Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 3.08$ | 3.08$ |
5 - 9 | 2.92$ | 2.92$ |
10 - 24 | 2.77$ | 2.77$ |
25 - 39 | 2.61$ | 2.61$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 3.08$ | 3.08$ |
5 - 9 | 2.92$ | 2.92$ |
10 - 24 | 2.77$ | 2.77$ |
25 - 39 | 2.61$ | 2.61$ |
BYT08P-1000. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 65 ns. Semiconductor material: silicon. Forward current (AV): 8A. IFSM: 100A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.9V. Forward voltage Vf (min): 1.4V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifrm 100Ap tp>10uS (Ifrm 50Ap tp=10ms). Quantity in stock updated on 25/12/2024, 16:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.