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N-channel FETs and MOSFETs (page 13) - RPtronics
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Semiconductors Transistors
N-channel FETs and MOSFETs

N-channel FETs and MOSFETs

1186 products available
Products per page :
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Quantity in stock : 19
FQA24N60

FQA24N60

N-channel transistor, 14.9A, 23.5A, 100uA, 0.18 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 600V. ID (T=100°C...
FQA24N60
N-channel transistor, 14.9A, 23.5A, 100uA, 0.18 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 600V. ID (T=100°C): 14.9A. ID (T=25°C): 23.5A. Idss (max): 100uA. On-resistance Rds On: 0.18 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 600V. C(in): 4200pF. Cost): 550pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 470 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 90nC). G-S Protection: no. Id(imp): 94A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 310W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 90 ns. Technology: DMOS Technology. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V
FQA24N60
N-channel transistor, 14.9A, 23.5A, 100uA, 0.18 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 600V. ID (T=100°C): 14.9A. ID (T=25°C): 23.5A. Idss (max): 100uA. On-resistance Rds On: 0.18 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 600V. C(in): 4200pF. Cost): 550pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 470 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 90nC). G-S Protection: no. Id(imp): 94A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 310W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 90 ns. Technology: DMOS Technology. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V
Set of 1
9.46$ VAT incl.
(9.46$ excl. VAT)
9.46$
Quantity in stock : 310
FQA28N15

FQA28N15

N-channel transistor, 23.3A, 33A, 10uA, 0.067 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 150V. ID (T=100°C):...
FQA28N15
N-channel transistor, 23.3A, 33A, 10uA, 0.067 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 150V. ID (T=100°C): 23.3A. ID (T=25°C): 33A. Idss (max): 10uA. On-resistance Rds On: 0.067 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 150V. C(in): 1250pF. Cost): 260pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 40nC). G-S Protection: no. Id(imp): 132A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 227W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 17 ns. Technology: DMOS Technology. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
FQA28N15
N-channel transistor, 23.3A, 33A, 10uA, 0.067 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 150V. ID (T=100°C): 23.3A. ID (T=25°C): 33A. Idss (max): 10uA. On-resistance Rds On: 0.067 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 150V. C(in): 1250pF. Cost): 260pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 40nC). G-S Protection: no. Id(imp): 132A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 227W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 17 ns. Technology: DMOS Technology. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
4.52$ VAT incl.
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4.52$
Quantity in stock : 49
FQA62N25C

FQA62N25C

N-channel transistor, 39A, 62A, 100uA, 0.029 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 250V. ID (T=100°C): ...
FQA62N25C
N-channel transistor, 39A, 62A, 100uA, 0.029 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 250V. ID (T=100°C): 39A. ID (T=25°C): 62A. Idss (max): 100uA. On-resistance Rds On: 0.029 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 250V. C(in): 4830pF. Cost): 945pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 340 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no. Id(imp): 248A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 298W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 245 ns. Td(on): 75 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
FQA62N25C
N-channel transistor, 39A, 62A, 100uA, 0.029 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 250V. ID (T=100°C): 39A. ID (T=25°C): 62A. Idss (max): 100uA. On-resistance Rds On: 0.029 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 250V. C(in): 4830pF. Cost): 945pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 340 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no. Id(imp): 248A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 298W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 245 ns. Td(on): 75 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
8.28$ VAT incl.
(8.28$ excl. VAT)
8.28$
Quantity in stock : 21
FQA70N10

FQA70N10

N-channel transistor, 49.5A, 70A, 10uA, 0.019 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 100V. ID (T=100°C):...
FQA70N10
N-channel transistor, 49.5A, 70A, 10uA, 0.019 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 100V. ID (T=100°C): 49.5A. ID (T=25°C): 70A. Idss (max): 10uA. On-resistance Rds On: 0.019 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 100V. C(in): 2500pF. Cost): 720pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 280A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 214W. RoHS: yes. Spec info: Low gate charge (typical 85nC). Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 30 ns. Technology: DMOS Technology. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
FQA70N10
N-channel transistor, 49.5A, 70A, 10uA, 0.019 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 100V. ID (T=100°C): 49.5A. ID (T=25°C): 70A. Idss (max): 10uA. On-resistance Rds On: 0.019 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 100V. C(in): 2500pF. Cost): 720pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 280A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 214W. RoHS: yes. Spec info: Low gate charge (typical 85nC). Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 30 ns. Technology: DMOS Technology. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
4.10$ VAT incl.
(4.10$ excl. VAT)
4.10$
Quantity in stock : 19
FQA9N90C-F109

