N-channel FETs and MOSFETs

N-channel transistor, TO-3PN ( 2-16C1B ), TO-3P, 600V. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 600V. C(in): 4650pF. CE diode: yes. Channel type: N. Function: High Power Switching Applications. Germanium diode: no. Collector current: 30A. Ic(pulse): 60A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 170W. RoHS: yes. Spec info: insulated gate bipolar transistor (IGBT). Assembly/installation: PCB through-hole mounting. Td(off): 0.3 ns. Td(on): 0.09 ns. Saturation voltage VCE(sat): 2V. Maximum saturation voltage VCE(sat): 2.45V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 6.5V

N-channel transistor, 18A, TO-3P( N )IS, TO-3P, 600V. Ic(T=100°C): 18A. Housing: TO-3P( N )IS. Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 600V. CE diode: yes. Channel type: N. Function: High Power Switching Applications. Germanium diode: no. Collector current: 37A. Ic(pulse): 100A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: insulated gate bipolar transistor (IGBT). Assembly/installation: PCB through-hole mounting. Td(off): 0.51 ns. Td(on): 0.33 ns. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.3V. Gate/emitter voltage VGE: 25V

N-channel transistor, 17A, TO-247, TO-247, 1200V. Ic(T=100°C): 17A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 1200V. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Germanium diode: no. Collector current: 35A. Ic(pulse): 80A. Marking on the case: 10N120BND. Number of terminals: 3. Pd (Power Dissipation, Max): 298W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 165 ns. Td(on): 23 ns. Technology: NPT series IGBT transistor with anti-parallel hyperfast diode. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.45V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 6V. Gate/emitter voltage VGE(th)max.: 6.8V

N-channel transistor, TO-247, 23A, TO-247 ( AC ), 600V. Housing: TO-247. Ic(T=100°C): 23A. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. RoHS: yes. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: SMPS, IGBT with Anti-Parallel Hyperfast Diode. Germanium diode: no. Production date: 2014/17. Collector current: 54A. Ic(pulse): 96A. Marking on the case: 12N60A4D. Number of terminals: 3. Pd (Power Dissipation, Max): 167W. Spec info: >100kHz, 390V, 12A. Assembly/installation: PCB through-hole mounting. Td(off): 96 ns. Td(on): 17 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.6V. Gate/emitter voltage VGE(th)max.: 5.6V

N-channel transistor, 12A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 12A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. CE diode: yes. Channel type: N. Function: UFS Series IGBT with Anti-Parallel Hyperfast Diode. Germanium diode: no. Collector current: 24A. Ic(pulse): 96A. Marking on the case: G12N60C3D. Number of terminals: 3. Pd (Power Dissipation, Max): 104W. RoHS: no. Assembly/installation: PCB through-hole mounting. Td(off): 270 ns. Td(on): 14 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.65V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V

N-channel transistor, 20A, TO-247, TO-247AC, 600V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 600V. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 45 ns. Function: UFS Series IGBT with Anti-Parallel Hyperfast Diode. Germanium diode: no. Collector current: 40A. Ic(pulse): 160A. Marking on the case: G20N60B3D. Number of terminals: 3. Pd (Power Dissipation, Max): 165W. RoHS: yes. Spec info: Typical Fall Time 140ns at 150°C. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 25 ns. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.8V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V

N-channel transistor, 60A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: SMPS Series IGBT. Germanium diode: no. Collector current: 75A. Ic(pulse): 240A. Marking on the case: G30N60A4. Number of terminals: 3. Pd (Power Dissipation, Max): 463W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Maximum saturation voltage VCE(sat): 2.6V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 7V

N-channel transistor, TO-247, 60A, TO-247 ( AC ), 600V. Housing: TO-247. Ic(T=100°C): 60A. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. RoHS: yes. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 30 ns. Function: SMPS Series IGBT with Anti-Parallel Hyperfast Diod. Germanium diode: no. Collector current: 75A. Ic(pulse): 240A. Marking on the case: 30N60A4D. Number of terminals: 3. Pd (Power Dissipation, Max): 463W. Spec info: 463W. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 7V

N-channel transistor, 63A, TO-247, TO-247AC, 600V. Ic(T=100°C): 63A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 600V. CE diode: no. Channel type: N. Germanium diode: no. Collector current: 75A. Ic(pulse): 300A. Marking on the case: 40N60A4. Number of terminals: 3. Pd (Power Dissipation, Max): 625W. RoHS: yes. Spec info: 100kHz Operation At 390V 40A. Assembly/installation: PCB through-hole mounting. Td(off): 145 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.7V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 7V

