Standard and Rectifier Diodes

Dielectric structure: casing connected to the anode. Function: power diode. Forward current (AV): 20A. IFSM: 275A. Bushing Thread: M5. Weight: 6g. Assembly/installation: screw. Housing: DO-4. Housing (according to data sheet): DO-4P. Operating temperature: -25...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Spec info: 275App/10ms

Dielectric structure: casing connected to the cathode. Function: power diode. Forward current (AV): 40A. IFSM: 600A. Bushing Thread: M6. Assembly/installation: screw. Housing: DO-5. Housing (according to data sheet): DO-5P. Operating temperature: -25...+150°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1V. VRRM: 800V. Used for: can also be used for solar panel systems. Spec info: 600App/10ms

Dielectric structure: casing connected to the anode. Function: power diode. Forward current (AV): 40A. IFSM: 600A. Bushing Thread: M6. Assembly/installation: screw. Housing: DO-5. Housing (according to data sheet): DO-5P. Operating temperature: -25...+150°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1V. VRRM: 800V. Used for: can also be used for solar panel systems. Spec info: 600App/10ms

Housing: DO-205. Housing (according to data sheet): DO-205AC. Note: Reversed DO-8P, M12 thread. Note: Threaded housing--Anode, (high current). Used for: can also be used for solar panel systems

Conditioning: plastic tube. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'Fast Recovery Rectifiers'. Forward current (AV): 15.9A. IFSM: 300A. Temperature: +125°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3. Operating temperature: -40...+125°C. Threshold voltage Vf (max): 1.6V. VRRM: 600V. Number of terminals: 3. Conditioning unit: 50

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: Ultra Fast Recovery Rectifiers. Forward current (AV): 20A. IFSM: 255A. MRI (max): 500uA. MRI (min): 20uA. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220L. Operating temperature: -40...+125°C. Threshold voltage Vf (max): 1.6V. Forward voltage Vf (min): 1.6V. VRRM: 800V. Number of terminals: 3. Quantity per case: 1. Spec info: trr 4us (IF=0.9A, IR=1.5A)

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Forward current (AV): 25A. IFSM: 350A. MRI (max): 500uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). Operating temperature: -40...+125°C. Threshold voltage Vf (max): 1.6V. Forward voltage Vf (min): 1.6V. VRRM: 800V. Number of terminals: 3. Note: cathode (1), anode (2), not connected (3). Note: insulated TO220 package. Quantity per case: 1. Function: trr 4us (IF=0.9A, IR=1.5A). Spec info: 350Ap

Double: Double. Semiconductor material: silicon. Forward current (AV): 0.2A. Marking on the case: UMD3. Assembly/installation: surface-mounted component (SMD). Housing: SOT-323. Housing (according to data sheet): SOT-323. VRRM: 20V. Note: Ultra High Speed Switching. Note: screen printing/CMS code UMD3

Cj: 1.8pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: high voltage rectifier diode. Forward current (AV): 20mA. IFSM: 500mA. MRI (min): 5uA. Dimensions: 3x12mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): 3x12mm. Flammability class: UL94V-0. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 40V. Number of terminals: 2. Quantity per case: 1. VRRM: 12000V

Cj: 1.8pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: high voltage rectifier diode. Forward current (AV): 20mA. IFSM: 500mA. MRI (min): 5uA. Dimensions: 3x12mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): 3x12mm. Flammability class: UL94V-0. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 40V. Number of terminals: 2. Quantity per case: 1. VRRM: 16000V

Semiconductor material: silicon. Forward current (AV): 5A. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 1500V. Note: Ultrahigh-Definition Display Applications. Note: 50App/10ms, Silicon Diffused Junction Type

Cj: 90pF. Dielectric structure: common cathode. Trr Diode (Min.): 30 ns. Semiconductor material: silicon. Function: high efficiency ultrafast diode. Forward current (AV): 20A. IFSM: 180A. Marking on the case: 20LC30. Temperature: +150°C. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1V. VRRM: 300V. Quantity per case: 2. Number of terminals: 3. Spec info: IFSM--180Ap (1cycle)

Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 20us. Semiconductor material: silicon. Function: DIODE-RECTIFIER. Forward current (AV): 3A. IFSM: 100A. MRI (max): 100uA. MRI (min): 5uA. Marking on the case: DGP30L. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V. VRRM: 1500V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 100Ap

Double: Double. Semiconductor material: silicon. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): T0-220FPAB. VRRM: 1500V. Note: DAMPER +MODULATION. Note: dual silicon diode

Double: Double. Semiconductor material: silicon. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): T0-220AB. VRRM: 1500V. Note: DAMPER +MODULATION. Note: dual silicon diode

Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Forward current (AV): 11A. IFSM: 75A. Pd (Power Dissipation, Max): 78W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.6V. Forward voltage Vf (min): 2.2A. VRRM: 1200V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 50. Spec info: 75Ap t=10ms, TVJ=150°C

Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Forward current (AV): 100A. IFSM: 600A. MRI (max): 20mA. MRI (min): 1.5mA. Pd (Power Dissipation, Max): 357W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode (FRED)'. Housing: TO-247. Housing (according to data sheet): TO-247AD. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.55V. VRRM: 1200V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 30. Spec info: 540Ap t=10ms, TVJ=150°C

Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Forward current (AV): 2x96A. IFSM: 1200A. MRI (max): 20mA. MRI (min): 1mA. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: screw. Technology: 'Epitaxial Diode'. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1.17V. VRRM: 600V. Conditioning unit: 10. Quantity per case: 2. Number of terminals: 4. Function: dual fast recovery diode. Spec info: 1200Ap t=10ms, TVJ=45°C, 1080Ap t=10ms, TVJ=150°C

Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Forward current (AV): 2x91A. IFSM: 900A. MRI (max): 15mA. MRI (min): 1.5mA. Pd (Power Dissipation, Max): 250W. Delivery time: KB. Assembly/installation: screw. Technology: 'Epitaxial Diode'. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.87V. Forward voltage Vf (min): 1.61V. VRRM: 1200V. Conditioning unit: 10. Quantity per case: 2. Note: epitaxial diode, high current. Note: 900App/10ms, 45°C. Function: dual fast recovery diode. Spec info: 810Ap t=10ms, TVJ=150°C

Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Forward current (AV): 2x123A. IFSM: 1200A. MRI (max): 20mA. MRI (min): 1mA. Pd (Power Dissipation, Max): 357W. RoHS: yes. Assembly/installation: screw. Technology: 'Epitaxial Diode'. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.89V. VRRM: 200V. Conditioning unit: 10. Quantity per case: 2. Number of terminals: 4. Function: dual fast recovery diode. Spec info: 1080Ap t=10ms, TVJ=150°C

Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Forward current (AV): 37A. IFSM: 375A. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Housing: TO-247. Housing (according to data sheet): TO-247AD. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.6V. Forward voltage Vf (min): 1.4V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 30. Spec info: 375Ap t=10ms, TVJ=150°C

Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Forward current (AV): 37A. IFSM: 375A. Pd (Power Dissipation, Max): 138W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Housing: TO-247. Housing (according to data sheet): TO-247AD. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.4V. Forward voltage Vf (min): 2V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 30. Spec info: 375Ap t=10ms, TVJ=150°C

Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Forward current (AV): 28A. IFSM: 200A. Pd (Power Dissipation, Max): 138W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Housing: TO-247. Housing (according to data sheet): TO-247AD. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.55V. Forward voltage Vf (min): 2.2V. VRRM: 1200V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 30. Spec info: 375Ap t=10ms, TVJ=150°C

Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Forward current (AV): 60A. IFSM: 500A. Pd (Power Dissipation, Max): 189W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Housing: TO-247. Housing (according to data sheet): TO-247AD. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.3V. Forward voltage Vf (min): 1.8V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 30. Spec info: 450Ap t=10ms, TVJ=150°C

Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: 'Fast Recovery'. Forward current (AV): 52A. IFSM: 500A. Pd (Power Dissipation, Max): 189W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode'. Housing: TO-247. Housing (according to data sheet): TO-247AD. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.55V. Forward voltage Vf (min): 2V. VRRM: 1200V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 30. Spec info: 450Ap t=10ms, TVJ=150°C