FQA9N90C-F109

N-channel transistor, 5.7A, 9A, 100uA, 1.12 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 900V. ID (T=100°C): 5...
FQA9N90C-F109
N-channel transistor, 5.7A, 9A, 100uA, 1.12 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 900V. ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 100uA. On-resistance Rds On: 1.12 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 900V. C(in): 2100pF. Cost): 175pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no. Id(imp): 36A. IDss (min): 10uA. Marking on the case: FQA9N90C. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. RoHS: yes. Weight: 4.7g. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 50 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V
FQA9N90C-F109
N-channel transistor, 5.7A, 9A, 100uA, 1.12 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 900V. ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 100uA. On-resistance Rds On: 1.12 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 900V. C(in): 2100pF. Cost): 175pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no. Id(imp): 36A. IDss (min): 10uA. Marking on the case: FQA9N90C. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. RoHS: yes. Weight: 4.7g. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 50 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V
Set of 1
9.39$ VAT incl.
(9.39$ excl. VAT)
9.39$
Quantity in stock : 83
FQAF11N90C

FQAF11N90C

N-channel transistor, 0.91 Ohms, TO-3PF (SOT399, 2-16E3A), TO-3PF, 900V, 4.4A, 7A, 100uA. On-resista...
FQAF11N90C
N-channel transistor, 0.91 Ohms, TO-3PF (SOT399, 2-16E3A), TO-3PF, 900V, 4.4A, 7A, 100uA. On-resistance Rds On: 0.91 Ohms. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Voltage Vds(max): 900V. ID (T=100°C): 4.4A. ID (T=25°C): 7A. Idss (max): 100uA. RoHS: yes. Pd (Power Dissipation, Max): 120W. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 60 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. C(in): 2530pF. Cost): 215pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1000 ns. Type of transistor: MOSFET. Function: Fast switching, Low Gate Charge. G-S Protection: no. Id(imp): 28A. IDss (min): 10uA. Number of terminals: 3
FQAF11N90C
N-channel transistor, 0.91 Ohms, TO-3PF (SOT399, 2-16E3A), TO-3PF, 900V, 4.4A, 7A, 100uA. On-resistance Rds On: 0.91 Ohms. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Voltage Vds(max): 900V. ID (T=100°C): 4.4A. ID (T=25°C): 7A. Idss (max): 100uA. RoHS: yes. Pd (Power Dissipation, Max): 120W. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 60 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. C(in): 2530pF. Cost): 215pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1000 ns. Type of transistor: MOSFET. Function: Fast switching, Low Gate Charge. G-S Protection: no. Id(imp): 28A. IDss (min): 10uA. Number of terminals: 3
Set of 1
6.03$ VAT incl.
(6.03$ excl. VAT)
6.03$
Quantity in stock : 90
FQD19N10L

FQD19N10L

N-channel transistor, 9.8A, 15.6A, 10uA, 0.074 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( ...
FQD19N10L
N-channel transistor, 9.8A, 15.6A, 10uA, 0.074 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 100V. ID (T=100°C): 9.8A. ID (T=25°C): 15.6A. Idss (max): 10uA. On-resistance Rds On: 0.074 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 100V. C(in): 670pF. Cost): 160pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: logic level gated MOSFET transistor. G-S Protection: no. Id(imp): 62.4A. IDss (min): 1uA. Equivalents: FQD19N10LTM. Number of terminals: 2. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 14 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1V
FQD19N10L
N-channel transistor, 9.8A, 15.6A, 10uA, 0.074 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 100V. ID (T=100°C): 9.8A. ID (T=25°C): 15.6A. Idss (max): 10uA. On-resistance Rds On: 0.074 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 100V. C(in): 670pF. Cost): 160pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: logic level gated MOSFET transistor. G-S Protection: no. Id(imp): 62.4A. IDss (min): 1uA. Equivalents: FQD19N10LTM. Number of terminals: 2. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 14 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1V
Set of 1
1.80$ VAT incl.
(1.80$ excl. VAT)
1.80$
Quantity in stock : 24
FQD30N06L

