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Semiconductors Diodes
Standard and Rectifier Diodes

Standard and Rectifier Diodes

513 products available
Products per page :
1...345 67...21
Quantity in stock : 32
BB139

BB139

Note: Varicap Diode...
BB139
Note: Varicap Diode
BB139
Note: Varicap Diode
Set of 1
0.89$ VAT incl.
(0.89$ excl. VAT)
0.89$
Quantity in stock : 37
BB409

BB409

Note: Varicap Diode...
BB409
Note: Varicap Diode
BB409
Note: Varicap Diode
Set of 1
1.90$ VAT incl.
(1.90$ excl. VAT)
1.90$
Quantity in stock : 154
BS890

BS890

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward curre...
BS890
Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward current (AV): 8A. IFSM: 155A. MRI (max): 20mA. MRI (min): 5mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 7.5x5.4mm ). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.83V. Forward voltage Vf (min): 0.75V. VRRM: 90V. Number of terminals: 2. Function: Schottky Barrier Rectifier Diode, Axial Leads. Spec info: Ifsm 132Ap t=10us
BS890
Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward current (AV): 8A. IFSM: 155A. MRI (max): 20mA. MRI (min): 5mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 7.5x5.4mm ). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.83V. Forward voltage Vf (min): 0.75V. VRRM: 90V. Number of terminals: 2. Function: Schottky Barrier Rectifier Diode, Axial Leads. Spec info: Ifsm 132Ap t=10us
Set of 1
0.59$ VAT incl.
(0.59$ excl. VAT)
0.59$
Quantity in stock : 232
BY12

BY12

Cj: 1.8pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Sem...
BY12
Cj: 1.8pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: high voltage rectifier diode. Forward current (AV): 0.5A. IFSM: 30A. MRI (max): 25uA. MRI (min): 1uA. Number of terminals: 2. Dimensions: 7.3x22mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): 7.3x22mm. Flammability class: UL94V-0. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 10V. VRRM: 12000V
BY12
Cj: 1.8pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Function: high voltage rectifier diode. Forward current (AV): 0.5A. IFSM: 30A. MRI (max): 25uA. MRI (min): 1uA. Number of terminals: 2. Dimensions: 7.3x22mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): 7.3x22mm. Flammability class: UL94V-0. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 10V. VRRM: 12000V
Set of 1
3.65$ VAT incl.
(3.65$ excl. VAT)
3.65$
Quantity in stock : 10785
BY133

BY133

RoHS: yes. Housing: DO-41. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr ...
BY133
RoHS: yes. Housing: DO-41. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): DO-41. Semiconductor material: silicon. Forward current (AV): 1A. IFSM: 30A. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): DO-41 ( 2.6x4.8mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1300V. Spec info: IFSM--30Ap t=8.3mS
BY133
RoHS: yes. Housing: DO-41. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): DO-41. Semiconductor material: silicon. Forward current (AV): 1A. IFSM: 30A. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): DO-41 ( 2.6x4.8mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1300V. Spec info: IFSM--30Ap t=8.3mS
Set of 10
0.49$ VAT incl.
(0.49$ excl. VAT)
0.49$
Quantity in stock : 6
BY188G

BY188G

Semiconductor material: silicon. Forward current (AV): 1.2A. VRRM: 50V...
BY188G
Semiconductor material: silicon. Forward current (AV): 1.2A. VRRM: 50V
BY188G
Semiconductor material: silicon. Forward current (AV): 1.2A. VRRM: 50V
Set of 1
0.93$ VAT incl.
(0.93$ excl. VAT)
0.93$
Quantity in stock : 100
BY203-20S

BY203-20S

Quantity per case: 1. Diode Tff(25°C): 300 ns. Semiconductor material: silicon. Forward current (AV...
BY203-20S
Quantity per case: 1. Diode Tff(25°C): 300 ns. Semiconductor material: silicon. Forward current (AV): 0.25A. IFSM: 20A. MRI (max): 2uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass passivated. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 2.4V. VRRM: 2000V. Spec info: IFSM--20Ap t=10ms
BY203-20S
Quantity per case: 1. Diode Tff(25°C): 300 ns. Semiconductor material: silicon. Forward current (AV): 0.25A. IFSM: 20A. MRI (max): 2uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass passivated. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 2.4V. VRRM: 2000V. Spec info: IFSM--20Ap t=10ms
Set of 1
1.16$ VAT incl.
(1.16$ excl. VAT)
1.16$
Out of stock
BY208-600

BY208-600

Semiconductor material: silicon. Forward current (AV): 0.75A. VRRM: 600V...
BY208-600
Semiconductor material: silicon. Forward current (AV): 0.75A. VRRM: 600V
BY208-600
Semiconductor material: silicon. Forward current (AV): 0.75A. VRRM: 600V
Set of 1
0.40$ VAT incl.
(0.40$ excl. VAT)
0.40$
Out of stock
BY226

