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BYD33J

BYD33J
[TITLE]
[TITLE]
Quantity (Set of 10) excl. VAT VAT incl.
1 - 1 1.53$ 1.53$
2 - 2 1.46$ 1.46$
3 - 4 1.38$ 1.38$
5 - 9 1.30$ 1.30$
10 - 24 1.23$ 1.23$
Quantity (Set of 10) U.P
1 - 1 1.53$ 1.53$
2 - 2 1.46$ 1.46$
3 - 4 1.38$ 1.38$
5 - 9 1.30$ 1.30$
10 - 24 1.23$ 1.23$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 247
Set of 10

BYD33J. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: 'Fast Soft-Rocovery Rectifier Diode'. Forward current (AV): 1.3A. IFSM: 20A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-81. Housing (according to data sheet): SOD-81. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: 20Ap f=10ms. Quantity in stock updated on 24/12/2024, 18:25.

Equivalent products :

Quantity in stock : 35
BYD33M

BYD33M

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Forw...
BYD33M
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Forward current (AV): 1.3A. IFSM: 20A. MRI (max): 100uA. MRI (min): 1uA. Assembly/installation: PCB through-hole mounting. Housing: SOD-81. Housing (according to data sheet): SOD-81. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--20Ap t=10ms
BYD33M
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Forward current (AV): 1.3A. IFSM: 20A. MRI (max): 100uA. MRI (min): 1uA. Assembly/installation: PCB through-hole mounting. Housing: SOD-81. Housing (according to data sheet): SOD-81. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--20Ap t=10ms
Set of 1
0.72$ VAT incl.
(0.72$ excl. VAT)
0.72$
Quantity in stock : 191
BYT52M

BYT52M

Semiconductor material: silicon. Function: Fast rectification and switching diode. Forward current (...
BYT52M
Semiconductor material: silicon. Function: Fast rectification and switching diode. Forward current (AV): 1.4A. IFSM: 50A. MRI (max): 150uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. Tr: 200 ns. Threshold voltage Vf (max): 1.3V. VRRM: 1000V. Number of terminals: 2
BYT52M
Semiconductor material: silicon. Function: Fast rectification and switching diode. Forward current (AV): 1.4A. IFSM: 50A. MRI (max): 150uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. Tr: 200 ns. Threshold voltage Vf (max): 1.3V. VRRM: 1000V. Number of terminals: 2
Set of 1
0.96$ VAT incl.
(0.96$ excl. VAT)
0.96$

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RFT-1-25A

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