FQD30N06L

N-channel transistor, 15A, 24A, 10uA, 0.031 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPA...
FQD30N06L
N-channel transistor, 15A, 24A, 10uA, 0.031 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=100°C): 15A. ID (T=25°C): 24A. Idss (max): 10uA. On-resistance Rds On: 0.031 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 800pF. Cost): 270pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 55 ns. Type of transistor: MOSFET. Function: logic level gated MOSFET transistor. G-S Protection: no. Id(imp): 96A. IDss (min): 1uA. Marking on the case: 30N06L. Number of terminals: 2. Pd (Power Dissipation, Max): 44W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 55 ns. Td(on): 15 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1V
FQD30N06L
N-channel transistor, 15A, 24A, 10uA, 0.031 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=100°C): 15A. ID (T=25°C): 24A. Idss (max): 10uA. On-resistance Rds On: 0.031 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 800pF. Cost): 270pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 55 ns. Type of transistor: MOSFET. Function: logic level gated MOSFET transistor. G-S Protection: no. Id(imp): 96A. IDss (min): 1uA. Marking on the case: 30N06L. Number of terminals: 2. Pd (Power Dissipation, Max): 44W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 55 ns. Td(on): 15 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1V
Set of 1
1.71$ VAT incl.
(1.71$ excl. VAT)
1.71$
Quantity in stock : 40
FQD7N10L

FQD7N10L

N-channel transistor, 3.67A, 23.2A, 10uA, 0.258 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) (...
FQD7N10L
N-channel transistor, 3.67A, 23.2A, 10uA, 0.258 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 100V. ID (T=100°C): 3.67A. ID (T=25°C): 23.2A. Idss (max): 10uA. On-resistance Rds On: 0.258 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 100V. C(in): 220pF. Cost): 55pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Low Gate Charge. G-S Protection: no. Id(imp): 5.8A. IDss (min): 1uA. Marking on the case: FQD7N10L. Number of terminals: 2. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 17 ns. Td(on): 9 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1V
FQD7N10L
N-channel transistor, 3.67A, 23.2A, 10uA, 0.258 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 100V. ID (T=100°C): 3.67A. ID (T=25°C): 23.2A. Idss (max): 10uA. On-resistance Rds On: 0.258 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 100V. C(in): 220pF. Cost): 55pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Low Gate Charge. G-S Protection: no. Id(imp): 5.8A. IDss (min): 1uA. Marking on the case: FQD7N10L. Number of terminals: 2. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 17 ns. Td(on): 9 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1V
Set of 1
2.13$ VAT incl.
(2.13$ excl. VAT)
2.13$
Quantity in stock : 23
FQP12N60C

FQP12N60C

N-channel transistor, TO-220, TO-220, 600V, 7.4A, 12A, 10uA, 0.53 Ohms. Housing: TO-220. Housing (ac...
FQP12N60C
N-channel transistor, TO-220, TO-220, 600V, 7.4A, 12A, 10uA, 0.53 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. ID (T=100°C): 7.4A. ID (T=25°C): 12A. Idss (max): 10uA. On-resistance Rds On: 0.53 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 30 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. C(in): 1760pF. Cost): 182pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 420 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 48A. IDss (min): 1uA. Marking on the case: FQP12N60C. Number of terminals: 3. Pd (Power Dissipation, Max): 225W
FQP12N60C
N-channel transistor, TO-220, TO-220, 600V, 7.4A, 12A, 10uA, 0.53 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. ID (T=100°C): 7.4A. ID (T=25°C): 12A. Idss (max): 10uA. On-resistance Rds On: 0.53 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 30 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. C(in): 1760pF. Cost): 182pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 420 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 48A. IDss (min): 1uA. Marking on the case: FQP12N60C. Number of terminals: 3. Pd (Power Dissipation, Max): 225W
Set of 1
4.99$ VAT incl.
(4.99$ excl. VAT)
4.99$
Quantity in stock : 55
FQP13N10