BY226

Semiconductor material: silicon. Forward current (AV): 1.5A. Note: GR. VRRM: 650V...
BY226
Semiconductor material: silicon. Forward current (AV): 1.5A. Note: GR. VRRM: 650V
BY226
Semiconductor material: silicon. Forward current (AV): 1.5A. Note: GR. VRRM: 650V
Set of 1
0.26$ VAT incl.
(0.26$ excl. VAT)
0.26$
Quantity in stock : 2
BY228-TH

BY228-TH

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor mate...
BY228-TH
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. Function: heat sink mounting. Forward current (AV): 3A. IFSM: 50A. Note: 4.2x4.3mm. MRI (max): 140uA. MRI (min): 2uA. Marking on the case: 97053100. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.5V. VRRM: 1500V. Spec info: IFSM--50Ap (t=10ms)
BY228-TH
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. Function: heat sink mounting. Forward current (AV): 3A. IFSM: 50A. Note: 4.2x4.3mm. MRI (max): 140uA. MRI (min): 2uA. Marking on the case: 97053100. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.5V. VRRM: 1500V. Spec info: IFSM--50Ap (t=10ms)
Set of 1
3.23$ VAT incl.
(3.23$ excl. VAT)
3.23$
Quantity in stock : 2544
BY228-VIS

BY228-VIS

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor mate...
BY228-VIS
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. Forward current (AV): 3A. IFSM: 50A. Note: 4.2x4.3mm. MRI (max): 140uA. MRI (min): 2uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass ( 4.2x4.3mm ). Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.5V. VRRM: 1500V. Spec info: IFSM--50Ap (tp=10ms)
BY228-VIS
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. Forward current (AV): 3A. IFSM: 50A. Note: 4.2x4.3mm. MRI (max): 140uA. MRI (min): 2uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass ( 4.2x4.3mm ). Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.5V. VRRM: 1500V. Spec info: IFSM--50Ap (tp=10ms)
Set of 1
1.24$ VAT incl.
(1.24$ excl. VAT)
1.24$
Quantity in stock : 131
BY297

BY297

Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semic...
BY297
Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Forward current (AV): 2A. IFSM: 70A. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 7.6x3.6mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 200V. Spec info: Ifms 70Ap
BY297
Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Forward current (AV): 2A. IFSM: 70A. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 7.6x3.6mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 200V. Spec info: Ifms 70Ap
Set of 10
1.18$ VAT incl.
(1.18$ excl. VAT)
1.18$
Quantity in stock : 19866
BY299

BY299

RoHS: yes. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50...
BY299
RoHS: yes. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Forward current (AV): 2A. IFSM: 70A. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 7.6x3.6mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 800V. Spec info: Ifms 70Ap
BY299
RoHS: yes. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Forward current (AV): 2A. IFSM: 70A. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 7.6x3.6mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 800V. Spec info: Ifms 70Ap
Set of 10
0.63$ VAT incl.
(0.63$ excl. VAT)
0.63$
Quantity in stock : 67
BY448

BY448

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor mate...
BY448
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. Forward current (AV): 2A. IFSM: 30A. MRI (max): 140uA. MRI (min): 3uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.6V. Forward voltage Vf (min): 1.6V. VRRM: 1500V. Spec info: IFSM--30Ap, t=10ms
BY448
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. Forward current (AV): 2A. IFSM: 30A. MRI (max): 140uA. MRI (min): 3uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.6V. Forward voltage Vf (min): 1.6V. VRRM: 1500V. Spec info: IFSM--30Ap, t=10ms
Set of 1
0.80$ VAT incl.
(0.80$ excl. VAT)
0.80$
Quantity in stock : 3
BY458

BY458

Semiconductor material: silicon. Forward current (AV): 4A. Note: 1000 ns. Note: 30App/10ms. Number o...
BY458
Semiconductor material: silicon. Forward current (AV): 4A. Note: 1000 ns. Note: 30App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): SOD-57. VRRM: 1200V
BY458
Semiconductor material: silicon. Forward current (AV): 4A. Note: 1000 ns. Note: 30App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): SOD-57. VRRM: 1200V
Set of 1
0.45$ VAT incl.
(0.45$ excl. VAT)
0.45$
Quantity in stock : 2
BY459X-1500

BY459X-1500

Semiconductor material: silicon. Forward current (AV): 12A. Note: Monitor CRT-GI. Note: TO-220, SOD1...
BY459X-1500
Semiconductor material: silicon. Forward current (AV): 12A. Note: Monitor CRT-GI. Note: TO-220, SOD113 (plastic housing). VRRM: 1500V. Note: 48...82kHz
BY459X-1500
Semiconductor material: silicon. Forward current (AV): 12A. Note: Monitor CRT-GI. Note: TO-220, SOD113 (plastic housing). VRRM: 1500V. Note: 48...82kHz
Set of 1
5.45$ VAT incl.
(5.45$ excl. VAT)
5.45$
Quantity in stock : 404
BY500-1000

