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Semiconductors Diodes
Standard and Rectifier Diodes

Standard and Rectifier Diodes

528 products available
Products per page :
1...345 67...22
Quantity in stock : 3190
BAV103

BAV103

Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semic...
BAV103
Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forward current (AV): 250mA. IFSM: 1A. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80 ( 3.5x1.5mm ). Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 250V. Function: Small Signals Switching Diodes, High Voltage
BAV103
Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forward current (AV): 250mA. IFSM: 1A. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80 ( 3.5x1.5mm ). Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 250V. Function: Small Signals Switching Diodes, High Voltage
Set of 10
0.53$ VAT incl.
(0.53$ excl. VAT)
0.53$
Out of stock
BAV18-TAP

BAV18-TAP

Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semic...
BAV18-TAP
Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: General purpose diodes. Forward current (AV): 0.25A. IFSM: 1A. Note: IFSM--1App tp= 1s, Tj=25°C. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V. VRRM: 60V
BAV18-TAP
Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: General purpose diodes. Forward current (AV): 0.25A. IFSM: 1A. Note: IFSM--1App tp= 1s, Tj=25°C. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V. VRRM: 60V
Set of 10
0.51$ VAT incl.
(0.51$ excl. VAT)
0.51$
Quantity in stock : 9426
BAV20

BAV20

Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semic...
BAV20
Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: General purpose diodes. Forward current (AV): 0.25A. IFSM: 1A. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V. VRRM: 200V. Spec info: IFSM--1App tp=1s, Tj=25°C
BAV20
Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: General purpose diodes. Forward current (AV): 0.25A. IFSM: 1A. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V. VRRM: 200V. Spec info: IFSM--1App tp=1s, Tj=25°C
Set of 10
0.61$ VAT incl.
(0.61$ excl. VAT)
0.61$
Quantity in stock : 29226
BAV21

BAV21

Cj: 5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semicon...
BAV21
Cj: 5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: General purpose diodes. Forward current (AV): 0.25A. IFSM: 1A. Note: S. Note: IFSM--1App tp= 1s, Tj=25°C. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V. VRRM: 250V
BAV21
Cj: 5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: General purpose diodes. Forward current (AV): 0.25A. IFSM: 1A. Note: S. Note: IFSM--1App tp= 1s, Tj=25°C. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V. VRRM: 250V
Set of 10
0.59$ VAT incl.
(0.59$ excl. VAT)
0.59$
Quantity in stock : 26583
BAW27

BAW27

Semiconductor material: silicon. Forward current (AV): 0.6A. Note: Ifsm--4A/1uS. Number of terminals...
BAW27
Semiconductor material: silicon. Forward current (AV): 0.6A. Note: Ifsm--4A/1uS. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35 ( 1.6x3.9mm ). VRRM: 75V. Note: Small Signals Switching Diode
BAW27
Semiconductor material: silicon. Forward current (AV): 0.6A. Note: Ifsm--4A/1uS. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35 ( 1.6x3.9mm ). VRRM: 75V. Note: Small Signals Switching Diode
Set of 25
0.72$ VAT incl.
(0.72$ excl. VAT)
0.72$
Quantity in stock : 2074
BAW56

BAW56

Cj: 2pF. Quantity per case: 2. Dielectric structure: common anode. Trr Diode (Min.): 4 ns. Semicondu...
BAW56
Cj: 2pF. Quantity per case: 2. Dielectric structure: common anode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: Ultra High Speed Switching. Forward current (AV): 200mA. IFSM: 1A. Note: screen printing/SMD code A1s. MRI (max): 50uA. MRI (min): 0.15uA. Marking on the case: A1s. Number of terminals: 3. Temperature: +150°C. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.715V. VRRM: 80V. Spec info: Ifsm--4.5A t=1us, 1A t=1ms
BAW56
Cj: 2pF. Quantity per case: 2. Dielectric structure: common anode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: Ultra High Speed Switching. Forward current (AV): 200mA. IFSM: 1A. Note: screen printing/SMD code A1s. MRI (max): 50uA. MRI (min): 0.15uA. Marking on the case: A1s. Number of terminals: 3. Temperature: +150°C. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.715V. VRRM: 80V. Spec info: Ifsm--4.5A t=1us, 1A t=1ms
Set of 10
0.53$ VAT incl.
(0.53$ excl. VAT)
0.53$
Quantity in stock : 4015
BAW56W