FQP13N10

N-channel transistor, 9.05A, 12.8A, 10uA, 0.142 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 9.05A. ...
FQP13N10
N-channel transistor, 9.05A, 12.8A, 10uA, 0.142 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 9.05A. ID (T=25°C): 12.8A. Idss (max): 10uA. On-resistance Rds On: 0.142 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 345pF. Cost): 100pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 72 ns. Type of transistor: MOSFET. Function: N-CH/100V/12.8A/0.18 Ohms MOSFET NON MPQ. G-S Protection: no. Id(imp): 51.2A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 65W. RoHS: yes. Weight: 2.07g. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 5 ns. Technology: N-Channel enhancement mode power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
FQP13N10
N-channel transistor, 9.05A, 12.8A, 10uA, 0.142 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 9.05A. ID (T=25°C): 12.8A. Idss (max): 10uA. On-resistance Rds On: 0.142 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 345pF. Cost): 100pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 72 ns. Type of transistor: MOSFET. Function: N-CH/100V/12.8A/0.18 Ohms MOSFET NON MPQ. G-S Protection: no. Id(imp): 51.2A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 65W. RoHS: yes. Weight: 2.07g. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 5 ns. Technology: N-Channel enhancement mode power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
2.38$ VAT incl.
(2.38$ excl. VAT)
2.38$
Out of stock
FQP13N50

FQP13N50

N-channel transistor, 7.9A, 12.5A, 10uA, 0.33 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 7.9A. ID ...
FQP13N50
N-channel transistor, 7.9A, 12.5A, 10uA, 0.33 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 7.9A. ID (T=25°C): 12.5A. Idss (max): 10uA. On-resistance Rds On: 0.33 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 1800pF. Cost): 245pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 290 ns. Type of transistor: MOSFET. Function: Fast Switching Speed. G-S Protection: no. Id(imp): 50A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 170W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 40 ns. Technology: N-channel MOSFET transistor (DMOS, QFET). Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V
FQP13N50
N-channel transistor, 7.9A, 12.5A, 10uA, 0.33 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 7.9A. ID (T=25°C): 12.5A. Idss (max): 10uA. On-resistance Rds On: 0.33 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 1800pF. Cost): 245pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 290 ns. Type of transistor: MOSFET. Function: Fast Switching Speed. G-S Protection: no. Id(imp): 50A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 170W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 40 ns. Technology: N-channel MOSFET transistor (DMOS, QFET). Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V
Set of 1
4.32$ VAT incl.
(4.32$ excl. VAT)
4.32$
Quantity in stock : 15
FQP13N50C

FQP13N50C

N-channel transistor, 8A, 13A, 10uA, 0.39 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 8A. ID (T=25Â...
FQP13N50C
N-channel transistor, 8A, 13A, 10uA, 0.39 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 8A. ID (T=25°C): 13A. Idss (max): 10uA. On-resistance Rds On: 0.39 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 1580pF. Cost): 180pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 410 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 52A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 195W. RoHS: yes. Spec info: Low gate charge (typical 43nC). Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 25 ns. Technology: N-channel MOSFET transistor (DMOS, QFET). Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
FQP13N50C
N-channel transistor, 8A, 13A, 10uA, 0.39 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 8A. ID (T=25°C): 13A. Idss (max): 10uA. On-resistance Rds On: 0.39 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 1580pF. Cost): 180pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 410 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 52A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 195W. RoHS: yes. Spec info: Low gate charge (typical 43nC). Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 25 ns. Technology: N-channel MOSFET transistor (DMOS, QFET). Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
6.80$ VAT incl.
(6.80$ excl. VAT)
6.80$
Quantity in stock : 20
FQP19N10

FQP19N10

N-channel transistor, 13.5A, 19A, 10uA, 0.078 Ohms, TO-220, TO-220, 100V. ID (T=100°C): 13.5A. ID (...
FQP19N10
N-channel transistor, 13.5A, 19A, 10uA, 0.078 Ohms, TO-220, TO-220, 100V. ID (T=100°C): 13.5A. ID (T=25°C): 19A. Idss (max): 10uA. On-resistance Rds On: 0.078 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 100V. C(in): 600pF. Cost): 165pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 78 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 76A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 7.5 ns. Technology: DMOS, QFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
FQP19N10
N-channel transistor, 13.5A, 19A, 10uA, 0.078 Ohms, TO-220, TO-220, 100V. ID (T=100°C): 13.5A. ID (T=25°C): 19A. Idss (max): 10uA. On-resistance Rds On: 0.078 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 100V. C(in): 600pF. Cost): 165pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 78 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 76A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 7.5 ns. Technology: DMOS, QFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
1.81$ VAT incl.
(1.81$ excl. VAT)
1.81$
Quantity in stock : 1
FQP19N20C