BY500-1000

Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semic...
BY500-1000
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Forward current (AV): 5A. IFSM: 200A. MRI (max): 10uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Spec info: Ifsm--200App t=10mS
BY500-1000
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Forward current (AV): 5A. IFSM: 200A. MRI (max): 10uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Spec info: Ifsm--200App t=10mS
Set of 1
0.42$ VAT incl.
(0.42$ excl. VAT)
0.42$
Quantity in stock : 418
BY500-200

BY500-200

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor m...
BY500-200
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Forward current (AV): 5A. IFSM: 200A. MRI (max): 10uA. MRI (min): uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). Operating temperature: -50°C...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 400V. Spec info: Ifsm--200Ap, t=10ms
BY500-200
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Forward current (AV): 5A. IFSM: 200A. MRI (max): 10uA. MRI (min): uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). Operating temperature: -50°C...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 400V. Spec info: Ifsm--200Ap, t=10ms
Set of 1
0.22$ VAT incl.
(0.22$ excl. VAT)
0.22$
Quantity in stock : 4279
BY500-800

BY500-800

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Func...
BY500-800
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Forward current (AV): 5A. IFSM: 200A. MRI (max): 10uA. MRI (min): 220A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 800V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm--200App t=10mS
BY500-800
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Forward current (AV): 5A. IFSM: 200A. MRI (max): 10uA. MRI (min): 220A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 800V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm--200App t=10mS
Set of 1
0.27$ VAT incl.
(0.27$ excl. VAT)
0.27$
Quantity in stock : 872
BY550-1000

BY550-1000

Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Silicon Rectifiers. ...
BY550-1000
Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Silicon Rectifiers. Forward current (AV): 5A. IFSM: 300A. MRI (max): 20uA. MRI (min): 20uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--300Ap t=8.3mS
BY550-1000
Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Silicon Rectifiers. Forward current (AV): 5A. IFSM: 300A. MRI (max): 20uA. MRI (min): 20uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--300Ap t=8.3mS
Set of 1
0.28$ VAT incl.
(0.28$ excl. VAT)
0.28$
Quantity in stock : 531
BY550-400

BY550-400

Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 5A. IFSM...
BY550-400
Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 5A. IFSM: 300A. MRI (max): 5uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 400V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--300Ap (t=8.3ms)
BY550-400
Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 5A. IFSM: 300A. MRI (max): 5uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 400V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--300Ap (t=8.3ms)
Set of 1
0.28$ VAT incl.
(0.28$ excl. VAT)
0.28$
Quantity in stock : 229
BY550-600

BY550-600

Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 5A. IFSM...
BY550-600
Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 5A. IFSM: 300A. MRI (max): 20uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--300Ap/8.3mS
BY550-600
Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 5A. IFSM: 300A. MRI (max): 20uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--300Ap/8.3mS
Set of 1
0.26$ VAT incl.
(0.26$ excl. VAT)
0.26$
Quantity in stock : 220
BYD33D

BYD33D

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Func...
BYD33D
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: 'Fast Soft-Rocovery Rectifier Diode'. Forward current (AV): 1.3A. IFSM: 20A. MRI (max): 100uA. MRI (min): 1uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-81. Housing (according to data sheet): SOD-81. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 0.7V. VRRM: 200V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--20Ap (t=10ms)
BYD33D
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: 'Fast Soft-Rocovery Rectifier Diode'. Forward current (AV): 1.3A. IFSM: 20A. MRI (max): 100uA. MRI (min): 1uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-81. Housing (according to data sheet): SOD-81. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 0.7V. VRRM: 200V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--20Ap (t=10ms)
Set of 1
0.31$ VAT incl.
(0.31$ excl. VAT)
0.31$
Quantity in stock : 247
BYD33J

BYD33J

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Func...
BYD33J
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: 'Fast Soft-Rocovery Rectifier Diode'. Forward current (AV): 1.3A. IFSM: 20A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-81. Housing (according to data sheet): SOD-81. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: 20Ap f=10ms
BYD33J
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: 'Fast Soft-Rocovery Rectifier Diode'. Forward current (AV): 1.3A. IFSM: 20A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-81. Housing (according to data sheet): SOD-81. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: 20Ap f=10ms
Set of 10
1.53$ VAT incl.
(1.53$ excl. VAT)
1.53$
Quantity in stock : 35
BYD33M

BYD33M

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Forw...
BYD33M
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Forward current (AV): 1.3A. IFSM: 20A. MRI (max): 100uA. MRI (min): 1uA. Assembly/installation: PCB through-hole mounting. Housing: SOD-81. Housing (according to data sheet): SOD-81. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--20Ap t=10ms
BYD33M
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Forward current (AV): 1.3A. IFSM: 20A. MRI (max): 100uA. MRI (min): 1uA. Assembly/installation: PCB through-hole mounting. Housing: SOD-81. Housing (according to data sheet): SOD-81. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--20Ap t=10ms
Set of 1
0.72$ VAT incl.
(0.72$ excl. VAT)
0.72$
1...345 67...21

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