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Electronic components and equipment, for businesses and individuals

BYD33M

BYD33M
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[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 0.72$ 0.72$
5 - 9 0.69$ 0.69$
10 - 24 0.65$ 0.65$
25 - 35 0.62$ 0.62$
Quantity U.P
1 - 4 0.72$ 0.72$
5 - 9 0.69$ 0.69$
10 - 24 0.65$ 0.65$
25 - 35 0.62$ 0.62$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 35
Set of 1

BYD33M. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Forward current (AV): 1.3A. IFSM: 20A. MRI (max): 100uA. MRI (min): 1uA. Assembly/installation: PCB through-hole mounting. Housing: SOD-81. Housing (according to data sheet): SOD-81. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--20Ap t=10ms. Quantity in stock updated on 24/12/2024, 16:25.

Equivalent products :

Quantity in stock : 191
BYT52M

BYT52M

Semiconductor material: silicon. Function: Fast rectification and switching diode. Forward current (...
BYT52M
Semiconductor material: silicon. Function: Fast rectification and switching diode. Forward current (AV): 1.4A. IFSM: 50A. MRI (max): 150uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. Tr: 200 ns. Threshold voltage Vf (max): 1.3V. VRRM: 1000V. Number of terminals: 2
BYT52M
Semiconductor material: silicon. Function: Fast rectification and switching diode. Forward current (AV): 1.4A. IFSM: 50A. MRI (max): 150uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. Tr: 200 ns. Threshold voltage Vf (max): 1.3V. VRRM: 1000V. Number of terminals: 2
Set of 1
0.96$ VAT incl.
(0.96$ excl. VAT)
0.96$
Quantity in stock : 27
FR157

FR157

Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semic...
FR157
Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: High-speed switching. Forward current (AV): 1.5A. IFSM: 60A. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Spec info: IFSM--60Ap (t=8.3ms)
FR157
Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: High-speed switching. Forward current (AV): 1.5A. IFSM: 60A. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Spec info: IFSM--60Ap (t=8.3ms)
Set of 1
1.49$ VAT incl.
(1.49$ excl. VAT)
1.49$

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1N4007

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VRRM: 1000V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor mate...
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FJP13009

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FJP13009H2

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Cost): 180pF. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max...
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1N4148

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Cj: 4pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semicond...
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1N5908

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Dielectric structure: unidirectional. Semiconductor material: silicon. Breakdown voltage: 5V. Pd (Po...
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1N5408

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Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silico...
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1N5399

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Cj: 20pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV)...
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STF3NK80Z

STF3NK80Z

C(in): 485pF. Cost): 57pF. Channel type: N. Trr Diode (Min.): 384 ns. Type of transistor: MOSFET. Fu...
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TIP122

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Quantity in stock : 2377
FR207

FR207

Cj: 30pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semic...
FR207
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