BAW56W

RoHS: yes. Cj: 2pF. Quantity per case: 2. Dielectric structure: common anode. Trr Diode (Min.): 4 ns...
BAW56W
RoHS: yes. Cj: 2pF. Quantity per case: 2. Dielectric structure: common anode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: Ultra High Speed Switching. Forward current (AV): 200mA. IFSM: 1A. Note: screen printing/SMD code A1. MRI (max): 50uA. MRI (min): 0.15uA. Marking on the case: A1. Number of terminals: 3. Temperature: +150°C. Assembly/installation: surface-mounted component (SMD). Housing: SOT-323. Housing (according to data sheet): SOT323. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.715V. VRRM: 85V. Spec info: Ifsm--4.5A t=1us, 1A t=1ms
BAW56W
RoHS: yes. Cj: 2pF. Quantity per case: 2. Dielectric structure: common anode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: Ultra High Speed Switching. Forward current (AV): 200mA. IFSM: 1A. Note: screen printing/SMD code A1. MRI (max): 50uA. MRI (min): 0.15uA. Marking on the case: A1. Number of terminals: 3. Temperature: +150°C. Assembly/installation: surface-mounted component (SMD). Housing: SOT-323. Housing (according to data sheet): SOT323. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.715V. VRRM: 85V. Spec info: Ifsm--4.5A t=1us, 1A t=1ms
Set of 10
0.45$ VAT incl.
(0.45$ excl. VAT)
0.45$
Quantity in stock : 17
BAY93

BAY93

Semiconductor material: silicon. Forward current (AV): 0.115A. VRRM: 25V...
BAY93
Semiconductor material: silicon. Forward current (AV): 0.115A. VRRM: 25V
BAY93
Semiconductor material: silicon. Forward current (AV): 0.115A. VRRM: 25V
Set of 10
0.75$ VAT incl.
(0.75$ excl. VAT)
0.75$
Quantity in stock : 236
BAY94

BAY94

Semiconductor material: silicon. Forward current (AV): 0.115A. VRRM: 35V...
BAY94
Semiconductor material: silicon. Forward current (AV): 0.115A. VRRM: 35V
BAY94
Semiconductor material: silicon. Forward current (AV): 0.115A. VRRM: 35V
Set of 10
0.96$ VAT incl.
(0.96$ excl. VAT)
0.96$
Quantity in stock : 100
BB131

BB131

Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: VHF variable capacit...
BB131
Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: VHF variable capacitance diode. Forward current (AV): 20mA. MRI (max): 200nA. MRI (min): 10nA. Capacitance: 0.7pF. RoHS: yes. Frequency band: VHF. Assembly/installation: surface-mounted component (SMD). Housing: SOD-323. Housing (according to data sheet): SOD-323 ( 1.8x1.35mm ). Operating temperature: -55...+125°C. VRRM: 30 v. Number of terminals: 2. Note: Varicap Diode. Quantity per case: 1. Capacitance: 17pF
BB131
Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: VHF variable capacitance diode. Forward current (AV): 20mA. MRI (max): 200nA. MRI (min): 10nA. Capacitance: 0.7pF. RoHS: yes. Frequency band: VHF. Assembly/installation: surface-mounted component (SMD). Housing: SOD-323. Housing (according to data sheet): SOD-323 ( 1.8x1.35mm ). Operating temperature: -55...+125°C. VRRM: 30 v. Number of terminals: 2. Note: Varicap Diode. Quantity per case: 1. Capacitance: 17pF
Set of 1
0.51$ VAT incl.
(0.51$ excl. VAT)
0.51$
Quantity in stock : 16
BB139

BB139

Note: Varicap Diode...
BB139
Note: Varicap Diode
BB139
Note: Varicap Diode
Set of 1
0.89$ VAT incl.
(0.89$ excl. VAT)
0.89$
Quantity in stock : 37
BB409

BB409

Note: Varicap Diode...
BB409
Note: Varicap Diode
BB409
Note: Varicap Diode
Set of 1
1.90$ VAT incl.
(1.90$ excl. VAT)
1.90$
Quantity in stock : 152
BS890