N-channel transistor, 10A, TO-247, TO-247, 1200V. Ic(T=100°C): 10A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 1200V. CE diode: yes. Channel type: N. Germanium diode: no. Collector current: 25A. Ic(pulse): 40A. Marking on the case: 5N120BND. Number of terminals: 3. Pd (Power Dissipation, Max): 167W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 182 ns. Td(on): 20 ns. Technology: NPT series IGBT transistor with anti-parallel hyperfast diode. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.45V. Maximum saturation voltage VCE(sat): 3.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 6V. Gate/emitter voltage VGE(th)max.: 6.8V

N-channel transistor, 13A, 250uA, 0.09 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 55V. ID (T=25°C): 13A. Idss (max): 250uA. On-resistance Rds On: 0.09 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 55V. C(in): 250pF. Cost): 100pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 45 ns. Type of transistor: MOSFET. G-S Protection: no. IDss (min): 1uA. Marking on the case: 75307D. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 7 ns. Technology: UltraFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 13A, 250uA, 0.09 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-252AA ), 55V. ID (T=25°C): 13A. Idss (max): 250uA. On-resistance Rds On: 0.09 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-252AA ). Voltage Vds(max): 55V. C(in): 250pF. Cost): 100pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 45 ns. Type of transistor: MOSFET. G-S Protection: no. IDss (min): 1uA. Marking on the case: 75307D. Number of terminals: 2. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 35 ns. Td(on): 7 ns. Technology: UltraFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 75A, 250uA, 6.5m Ohms, TO-247, TO-247, 55V. ID (T=25°C): 75A. Idss (max): 250uA. On-resistance Rds On: 6.5m Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 55V. C(in): 3200pF. Cost): 1170pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 105 ns. Type of transistor: MOSFET. Function: Switching Regulator. G-S Protection: no. IDss (min): 1uA. Marking on the case: 75344 G. Number of terminals: 3. Pd (Power Dissipation, Max): 285W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 46 ns. Td(on): 13 ns. Technology: UltraFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 75A, 250uA, 0.065 Ohms, TO-220, TO-220AB, 55V. ID (T=25°C): 75A. Idss (max): 250uA. On-resistance Rds On: 0.065 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 3200pF. Cost): 1170pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 105 ns. Type of transistor: MOSFET. G-S Protection: no. IDss (min): 1uA. Marking on the case: 75344 P. Number of terminals: 3. Pd (Power Dissipation, Max): 285W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 46 ns. Td(on): 13 ns. Technology: UltraFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 65A, 75A, 250uA, 0.0115 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 65A. ID (T=25°C): 75A. Idss (max): 250uA. On-resistance Rds On: 0.0115 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 3790pF. Cost): 810pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 145 ns. Type of transistor: MOSFET. Function: UltraFET Power MOSFET. G-S Protection: no. Id(imp): 430A. IDss (min): 1uA. Marking on the case: 75645 P. Number of terminals: 2. Pd (Power Dissipation, Max): 310W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 41 ns. Td(on): 14 ns. Technology: UltraFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 65A, 75A, 250uA, 0.0115 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-252AB ), 100V. ID (T=100°C): 65A. ID (T=25°C): 75A. Idss (max): 250uA. On-resistance Rds On: 0.0115 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-252AB ). Voltage Vds(max): 100V. C(in): 3790pF. Cost): 810pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 145 ns. Type of transistor: MOSFET. Function: UltraFET Power MOSFET. G-S Protection: no. Id(imp): 430A. IDss (min): 1uA. Marking on the case: 75645 S. Number of terminals: 2. Pd (Power Dissipation, Max): 310W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 41 ns. Td(on): 14 ns. Technology: UltraFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 20A, 20A, 250uA, 0.017 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-252AA ), 30 v. ID (T=100°C): 20A. ID (T=25°C): 20A. Idss (max): 250uA. On-resistance Rds On: 0.017 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-252AA ). Voltage Vds(max): 30 v. C(in): 850pF. Cost): 465pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 58 ns. Type of transistor: MOSFET. Function: Gate control by logic level. G-S Protection: no. IDss (min): 1uA. Marking on the case: 76121D. Number of terminals: 2. Pd (Power Dissipation, Max): 75W. Assembly/installation: surface-mounted component (SMD). Td(off): 45 ns. Td(on): 6 ns. Technology: UltraFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 16V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

N-channel transistor, PCB soldering, TO-220AB, 30 v, 75A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 75A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: HUF76145P3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.035 Ohms @ 75A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 110 ns. Switch-off delay tf[nsec.]: 135 ns. Ciss Gate Capacitance [pF]: 4900pF. Maximum dissipation Ptot [W]: 270W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