FQP19N20C

N-channel transistor, 12.1A, 19A, 19A, 0.14 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 12.1A. ID (...
FQP19N20C
N-channel transistor, 12.1A, 19A, 19A, 0.14 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 12.1A. ID (T=25°C): 19A. Idss (max): 19A. On-resistance Rds On: 0.14 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Fast switching, td(on)15ns, td(off)135ns. Id(imp): 76A. Pd (Power Dissipation, Max): 139W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: N-channel MOSFET transistor (DMOS, QFET)
FQP19N20C
N-channel transistor, 12.1A, 19A, 19A, 0.14 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 12.1A. ID (T=25°C): 19A. Idss (max): 19A. On-resistance Rds On: 0.14 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Fast switching, td(on)15ns, td(off)135ns. Id(imp): 76A. Pd (Power Dissipation, Max): 139W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: N-channel MOSFET transistor (DMOS, QFET)
Set of 1
2.93$ VAT incl.
(2.93$ excl. VAT)
2.93$
Quantity in stock : 45
FQP33N10

FQP33N10

N-channel transistor, 23A, 33A, 10uA, 0.04 Ohms, TO-220, TO-220, 100V. ID (T=100°C): 23A. ID (T=25Â...
FQP33N10
N-channel transistor, 23A, 33A, 10uA, 0.04 Ohms, TO-220, TO-220, 100V. ID (T=100°C): 23A. ID (T=25°C): 33A. Idss (max): 10uA. On-resistance Rds On: 0.04 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 100V. C(in): 1150pF. Cost): 320pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: Fast switching, Low Gate Charge. G-S Protection: no. Id(imp): 132A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 127W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 80 ns. Td(on): 15 ns. Technology: DMOS, QFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
FQP33N10
N-channel transistor, 23A, 33A, 10uA, 0.04 Ohms, TO-220, TO-220, 100V. ID (T=100°C): 23A. ID (T=25°C): 33A. Idss (max): 10uA. On-resistance Rds On: 0.04 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 100V. C(in): 1150pF. Cost): 320pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: Fast switching, Low Gate Charge. G-S Protection: no. Id(imp): 132A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 127W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 80 ns. Td(on): 15 ns. Technology: DMOS, QFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
2.71$ VAT incl.
(2.71$ excl. VAT)
2.71$
Quantity in stock : 8
FQP44N10

FQP44N10

N-channel transistor, 30.8A, 43.5A, 10uA, 0.03 Ohms, TO-220, TO-220, 100V. ID (T=100°C): 30.8A. ID ...
FQP44N10
N-channel transistor, 30.8A, 43.5A, 10uA, 0.03 Ohms, TO-220, TO-220, 100V. ID (T=100°C): 30.8A. ID (T=25°C): 43.5A. Idss (max): 10uA. On-resistance Rds On: 0.03 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 100V. C(in): 1400pF. Cost): 425pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 98 ns. Type of transistor: MOSFET. Function: Fast switching, Low Gate Charge. G-S Protection: no. Id(imp): 174A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 146W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 19 ns. Technology: DMOS, QFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
FQP44N10
N-channel transistor, 30.8A, 43.5A, 10uA, 0.03 Ohms, TO-220, TO-220, 100V. ID (T=100°C): 30.8A. ID (T=25°C): 43.5A. Idss (max): 10uA. On-resistance Rds On: 0.03 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 100V. C(in): 1400pF. Cost): 425pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 98 ns. Type of transistor: MOSFET. Function: Fast switching, Low Gate Charge. G-S Protection: no. Id(imp): 174A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 146W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 19 ns. Technology: DMOS, QFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
2.27$ VAT incl.
(2.27$ excl. VAT)
2.27$
Quantity in stock : 45
FQP46N15