BS890

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward curre...
BS890
Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward current (AV): 8A. IFSM: 155A. MRI (max): 20mA. MRI (min): 5mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 7.5x5.4mm ). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.83V. Forward voltage Vf (min): 0.75V. VRRM: 90V. Number of terminals: 2. Function: Schottky Barrier Rectifier Diode, Axial Leads. Spec info: Ifsm 132Ap t=10us
BS890
Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward current (AV): 8A. IFSM: 155A. MRI (max): 20mA. MRI (min): 5mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 7.5x5.4mm ). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.83V. Forward voltage Vf (min): 0.75V. VRRM: 90V. Number of terminals: 2. Function: Schottky Barrier Rectifier Diode, Axial Leads. Spec info: Ifsm 132Ap t=10us
Set of 1
0.59$ VAT incl.
(0.59$ excl. VAT)
0.59$
Quantity in stock : 232
BY12

BY12

Cj: 1.8pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Sem...
BY12
Cj: 1.8pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: high voltage rectifier diode. Forward current (AV): 0.5A. IFSM: 30A. MRI (max): 25uA. MRI (min): 1uA. Number of terminals: 2. Dimensions: 7.3x22mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): 7.3x22mm. Flammability class: UL94V-0. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 10V. VRRM: 12000V
BY12
Cj: 1.8pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: high voltage rectifier diode. Forward current (AV): 0.5A. IFSM: 30A. MRI (max): 25uA. MRI (min): 1uA. Number of terminals: 2. Dimensions: 7.3x22mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): 7.3x22mm. Flammability class: UL94V-0. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 10V. VRRM: 12000V
Set of 1
3.65$ VAT incl.
(3.65$ excl. VAT)
3.65$
Quantity in stock : 10707
BY133

BY133

RoHS: yes. Housing: DO-41. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr ...
BY133
RoHS: yes. Housing: DO-41. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): DO-41. Semiconductor material: silicon. Forward current (AV): 1A. IFSM: 30A. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): DO-41 ( 2.6x4.8mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1300V. Spec info: IFSM--30Ap t=8.3mS
BY133
RoHS: yes. Housing: DO-41. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): DO-41. Semiconductor material: silicon. Forward current (AV): 1A. IFSM: 30A. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): DO-41 ( 2.6x4.8mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1300V. Spec info: IFSM--30Ap t=8.3mS
Set of 10
0.49$ VAT incl.
(0.49$ excl. VAT)
0.49$
Quantity in stock : 6
BY188G

BY188G

Semiconductor material: silicon. Forward current (AV): 1.2A. VRRM: 50V...
BY188G
Semiconductor material: silicon. Forward current (AV): 1.2A. VRRM: 50V
BY188G
Semiconductor material: silicon. Forward current (AV): 1.2A. VRRM: 50V
Set of 1
0.93$ VAT incl.
(0.93$ excl. VAT)
0.93$
Quantity in stock : 100
BY203-20S

BY203-20S

Quantity per case: 1. Diode Tff(25°C): 300 ns. Semiconductor material: silicon. Forward current (AV...
BY203-20S
Quantity per case: 1. Diode Tff(25°C): 300 ns. Semiconductor material: silicon. Forward current (AV): 0.25A. IFSM: 20A. MRI (max): 2uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass passivated. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 2.4V. VRRM: 2000V. Spec info: IFSM--20Ap t=10ms
BY203-20S
Quantity per case: 1. Diode Tff(25°C): 300 ns. Semiconductor material: silicon. Forward current (AV): 0.25A. IFSM: 20A. MRI (max): 2uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass passivated. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 2.4V. VRRM: 2000V. Spec info: IFSM--20Ap t=10ms
Set of 1
1.16$ VAT incl.
(1.16$ excl. VAT)
1.16$
Out of stock
BY208-600

BY208-600

Semiconductor material: silicon. Forward current (AV): 0.75A. VRRM: 600V...
BY208-600
Semiconductor material: silicon. Forward current (AV): 0.75A. VRRM: 600V
BY208-600
Semiconductor material: silicon. Forward current (AV): 0.75A. VRRM: 600V
Set of 1
0.40$ VAT incl.
(0.40$ excl. VAT)
0.40$
Out of stock
BY226

