (AV): 40A. IFSM: 600A. Bushing Thread: M6. Assembly/installation: screw. Housing: DO-5. Housing (according to data sheet): DO-5P. Operating temperature: -25...+150°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1V. VRRM: 800V. Used for: can also be used for solar panel systems. Spec info: 600App/10ms

Dielectric structure: casing connected to the anode. Function: power diode. Forward current (AV): 40A. IFSM: 600A. Bushing Thread: M6. Assembly/installation: screw. Housing: DO-5. Housing (according to data sheet): DO-5P. Operating temperature: -25...+150°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1V. VRRM: 800V. Used for: can also be used for solar panel systems. Spec info: 600App/10ms

Housing: DO-205. Housing (according to data sheet): DO-205AC. Note: Reversed DO-8P, M12 thread. Note: Threaded housing--Anode, (high current). Used for: can also be used for solar panel systems

Conditioning: plastic tube. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'Fast Recovery Rectifiers'. Forward current (AV): 15.9A. IFSM: 300A. Temperature: +125°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3. Operating temperature: -40...+125°C. Threshold voltage Vf (max): 1.6V. VRRM: 600V. Number of terminals: 3. Conditioning unit: 50

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: Ultra Fast Recovery Rectifiers. Forward current (AV): 20A. IFSM: 255A. MRI (max): 500uA. MRI (min): 20uA. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220L. Operating temperature: -40...+125°C. Threshold voltage Vf (max): 1.6V. Forward voltage Vf (min): 1.6V. VRRM: 800V. Number of terminals: 3. Quantity per case: 1. Spec info: trr 4us (IF=0.9A, IR=1.5A)

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Forward current (AV): 25A. IFSM: 350A. MRI (max): 500uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). Operating temperature: -40...+125°C. Threshold voltage Vf (max): 1.6V. Forward voltage Vf (min): 1.6V. VRRM: 800V. Number of terminals: 3. Note: cathode (1), anode (2), not connected (3). Note: insulated TO220 package. Quantity per case: 1. Function: trr 4us (IF=0.9A, IR=1.5A). Spec info: 350Ap

Double: Double. Semiconductor material: silicon. Forward current (AV): 0.2A. Marking on the case: UMD3. Assembly/installation: surface-mounted component (SMD). Housing: SOT-323. Housing (according to data sheet): SOT-323. VRRM: 20V. Note: Ultra High Speed Switching. Note: screen printing/CMS code UMD3

Cj: 1.8pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: high voltage rectifier diode. Forward current (AV): 20mA. IFSM: 500mA. MRI (min): 5uA. Dimensions: 3x12mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): 3x12mm. Flammability class: UL94V-0. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 40V. Number of terminals: 2. Quantity per case: 1. VRRM: 12000V

Cj: 1.8pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: high voltage rectifier diode. Forward current (AV): 20mA. IFSM: 500mA. MRI (min): 5uA. Dimensions: 3x12mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): 3x12mm. Flammability class: UL94V-0. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 40V. Number of terminals: 2. Quantity per case: 1. VRRM: 16000V

Semiconductor material: silicon. Forward current (AV): 5A. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 1500V. Note: Ultrahigh-Definition Display Applications. Note: 50App/10ms, Silicon Diffused Junction Type

Cj: 90pF. Dielectric structure: common cathode. Trr Diode (Min.): 30 ns. Semiconductor material: silicon. Function: high efficiency ultrafast diode. Forward current (AV): 20A. IFSM: 180A. Marking on the case: 20LC30. Temperature: +150°C. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1V. VRRM: 300V. Quantity per case: 2. Number of terminals: 3. Spec info: IFSM--180Ap (1cycle)

Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 20us. Semiconductor material: silicon. Function: DIODE-RECTIFIER. Forward current (AV): 3A. IFSM: 100A. MRI (max): 100uA. MRI (min): 5uA. Marking on the case: DGP30L. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V. VRRM: 1500V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 100Ap

Double: Double. Semiconductor material: silicon. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): T0-220FPAB. VRRM: 1500V. Note: DAMPER +MODULATION. Note: dual silicon diode

Double: Double. Semiconductor material: silicon. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): T0-220AB. VRRM: 1500V. Note: DAMPER +MODULATION. Note: dual silicon diode