Standard and Rectifier Diodes

Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 30 ns. Semiconductor material: silicon. Function: 'Fast soft-recovery'. Forward current (AV): 1A. IFSM: 30A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2.5V. Forward voltage Vf (min): 1.3V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--30Ap, t=10ms

Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: 'Fast soft-recovery'. Forward current (AV): 1A. IFSM: 30A. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2.5V. Forward voltage Vf (min): 1.3V. VRRM: 800V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--30Ap, t=10ms

Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: 'Fast soft-recovery'. Forward current (AV): 1A. IFSM: 30A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 2.5V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--30Ap, t=10ms

ROHS: Yes. Housing: SOD57. Diode type: rectifier diode. Assembly/installation: THT. Max reverse voltage: 200V. Threshold voltage: 1.07V. Driving current: 2A. Reaction time: 25ns. Packaging: Ammo Pack. Semiconductor type: diode. Properties of semiconductor: 'glass passivated'. Semiconductor structure: diode. Pulse current max.: 50A. Conduction voltage (threshold voltage): 1.07V. Conditioning: Ammo Pack

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: Ultra Fast Avalanche Sinterglass Diode. Forward current (AV): 2A. IFSM: 50A. MRI (max): 150uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass ( 4.5x3.6mm ). Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.07V. Forward voltage Vf (min): 0.88V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--50App, t=10mS

Cj: 190pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 30 ns. Semiconductor material: silicon. Function: 'Avalanche Sinterglass Diode Fast'. Production date: 201412. Forward current (AV): 3.5A. IFSM: 90A. MRI (max): 100uA. MRI (min): 1uA. Marking on the case: BYV28-200. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.89V. VRRM: 200V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 2500. Spec info: Ifsm--90A, t=10mS

Cj: 125pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultra fast low-loss controlled avalanche rect.. Forward current (AV): 3.1A. IFSM: 90A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.93V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm--90A, t=10mS

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High-speed switching. Forward current (AV): 9A. IFSM: 100A. MRI (max): 50uA. MRI (min): 2uA. Temperature: +150°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC ( SOD59 ). Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 0.9V. VRRM: 500V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 110Ap t=8.3ms

Conditioning: plastic tube. Conditioning unit: 50. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ULTRA FAST. Forward current (AV): 10A. IFSM: 125A. Marking on the case: BYV32E-200. Equivalents: BYV32-200G, BYV32E-200.127, BYV32-200-E3/45. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): SOT78 (TO-220AB). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.72V. VRRM: 200V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm 125A t=10ms

Conditioning: plastic tube. Conditioning unit: 50. Dielectric structure: common cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High-speed switching. Forward current (AV): 10A. IFSM: 60.4k Ohms. Marking on the case: BYV34-500. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB, SOT78. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.87V. VRRM: 500V. Quantity per case: 2. Number of terminals: 3. Spec info: Ifsm 120A t=10ms, 132A t=8.3ms

Cj: 15pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Function: Fast Silicon Mesa Rectifiers. Production date: 2013/40. Forward current (AV): 2A. IFSM: 50A. MRI (max): 150uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass passivated. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Spec info: IFMS 50Ap (t=10ms)

Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Forward current (AV): 15A. IFSM: 75A. MRI (max): 1mA. MRI (min): 0.5mA. Temperature: +150°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.78V. VRRM: 150V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Function: Rectifier diodes, Ultrafast, rugged. Spec info: Ifsm--75Ap t=10ms / diode

Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Forward current (AV): 15A. IFSM: 75A. MRI (max): 1mA. MRI (min): 0.5mA. Temperature: +150°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.78V. VRRM: 200V. Quantity per case: 2. Number of terminals: 3. Function: Rectifier diodes, Ultrafast, rugged. Spec info: Ifsm--75Ap t=10ms / diode

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ultra fast rectifier diode. Forward current (AV): 12.7A. IFSM: 150A. MRI (max): 50uA. MRI (min): 5uA. Temperature: +150°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220-2. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.83V. VRRM: 200V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 150Ap t=10ms

Semiconductor material: silicon. Forward current (AV): 3A. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 200V. Number of terminals: 2. Note: GI S. Note: 100App/10ms

Semiconductor material: silicon. Forward current (AV): 3A. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 800V. Number of terminals: 2. Note: GI S. Note: 80App/10ms

Cj: 45pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: SWITCHMODE Power Rectifiers. Forward current (AV): 8A. MRI (max): 600uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 0.85V. VRRM: 200V. Number of terminals: 2. Spec info: Ifsm 100A (t=8.3ms)

Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Forward current (AV): 8A. IFSM: 88A. Temperature: +150°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 0.8V. VRRM: 200V. Number of terminals: 2. Quantity per case: 1. Function: ultra-fast rectifier diodes (max 25ns). Note: Viso 2500V, Cisol 10pF. Conditioning unit: 50. Spec info: Ifsm--88A t=8.3mS

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: Fast Avalanche Sinterglass Diode. Forward current (AV): 2A. IFSM: 50A. MRI (max): 46.4k Ohms. MRI (min): 1uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.95V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Note: Fast rectification and switching diode. Spec info: IFSM--50Ap (tp=10ms)

Cj: 50pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: Mesa Rectifiers. Forward current (AV): 2A. IFSM: 50A. MRI (max): 5uA. MRI (min): 0.1uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.9V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--50Ap (t=10ms)

Semiconductor material: silicon. Forward current (AV): 3A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 200V. Number of terminals: 2. Note: GI S. Note: 100App/10ms

Semiconductor material: silicon. Forward current (AV): 8A. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220B. VRRM: 200V. Note: SWITCHMODE Power Rectifiers. Note: Ifsm 100A/10ms

Cj: 85pF. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: 'Fast soft-recovery controlled avalanche rectifiers'. Forward current (AV): 3A. IFSM: 70A. MRI (max): 150uA. MRI (min): 1uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.25V. VRRM: 600V. Number of terminals: 2. Spec info: IFSM--70App / 10mS

Cj: 75pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Forward current (AV): 3A. IFSM: 70A. MRI (max): 150uA. MRI (min): 1uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.25V. VRRM: 800V. Number of terminals: 2. Quantity per case: 1. Function: Fast soft-recovery controlled avalanche rectifier. Spec info: IFSM--70Ap

Semiconductor material: silicon. Forward current (AV): 0.36A. VRRM: 1600V. Note: GI. Note: BYX10GP