BY226

Semiconductor material: silicon. Forward current (AV): 1.5A. Note: GR. VRRM: 650V...
BY226
Semiconductor material: silicon. Forward current (AV): 1.5A. Note: GR. VRRM: 650V
BY226
Semiconductor material: silicon. Forward current (AV): 1.5A. Note: GR. VRRM: 650V
Set of 1
0.26$ VAT incl.
(0.26$ excl. VAT)
0.26$
Quantity in stock : 2
BY228-TH

BY228-TH

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor mate...
BY228-TH
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. Function: heat sink mounting. Forward current (AV): 3A. IFSM: 50A. Note: 4.2x4.3mm. MRI (max): 140uA. MRI (min): 2uA. Marking on the case: 97053100. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.5V. VRRM: 1500V. Spec info: IFSM--50Ap (t=10ms)
BY228-TH
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. Function: heat sink mounting. Forward current (AV): 3A. IFSM: 50A. Note: 4.2x4.3mm. MRI (max): 140uA. MRI (min): 2uA. Marking on the case: 97053100. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.5V. VRRM: 1500V. Spec info: IFSM--50Ap (t=10ms)
Set of 1
3.23$ VAT incl.
(3.23$ excl. VAT)
3.23$
Quantity in stock : 2534
BY228-VIS

BY228-VIS

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor mate...
BY228-VIS
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. Forward current (AV): 3A. IFSM: 50A. Note: 4.2x4.3mm. MRI (max): 140uA. MRI (min): 2uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass ( 4.2x4.3mm ). Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.5V. VRRM: 1500V. Spec info: IFSM--50Ap (tp=10ms)
BY228-VIS
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. Forward current (AV): 3A. IFSM: 50A. Note: 4.2x4.3mm. MRI (max): 140uA. MRI (min): 2uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass ( 4.2x4.3mm ). Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.5V. VRRM: 1500V. Spec info: IFSM--50Ap (tp=10ms)
Set of 1
1.24$ VAT incl.
(1.24$ excl. VAT)
1.24$
Quantity in stock : 131
BY297

BY297

Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semic...
BY297
Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Forward current (AV): 2A. IFSM: 70A. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 7.6x3.6mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 200V. Spec info: Ifms 70Ap
BY297
Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Forward current (AV): 2A. IFSM: 70A. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 7.6x3.6mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 200V. Spec info: Ifms 70Ap
Set of 10
1.18$ VAT incl.
(1.18$ excl. VAT)
1.18$
Quantity in stock : 3636
BY299

BY299

RoHS: yes. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50...
BY299
RoHS: yes. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Forward current (AV): 2A. IFSM: 70A. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 7.6x3.6mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 800V. Spec info: Ifms 70Ap
BY299
RoHS: yes. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Forward current (AV): 2A. IFSM: 70A. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 7.6x3.6mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 800V. Spec info: Ifms 70Ap
Set of 5
0.47$ VAT incl.
(0.47$ excl. VAT)
0.47$
Quantity in stock : 67
BY448

BY448

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor mate...
BY448
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. Forward current (AV): 2A. IFSM: 30A. MRI (max): 140uA. MRI (min): 3uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.6V. Forward voltage Vf (min): 1.6V. VRRM: 1500V. Spec info: IFSM--30Ap, t=10ms
BY448
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. Forward current (AV): 2A. IFSM: 30A. MRI (max): 140uA. MRI (min): 3uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.6V. Forward voltage Vf (min): 1.6V. VRRM: 1500V. Spec info: IFSM--30Ap, t=10ms
Set of 1
0.80$ VAT incl.
(0.80$ excl. VAT)
0.80$
Quantity in stock : 3
BY458

BY458

Semiconductor material: silicon. Forward current (AV): 4A. Note: 1000 ns. Note: 30App/10ms. Number o...
BY458
Semiconductor material: silicon. Forward current (AV): 4A. Note: 1000 ns. Note: 30App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): SOD-57. VRRM: 1200V
BY458
Semiconductor material: silicon. Forward current (AV): 4A. Note: 1000 ns. Note: 30App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): SOD-57. VRRM: 1200V
Set of 1
0.45$ VAT incl.
(0.45$ excl. VAT)
0.45$
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