N-channel transistor, 75A, TO-247, TO-247 ( AC ), 600V - IGW75N60H3

Quantity	excl. VAT	VAT incl.
1 - 1	14.58$	14.58$
2 - 2	13.85$	13.85$
3 - 4	13.56$	13.56$
5 - 9	13.12$	13.12$
10 - 14	12.83$	12.83$
15 - 19	12.39$	12.39$
20 - 26	11.96$	11.96$

Quantity	U.P
1 - 1	14.58$	14.58$
2 - 2	13.85$	13.85$
3 - 4	13.56$	13.56$
5 - 9	13.12$	13.12$
10 - 14	12.83$	12.83$
15 - 19	12.39$	12.39$
20 - 26	11.96$	11.96$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 26

Set of 1

N-channel transistor, 75A, TO-247, TO-247 ( AC ), 600V - IGW75N60H3. N-channel transistor, 75A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 75A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 4620pF. Cost): 240pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: Very low VCEsat. Germanium diode: no. Collector current: 140A. Ic(pulse): 225A. Marking on the case: G75H603. Number of terminals: 3. Pd (Power Dissipation, Max): 428W. RoHS: yes. Spec info: 'Trench and Fieldstop' technology IGBT transistor. Delivery time: KB. Assembly/installation: PCB through-hole mounting. Td(off): 265 ns. Td(on): 31 ns. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.85V. Maximum saturation voltage VCE(sat): 2.25V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 08/06/2025, 01:25.

Technical documentation

N-channel transistor, 75A, TO-247, TO-247 ( AC ), 600V - IGW75N60H3

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