Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.72$ | 0.72$ |
5 - 9 | 0.69$ | 0.69$ |
10 - 24 | 0.65$ | 0.65$ |
25 - 35 | 0.62$ | 0.62$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.72$ | 0.72$ |
5 - 9 | 0.69$ | 0.69$ |
10 - 24 | 0.65$ | 0.65$ |
25 - 35 | 0.62$ | 0.62$ |
BYD33M. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Forward current (AV): 1.3A. IFSM: 20A. MRI (max): 100uA. MRI (min): 1uA. Assembly/installation: PCB through-hole mounting. Housing: SOD-81. Housing (according to data sheet): SOD-81. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--20Ap t=10ms. Quantity in stock updated on 24/12/2024, 16:25.
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