N-channel transistor, Other, PG-MDIP-24-1 ( 36x23mm ), 600V. Housing: Other. Housing (according to data sheet): PG-MDIP-24-1 ( 36x23mm ). Collector/emitter voltage Vceo: 600V. CE diode: yes. Channel type: N. Function: 6 x IGBT For Power Management. Germanium diode: no. Collector current: 15A. Note: three phase AC motor driver. Frequency: 20kHz. Number of terminals: 24. Pd (Power Dissipation, Max): 29W. RoHS: yes. Spec info: IC=20A TC=25°C, IC=15A TC=80°C. Assembly/installation: PCB through-hole mounting. Td(off): 750 ns. Td(on): 600 ns. Technology: Control Integrated POwer System (CIPOS™). Operating temperature: -40...+100°C. Saturation voltage VCE(sat): 1.6V. Maximum saturation voltage VCE(sat): 2V

N-channel transistor, Other, PG-MDIP-24-1 ( 36x23mm ), 600V. Housing: Other. Housing (according to data sheet): PG-MDIP-24-1 ( 36x23mm ). Collector/emitter voltage Vceo: 600V. CE diode: yes. Channel type: N. Function: 6 x IGBT For Power Management. Germanium diode: no. Collector current: 20A. Note: three phase AC motor driver. Frequency: 20kHz. Number of terminals: 24. Pd (Power Dissipation, Max): 29W. RoHS: yes. Spec info: IC=20A TC=25°C, IC=15A TC=80°C. Assembly/installation: PCB through-hole mounting. Td(off): 650 ns. Td(on): 970 ns. Technology: Control Integrated POwer System (CIPOS™). Operating temperature: -40...+100°C. Saturation voltage VCE(sat): 1.6V. Maximum saturation voltage VCE(sat): 2V

N-channel transistor, 75A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 75A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 4620pF. Cost): 240pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: Very low VCEsat. Germanium diode: no. Collector current: 140A. Ic(pulse): 225A. Marking on the case: G75H603. Number of terminals: 3. Pd (Power Dissipation, Max): 428W. RoHS: yes. Spec info: 'Trench and Fieldstop' technology IGBT transistor. Delivery time: KB. Assembly/installation: PCB through-hole mounting. Td(off): 265 ns. Td(on): 31 ns. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.85V. Maximum saturation voltage VCE(sat): 2.25V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V

N-channel transistor, 15A, TO-247, TO-247AC, 1200V. Ic(T=100°C): 15A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 1200V. C(in): 1165pF. Cost): 40pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: Inductive Cooking. Germanium diode: no. Collector current: 30A. Ic(pulse): 45A. Marking on the case: H15R1203. Number of terminals: 3. Pd (Power Dissipation, Max): 254W. RoHS: yes. Spec info: Reverse conducting IGBT with monolithic body diode. Assembly/installation: PCB through-hole mounting. Td(off): 300 ns. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.48V. Maximum saturation voltage VCE(sat): 1.75V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V

N-channel transistor, 20A, TO-247, PG-TO247-3, 1200V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): PG-TO247-3. Collector/emitter voltage Vceo: 1200V. C(in): 1340pF. Cost): 43pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 90 ns. Function: Powerful monolithic body diode with low forward voltage. Germanium diode: no. Collector current: 40A. Ic(pulse): 60A. Marking on the case: H20MR5. Number of terminals: 3. Pd (Power Dissipation, Max): 288W. RoHS: yes. Spec info: Ic 40A @ 25°C, 20A @ 110°C, Icm 60A (pulsed). Assembly/installation: PCB through-hole mounting. Td(off): 350 ns. Td(on): 260 ns. Technology: TRENCHSTOP TM technology. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.55V. Maximum saturation voltage VCE(sat): 1.75V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V

N-channel transistor, 20A, TO-247, TO-247-3, 1350V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): TO-247-3. Collector/emitter voltage Vceo: 1350V. C(in): 1500pF. Cost): 55pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: Inductive?cooking. Germanium diode: no. Collector current: 40A. Ic(pulse): 60A. Marking on the case: H20R1353. Number of terminals: 3. Pd (Power Dissipation, Max): 310W. RoHS: yes. Spec info: Reverse conducting IGBT with monolithic body diode. Assembly/installation: PCB through-hole mounting. Td(off): 405 ns. Td(on): 335 ns. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.6V. Maximum saturation voltage VCE(sat): 1.8V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V

N-channel transistor, 20A, TO-247, PG-TO247-3, 1350V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): PG-TO247-3. Collector/emitter voltage Vceo: 1350V. C(in): 1360pF. Cost): 43pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 50 ns. Function: Reverse conducting IGBT with monolithic body diode. Germanium diode: no. Collector current: 40A. Ic(pulse): 60A. Marking on the case: H20PR5. Number of terminals: 3. Pd (Power Dissipation, Max): 288W. RoHS: yes. Spec info: Ic 40A @ 25°C, 20A @ 110°C, Icm 60A (pulsed). Assembly/installation: PCB through-hole mounting. Td(off): 235 ns. Technology: TRENCHSTOP TM technology. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.65V. Maximum saturation voltage VCE(sat): 1.85V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V