Standard and Rectifier Diodes

Forward current (AV): 15A. IFSM: 75A. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). VRRM: 200V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: Rectifier diodes, Ultrafast, rugged. MRI (max): 1mA. MRI (min): 0.5mA. Number of terminals: 3. Temperature: +150°C. RoHS: yes. Spec info: Ifsm--75Ap t=10ms / diode. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.78V

Forward current (AV): 12.7A. IFSM: 150A. Housing: TO-220. Housing (according to data sheet): TO-220-2. VRRM: 200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ultra fast rectifier diode. MRI (max): 50uA. MRI (min): 5uA. Number of terminals: 2. Temperature: +150°C. RoHS: yes. Spec info: Ifsm 150Ap t=10ms. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.83V

Forward current (AV): 3A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 200V. Semiconductor material: silicon. Note: GI S. Note: 100App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 3A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 800V. Semiconductor material: silicon. Note: GI S. Note: 80App/10ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 8A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 200V. Cj: 45pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: SWITCHMODE Power Rectifiers. MRI (max): 600uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100A (t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 0.85V

Forward current (AV): 8A. IFSM: 88A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 200V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ultra-fast rectifier diodes (max 25ns). Note: Viso 2500V, Cisol 10pF. Number of terminals: 2. Temperature: +150°C. RoHS: yes. Spec info: Ifsm--88A t=8.3mS. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 0.8V

Forward current (AV): 2A. IFSM: 50A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: Fast Avalanche Sinterglass Diode. Note: Fast rectification and switching diode. MRI (max): 46.4k Ohms. MRI (min): 1uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap (tp=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.95V

Forward current (AV): 2A. IFSM: 50A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 1000V. Cj: 50pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: Mesa Rectifiers. MRI (max): 5uA. MRI (min): 0.1uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.9V

Forward current (AV): 3A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 200V. Semiconductor material: silicon. Note: GI S. Note: 100App/10ms. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting

Forward current (AV): 8A. Housing: TO-220. Housing (according to data sheet): TO-220B. VRRM: 200V. Semiconductor material: silicon. Note: SWITCHMODE Power Rectifiers. Note: Ifsm 100A/10ms. Assembly/installation: PCB through-hole mounting

Forward current (AV): 3A. IFSM: 70A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 600V. Cj: 85pF. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: 'Fast soft-recovery controlled avalanche rectifiers'. MRI (max): 150uA. MRI (min): 1uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--70App / 10mS. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.25V

Forward current (AV): 3A. IFSM: 70A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 800V. Cj: 75pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Function: Fast soft-recovery controlled avalanche rectifier. MRI (max): 150uA. MRI (min): 1uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--70Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.25V

Forward current (AV): 0.36A. VRRM: 1600V. Semiconductor material: silicon. Note: GI. Note: BYX10GP

Forward current (AV): 1.2A. VRRM: 350V. Semiconductor material: silicon. Note: GI-S

Forward current (AV): 10A. VRRM: 1200V. Semiconductor material: silicon. Note: 11mm, 6-sided. Note: GI-L. Note: M5 thread

Forward current (AV): 1A. VRRM: 300V. Semiconductor material: silicon. Note: GI

Forward current (AV): 20mA. Housing: DO-214. Housing (according to data sheet): SMB ( 4.6x3.7x2.1mm ). VRRM: 45V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: LED driver circuit 20mA/45V. Note: constant current LED driver. Number of terminals: 2. RoHS: yes. Spec info: for a dissipation of 1W without cooling, max 25V. Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+150°C. Operating temperature range max (°C): +150°C

Forward current (AV): 40mA. Housing: DO-214. Housing (according to data sheet): SMB ( 4.6x3.7x2.1mm ). VRRM: 45V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: LED driver circuit 40mA/45V. Note: constant current LED driver. Number of terminals: 2. RoHS: yes. Spec info: for a dissipation of 1W without cooling, max 25V. Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+150°C. Operating temperature range max (°C): +150°C

Forward current (AV): 15A. IFSM: 150A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. VRRM: 40V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 100 ns. Semiconductor material: Sb. Function: Schottky diode. Number of terminals: 3. Spec info: Ifsm 150A (50Hz), Vf max 0.55V. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.55V

Forward current (AV): 30A. IFSM: 300A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. VRRM: 40V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 100 ns. Semiconductor material: Sb. Function: Schottky diode. Number of terminals: 3. Spec info: Ifsm--300A (50Hz), Vf max--0.55V. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.55V

Note: Uf 0.98V. Note: Ultra Fast Recovery Diode. Note: Ifsm--65App

Forward current (AV): 5A. Housing: TO-220. Housing (according to data sheet): TO-220. VRRM: 200V. Quantity per case: 2. Dielectric structure: common cathode. Double: Double. Semiconductor material: silicon. Function: ULTRA FAST DUAL DIODE. Note: ULTRA FAST. Note: Ifsm--50A10mS. Number of terminals: 3. Spec info: IFSM--50A t=10mS. Assembly/installation: PCB through-hole mounting

Forward current (AV): 20A. IFSM: 275A. Housing: DO-4. Housing (according to data sheet): DO-4P. VRRM: 600V. Dielectric structure: casing connected to the cathode. Used for: can also be used for solar panel systems. Function: power diode. Bushing Thread: M5. Spec info: 275App/10ms. Weight: 6g. Assembly/installation: screw. Operating temperature: -25...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.1V

Forward current (AV): 20A. IFSM: 275A. Housing: DO-4. Housing (according to data sheet): DO-4P. VRRM: 600V. Dielectric structure: casing connected to the anode. Function: power diode. Bushing Thread: M5. Spec info: 275App/10ms. Weight: 6g. Assembly/installation: screw. Operating temperature: -25...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.1V

Forward current (AV): 40A. IFSM: 600A. Housing: DO-5. Housing (according to data sheet): DO-5P. VRRM: 800V. Dielectric structure: casing connected to the cathode. Used for: can also be used for solar panel systems. Function: power diode. Bushing Thread: M6. Spec info: 600App/10ms. Assembly/installation: screw. Operating temperature: -25...+150°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1V