Electronic components and equipment, for businesses and individuals
Semiconductors Diodes
Standard and Rectifier Diodes

Standard and Rectifier Diodes

557 products available
Products per page :
Quantity in stock : 4693
US1M

US1M

Forward current (AV): 1A. IFSM: 30A. Housing (according to data sheet): SMA (4.6x2.8 mm). VRRM: 1000...
US1M
Forward current (AV): 1A. IFSM: 30A. Housing (according to data sheet): SMA (4.6x2.8 mm). VRRM: 1000V. Conditioning: roll. Conditioning unit: 5000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast silicon rectifier diode. Equivalents: US1M-13-F, US1M-E3/5AT, US1M-E3/61T, US1M-TP. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V
US1M
Forward current (AV): 1A. IFSM: 30A. Housing (according to data sheet): SMA (4.6x2.8 mm). VRRM: 1000V. Conditioning: roll. Conditioning unit: 5000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast silicon rectifier diode. Equivalents: US1M-13-F, US1M-E3/5AT, US1M-E3/61T, US1M-TP. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V
Set of 10
1.52$ VAT incl.
(1.52$ excl. VAT)
1.52$
Quantity in stock : 2689
US1M-E3-61T

US1M-E3-61T

VRRM: 600V. Average Rectified Current per Diode: 1A. Diode type: rectifier diode. Diode Configuratio...
US1M-E3-61T
VRRM: 600V. Average Rectified Current per Diode: 1A. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.7V / 1A. Mounting Type: SMD. Reverse Leakage Current: 10uA / 1000V. Reverse Recovery Time (Max): 75ns
US1M-E3-61T
VRRM: 600V. Average Rectified Current per Diode: 1A. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.7V / 1A. Mounting Type: SMD. Reverse Leakage Current: 10uA / 1000V. Reverse Recovery Time (Max): 75ns
Set of 1
0.29$ VAT incl.
(0.29$ excl. VAT)
0.29$
Quantity in stock : 99
VS-12F120

VS-12F120

Forward current (AV): 12A. IFSM: 265A. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet)...
VS-12F120
Forward current (AV): 12A. IFSM: 265A. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. VRRM: 1200V. Quantity per case: 1. Dielectric structure: casing connected to the cathode. Semiconductor material: silicon. Function: High peak current capability. Note: M5 thread. MRI (max): 12mA. Number of terminals: 1. RoHS: yes. Spec info: IFSM--480App / 10mS (100% Vrrm). Assembly/installation: Threaded fastening. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.88V. Forward voltage Vf (min): 0.77V
VS-12F120
Forward current (AV): 12A. IFSM: 265A. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. VRRM: 1200V. Quantity per case: 1. Dielectric structure: casing connected to the cathode. Semiconductor material: silicon. Function: High peak current capability. Note: M5 thread. MRI (max): 12mA. Number of terminals: 1. RoHS: yes. Spec info: IFSM--480App / 10mS (100% Vrrm). Assembly/installation: Threaded fastening. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.88V. Forward voltage Vf (min): 0.77V
Set of 1
10.47$ VAT incl.
(10.47$ excl. VAT)
10.47$
Quantity in stock : 174
VS-60APU04-N3

VS-60APU04-N3

Forward current (AV): 60A. IFSM: 600A. Housing: TO-247. Housing (according to data sheet): TO-247AC ...
VS-60APU04-N3
Forward current (AV): 60A. IFSM: 600A. Housing: TO-247. Housing (according to data sheet): TO-247AC 3L. Cj: 50pF. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. MRI (max): 2mA. MRI (min): 50uA. Equivalents: 60APU04PBF, VS-60APU04PBF. Number of terminals: 3. RoHS: yes. Spec info: pinout 60EPUxx 1. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.87V
VS-60APU04-N3
Forward current (AV): 60A. IFSM: 600A. Housing: TO-247. Housing (according to data sheet): TO-247AC 3L. Cj: 50pF. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. MRI (max): 2mA. MRI (min): 50uA. Equivalents: 60APU04PBF, VS-60APU04PBF. Number of terminals: 3. RoHS: yes. Spec info: pinout 60EPUxx 1. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.87V
Set of 1
5.64$ VAT incl.
(5.64$ excl. VAT)
5.64$
Quantity in stock : 50
VS-8TQ100-M3

VS-8TQ100-M3

Forward current (AV): 8A. IFSM: 850A. Housing: TO-220. Housing (according to data sheet): TO-220-2 (...
VS-8TQ100-M3
Forward current (AV): 8A. IFSM: 850A. Housing: TO-220. Housing (according to data sheet): TO-220-2 (TO-220AC). VRRM: 100V. Function: Schottky rectifier diode. RoHS: yes. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Forward voltage Vf (min): 0.72V
VS-8TQ100-M3
Forward current (AV): 8A. IFSM: 850A. Housing: TO-220. Housing (according to data sheet): TO-220-2 (TO-220AC). VRRM: 100V. Function: Schottky rectifier diode. RoHS: yes. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Forward voltage Vf (min): 0.72V
Set of 1
1.90$ VAT incl.
(1.90$ excl. VAT)
1.90$
Quantity in stock : 89
WNS40100CQ

WNS40100CQ

Forward current (AV): 20A. IFSM: 165A. Housing: TO-220. Housing (according to data sheet): TO-220AC-...
WNS40100CQ
Forward current (AV): 20A. IFSM: 165A. Housing: TO-220. Housing (according to data sheet): TO-220AC-3P. VRRM: 100V. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Function: Dual power Schottky diode. MRI (max): 30mA. MRI (min): 50uA. Number of terminals: 3. RoHS: yes. Spec info: IFSM--330A (t=10ms), 363A (t=8.3ms) / diode. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.71V. Forward voltage Vf (min): 0.48V
WNS40100CQ
Forward current (AV): 20A. IFSM: 165A. Housing: TO-220. Housing (according to data sheet): TO-220AC-3P. VRRM: 100V. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Function: Dual power Schottky diode. MRI (max): 30mA. MRI (min): 50uA. Number of terminals: 3. RoHS: yes. Spec info: IFSM--330A (t=10ms), 363A (t=8.3ms) / diode. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.71V. Forward voltage Vf (min): 0.48V
Set of 1
1.53$ VAT incl.
(1.53$ excl. VAT)
1.53$
Quantity in stock : 6
YG911S2

YG911S2

Forward current (AV): 5A. VRRM: 200V. Semiconductor material: silicon. Note: plastic. Note: 0402-000...
YG911S2
Forward current (AV): 5A. VRRM: 200V. Semiconductor material: silicon. Note: plastic. Note: 0402-000491. Note: 50Ap / 10ms
YG911S2
Forward current (AV): 5A. VRRM: 200V. Semiconductor material: silicon. Note: plastic. Note: 0402-000491. Note: 50Ap / 10ms
Set of 1
4.04$ VAT incl.
(4.04$ excl. VAT)
4.04$

Information and technical help

By phone :

Payment and delivery

Delivery in 2-3 days, with postal tracking!

Subscribe to the newsletter

I agree to receive emails, and I understand that I can unsubscribe at any time after subscribing.

All rights reserved, RPtronics, 2024.