FQP46N15

N-channel transistor, 32.2A, 45.6A, 10uA, 0.033 Ohms, TO-220, TO-220, 150V. ID (T=100°C): 32.2A. ID...
FQP46N15
N-channel transistor, 32.2A, 45.6A, 10uA, 0.033 Ohms, TO-220, TO-220, 150V. ID (T=100°C): 32.2A. ID (T=25°C): 45.6A. Idss (max): 10uA. On-resistance Rds On: 0.033 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 150V. C(in): 2500pF. Cost): 520pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 182A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 210W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 210 ns. Td(on): 35 ns. Technology: DMOS, QFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
FQP46N15
N-channel transistor, 32.2A, 45.6A, 10uA, 0.033 Ohms, TO-220, TO-220, 150V. ID (T=100°C): 32.2A. ID (T=25°C): 45.6A. Idss (max): 10uA. On-resistance Rds On: 0.033 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 150V. C(in): 2500pF. Cost): 520pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 182A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 210W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 210 ns. Td(on): 35 ns. Technology: DMOS, QFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
3.13$ VAT incl.
(3.13$ excl. VAT)
3.13$
Quantity in stock : 129
FQP50N06

FQP50N06

N-channel transistor, 35.4A, 50A, 10uA, 0.018 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 35.4A. ID (T...
FQP50N06
N-channel transistor, 35.4A, 50A, 10uA, 0.018 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 35.4A. ID (T=25°C): 50A. Idss (max): 10uA. On-resistance Rds On: 0.018 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. C(in): 1180pF. Cost): 440pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 52 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 200A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 120W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 15 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
FQP50N06
N-channel transistor, 35.4A, 50A, 10uA, 0.018 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 35.4A. ID (T=25°C): 50A. Idss (max): 10uA. On-resistance Rds On: 0.018 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. C(in): 1180pF. Cost): 440pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 52 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 200A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 120W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 15 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
1.65$ VAT incl.
(1.65$ excl. VAT)
1.65$
Quantity in stock : 315
FQP50N06L

FQP50N06L

N-channel transistor, PCB soldering, TO-220, 60V, 52.4A. Housing: PCB soldering. Housing: TO-220. Dr...
FQP50N06L
N-channel transistor, PCB soldering, TO-220, 60V, 52.4A. Housing: PCB soldering. Housing: TO-220. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 52.4A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQP50N06L. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.025 Ohms @ 26.2A. Gate breakdown voltage Ugs [V]: 2.5V. Switch-on time ton [nsec.]: 50 ns. Switch-off delay tf[nsec.]: 170 ns. Ciss Gate Capacitance [pF]: 1630pF. Maximum dissipation Ptot [W]: 121W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
FQP50N06L
N-channel transistor, PCB soldering, TO-220, 60V, 52.4A. Housing: PCB soldering. Housing: TO-220. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 52.4A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQP50N06L. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.025 Ohms @ 26.2A. Gate breakdown voltage Ugs [V]: 2.5V. Switch-on time ton [nsec.]: 50 ns. Switch-off delay tf[nsec.]: 170 ns. Ciss Gate Capacitance [pF]: 1630pF. Maximum dissipation Ptot [W]: 121W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
Set of 1
4.40$ VAT incl.
(4.40$ excl. VAT)
4.40$
Quantity in stock : 40
FQP5N60C

FQP5N60C

N-channel transistor, 2.6A, 4.5A, 10uA, 2 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 2.6A. ID (T=25Â...
FQP5N60C
N-channel transistor, 2.6A, 4.5A, 10uA, 2 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 2.6A. ID (T=25°C): 4.5A. Idss (max): 10uA. On-resistance Rds On: 2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 515pF. Cost): 55pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 15nC, Low Crss 6.5pF. G-S Protection: no. Id(imp): 18A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 10 ns. Technology: 'enhancement mode power field effect transistor'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
FQP5N60C
N-channel transistor, 2.6A, 4.5A, 10uA, 2 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 2.6A. ID (T=25°C): 4.5A. Idss (max): 10uA. On-resistance Rds On: 2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 515pF. Cost): 55pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 15nC, Low Crss 6.5pF. G-S Protection: no. Id(imp): 18A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 10 ns. Technology: 'enhancement mode power field effect transistor'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
2.66$ VAT incl.
(2.66$ excl. VAT)
2.66$
Quantity in stock : 104
FQP7N80

