Standard and Rectifier Diodes

Forward current (AV): 0.2A. IFSM: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 40V. Cj: 5pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Schottky diode. Surface mount. Marking on the case: 43. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.38V. Number of terminals: 3. Quantity per case: 1. Spec info: IFSM--600mA t=1s

Forward current (AV): 120mA. IFSM: 0.6A. Housing: SOD-523. Housing (according to data sheet): SOD-523. VRRM: 40V. Cj: 4pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Schottky diode. Surface mount. Marking on the case: .W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.38V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--600mA t=1s

Forward current (AV): 0.2A. IFSM: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 40V. Cj: 5pF. Dielectric structure: common cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Schottky diode. Surface mount. Marking on the case: 45. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.38V. Quantity per case: 2. Number of terminals: 3. Spec info: IFSM--600mA t=1s

Forward current (AV): 0.2A. IFSM: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 40V. Cj: 5pF. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Schottky diode. Surface mount. Marking on the case: 46. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.38V. Quantity per case: 2. Number of terminals: 3. Dielectric structure: common anode. Spec info: IFSM--600mA t=1s

Forward current (AV): 0.2A. IFSM: 0.6A. Housing: SOT-143. Housing (according to data sheet): SOT-143B. VRRM: 40V. Cj: 5pF. Dielectric structure: independent. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Schottky diode. Surface mount. Marking on the case: 47 s. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.38V. Quantity per case: 2. Number of terminals: 4. Spec info: IFSM--600mA t=1s

Forward current (AV): 250mA. IFSM: 1A. Housing: DO-34 ( SOD68 ). Housing (according to data sheet): DO-34 ( 3.4x1.6mm ). VRRM: 125V. Cj: 4pF. Conditioning: roll. Conditioning unit: 5000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1.5us. Semiconductor material: silicon. Function: Low-leakage diode. Note: low reverse current. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.78V. Spec info: IFSM--1A t=1mS, 4A t=1uS

Housing: SOT23. Diode type: Schottky rectifier diode. Assembly/installation: SMD. Max reverse voltage: 70V. Threshold voltage: 750mV. Driving current: 70mA. Reaction time: 5ns. Capacity: 2pF. Semiconductor type: diode. Properties of semiconductor: super fast switching. Semiconductor structure: 2 diodes connected in series. Pulse current max.: 0.6A. Power: 310mW

Forward current (AV): 0.2A. IFSM: 4A. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80C. VRRM: 30 v. Cj: 10pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Glass Fast Switching Schottky Barrier Diodes. MRI (max): 2uA. Pd (Power Dissipation, Max): 200mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.8V. Forward voltage Vf (min): 0.24V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--4A t=10ms

RoHS: yes. Component family: Schottky diode for small signals, SMD mounting. Housing: PCB soldering (SMD). Housing: SOD80. Housing (JEDEC standard): Sb. Configuration: surface-mounted component (SMD). Number of terminals: 2. Forward current [A]: 0.2A. Ifsm [A]: 0.6A. Close voltage (repetitive) Vrrm [V]: 30 v. Leakage current on closing Ir [A]: 0.2uA..2uA. Switching speed (regeneration time) tr [sec.]: 5 ns. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80C. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.8V. Forward voltage Vf (min): 0.24V. VRRM: 30 v. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Forward voltage Vfmax (V): 0.4V @ 10mA

Forward current (AV): 130mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 4 v. Dielectric structure: Common anode-cathode (midpoint). Semiconductor material: Sb. Function: Mixer applications in VHF/UHF range. MRI (max): 1.25uA. MRI (min): 0.25uA. Marking on the case: 54s. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.6V. Forward voltage Vf (min): 0.2V. Quantity per case: 2. Number of terminals: 3. Note: screen printing/SMD code 54s. Spec info: RF 8 Ohms, max 15 Ohms / CT 0.55pF

Forward current (AV): 30mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. VRRM: 4 v. Dielectric structure: common cathode. Double: Double. Semiconductor material: Sb. Function: Mixer applications in VHF/UHF range. MRI (max): 1.25uA. MRI (min): 0.25uA. Marking on the case: 55s. RoHS: yes. Schottky diode?: schottky. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 0.6V. Forward voltage Vf (min): 0.2V. Quantity per case: 2. Number of terminals: 3. Note: screen printing/SMD code 55s. Spec info: RF 8 Ohms, max 15 Ohms / CT 0.55pF

Forward current (AV): 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. VRRM: 35V. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: VHF/UHF Band Switching diode. Marking on the case: A2. RoHS: yes. Schottky diode?: schottky. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1.2V. Number of terminals: 3. Quantity per case: 1. Spec info: 0.8...1pF (f=1MHz), rD--0.5...0.7 Ohm

