Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.26$ | 0.26$ |
10 - 24 | 0.25$ | 0.25$ |
25 - 49 | 0.23$ | 0.23$ |
50 - 99 | 0.22$ | 0.22$ |
100 - 229 | 0.21$ | 0.21$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.26$ | 0.26$ |
10 - 24 | 0.25$ | 0.25$ |
25 - 49 | 0.23$ | 0.23$ |
50 - 99 | 0.22$ | 0.22$ |
100 - 229 | 0.21$ | 0.21$ |
BY550-600. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 5A. IFSM: 300A. MRI (max): 20uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--300Ap/8.3mS. Quantity in stock updated on 24/12/2024, 17:25.
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