FQP7N80

N-channel transistor, 4.2A, 6.6A, 100uA, 1.2 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 4.2A. ID (T=...
FQP7N80
N-channel transistor, 4.2A, 6.6A, 100uA, 1.2 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 4.2A. ID (T=25°C): 6.6A. Idss (max): 100uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 1420pF. Cost): 150pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 26.4A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 167W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 95 ns. Td(on): 35 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V
FQP7N80
N-channel transistor, 4.2A, 6.6A, 100uA, 1.2 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 4.2A. ID (T=25°C): 6.6A. Idss (max): 100uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 1420pF. Cost): 150pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 26.4A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 167W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 95 ns. Td(on): 35 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V
Set of 1
4.84$ VAT incl.
(4.84$ excl. VAT)
4.84$
Quantity in stock : 63
FQP7N80C

FQP7N80C

N-channel transistor, 4.2A, 6.6A, 100uA, 1.57 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 4.2A. ID (T...
FQP7N80C
N-channel transistor, 4.2A, 6.6A, 100uA, 1.57 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 4.2A. ID (T=25°C): 6.6A. Idss (max): 100uA. On-resistance Rds On: 1.57 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 1290pF. Cost): 120pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 650 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 27nC, Low Crss 10pF. G-S Protection: no. Id(imp): 26.4A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 167W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 35 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V
FQP7N80C
N-channel transistor, 4.2A, 6.6A, 100uA, 1.57 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 4.2A. ID (T=25°C): 6.6A. Idss (max): 100uA. On-resistance Rds On: 1.57 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 1290pF. Cost): 120pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 650 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 27nC, Low Crss 10pF. G-S Protection: no. Id(imp): 26.4A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 167W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 35 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V
Set of 1
2.65$ VAT incl.
(2.65$ excl. VAT)
2.65$
Quantity in stock : 27
FQP85N06

FQP85N06

N-channel transistor, 60A, 85A, 10uA, 0.008 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 60A. ID (T=25Â...
FQP85N06
N-channel transistor, 60A, 85A, 10uA, 0.008 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 60A. ID (T=25°C): 85A. Idss (max): 10uA. On-resistance Rds On: 0.008 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. C(in): 3170pF. Cost): 1150pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 300A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 175 ns. Td(on): 40 ns. Technology: DMOS, QFET® MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
FQP85N06
N-channel transistor, 60A, 85A, 10uA, 0.008 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 60A. ID (T=25°C): 85A. Idss (max): 10uA. On-resistance Rds On: 0.008 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. C(in): 3170pF. Cost): 1150pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 300A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 175 ns. Td(on): 40 ns. Technology: DMOS, QFET® MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
3.76$ VAT incl.
(3.76$ excl. VAT)
3.76$
Quantity in stock : 76
FQP9N90C

FQP9N90C

N-channel transistor, 2.8A, 8A, 8A, 1.12 Ohms, TO-220, TO-220, 900V. ID (T=100°C): 2.8A. ID (T=25°...
FQP9N90C
N-channel transistor, 2.8A, 8A, 8A, 1.12 Ohms, TO-220, TO-220, 900V. ID (T=100°C): 2.8A. ID (T=25°C): 8A. Idss (max): 8A. On-resistance Rds On: 1.12 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 900V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 45nC, Low Crss 14pF. Id(imp): 32A. Pd (Power Dissipation, Max): 205W. Assembly/installation: PCB through-hole mounting. Technology: DMOS, QFET
FQP9N90C
N-channel transistor, 2.8A, 8A, 8A, 1.12 Ohms, TO-220, TO-220, 900V. ID (T=100°C): 2.8A. ID (T=25°C): 8A. Idss (max): 8A. On-resistance Rds On: 1.12 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 900V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 45nC, Low Crss 14pF. Id(imp): 32A. Pd (Power Dissipation, Max): 205W. Assembly/installation: PCB through-hole mounting. Technology: DMOS, QFET
Set of 1
6.14$ VAT incl.
(6.14$ excl. VAT)
6.14$
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