Forward current (AV): 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. VRRM: 35V. Dielectric structure: Common anode-cathode (midpoint). Semiconductor material: Sb. Function: VHF/UHF Band Switching diode 10MHz. Marking on the case: AUs. RoHS: yes. Schottky diode?: schottky. Assembly/installation: surface-mounted component (SMD). Tf (type): 120ns. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 0.75V. Quantity per case: 2. Number of terminals: 3. Spec info: 0.75...1pF (f=1MHz), rf--0.4...0.7 Ohm

Forward current (AV): 0.2A. IFSM: 4A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 30 v. Cj: 7pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. MRI (max): 100uA. MRI (min): 0.5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.65V. Forward voltage Vf (min): 0.4V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--4Ap (t=/10ms)

Forward current (AV): 150mA. IFSM: 750mA. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 100V. RoHS: yes. Cj: 6pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): DO-35. Semiconductor material: Sb. Function: Switching Schottky diode. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.25V. Spec info: IFSM 0.75Ap t=10ms

Forward current (AV): 350mA. IFSM: 7.5A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 40V. RoHS: yes. Cj: 20pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 10 ns. Semiconductor material: Sb. Function: Schottky diode. MRI (max): 50uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.9V. Forward voltage Vf (min): 0.5V. Spec info: IFSM--7.5Ap t=10ms

Forward current (AV): 200mA. IFSM: 600mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 30 v. Cj: 10pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Schottky diode. MRI (max): 2uA. Marking on the case: L4. Number of terminals: 3. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 800mV. Forward voltage Vf (min): 240mV. Spec info: IFSM--600mAp (t=10ms)

Forward current (AV): 200mA. IFSM: 600mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 30 v. Cj: 10pF. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Dual Schottky diode. MRI (max): 2uA. Marking on the case: L43 or W1. Number of terminals: 3. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 800mV. Forward voltage Vf (min): 240mV. Spec info: IFSM--600mAp (t=10ms)

Housing: PCB soldering (SMD). Housing: SOD-323. Forward current [A]: 0.3A. RoHS: yes. Component family: Silicon Schottky diode. Configuration: surface-mounted component (SMD). Number of terminals: 2. Ifsm [A]: 1A. Close voltage (repetitive) Vrrm [V]: 40V. Leakage current on closing Ir [A]: 1uA..100uA. Switching speed (regeneration time) tr [sec.]: 5 ns. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C. Forward voltage Vfmax (V): 0.4V @ 10mA

Forward current (AV): 200mA. IFSM: 600mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 30 v. RoHS: yes. Cj: 10pF. Quantity per case: 2. Dielectric structure: Common anode-cathode (midpoint). Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Dual Schottky diode. MRI (max): 2uA. MRI (min): 0.4V @ 10mA. Marking on the case: L44 or V4. Number of terminals: 3. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 800mV. Forward voltage Vf (min): 240mV. Spec info: IFSM--600mAp (t=10ms)

Forward current (AV): 20mA. Housing: SOD-323. Housing (according to data sheet): SOD-323. VRRM: 40V. Semiconductor material: Sb. Note: IFSM 0.75App/10ms. Number of terminals: 2. Schottky diode?: schottky. Assembly/installation: surface-mounted component (SMD)

Forward current (AV): 30mA. IFSM: 0.5A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 60V. Cj: 1.6pF. Conditioning: roll. Conditioning unit: 10000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Switching Schottky diode. MRI (max): 200nA. Marking on the case: BAT83S. Number of terminals: 2. Temperature: +125°C. RoHS: yes. Pitch: 1.6x3.9mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 330mV. Spec info: IFMS 0.5Ap/10ms

RoHS: yes. Component family: Small-signal Schottky diode. Housing: PCB soldering. Housing: DO-34. Configuration: PCB through-hole mounting. Number of terminals: 2. Forward current [A]: 0.2A. Ifsm [A]: 5A. Close voltage (repetitive) Vrrm [V]: 30 v. Leakage current on closing Ir [A]: 2uA. Switching speed (regeneration time) tr [sec.]: 4 ns. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Forward voltage Vfmax (V): 0.4V @ 10mA

Forward current (AV): 0.2A. IFSM: 5A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 30 v. RoHS: yes. Cj: 10pF. Conditioning: roll. Conditioning unit: 10000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Switching Schottky diode. MRI (max): 2uA. MRI (min): 2uA. Marking on the case: BAT85S. Number of terminals: 2. Temperature: +125°C. Pitch: 1.6x3.9mm. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 800mV. Forward voltage Vf (min): 240mV. Spec info: IFMS 5Ap/10ms

Forward current (AV): 0.2A. IFSM: 5A. Housing: DO-34 ( SOD68 ). Housing (according to data sheet): DO-34 ( 1.6x3.04 ). VRRM: 50V. Cj: 8pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: Sb. Function: Schottky diode. Note: Switching Schottky diode. MRI (max): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+125°C. Threshold voltage Vf (max): 900mV. Forward voltage Vf (min): 300mV. Spec info: IFSM--5Ap t=10ms