Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.27$ | 0.27$ |
10 - 24 | 0.26$ | 0.26$ |
25 - 49 | 0.24$ | 0.24$ |
50 - 99 | 0.21$ | 0.21$ |
100 - 249 | 0.20$ | 0.20$ |
250 - 499 | 0.18$ | 0.18$ |
500 - 4279 | 0.17$ | 0.17$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.27$ | 0.27$ |
10 - 24 | 0.26$ | 0.26$ |
25 - 49 | 0.24$ | 0.24$ |
50 - 99 | 0.21$ | 0.21$ |
100 - 249 | 0.20$ | 0.20$ |
250 - 499 | 0.18$ | 0.18$ |
500 - 4279 | 0.17$ | 0.17$ |
BY500-800. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Forward current (AV): 5A. IFSM: 200A. MRI (max): 10uA. MRI (min): 220A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 800V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm--200App t=10mS. Quantity in stock updated on 25/12/2024, 06:25.
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