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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 10A, TO-247, TO-247, 1200V - HGTG5N120BND

N-channel transistor, 10A, TO-247, TO-247, 1200V - HGTG5N120BND
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 5.81$ 5.81$
2 - 2 5.52$ 5.52$
3 - 4 5.34$ 5.34$
5 - 9 5.22$ 5.22$
10 - 19 5.11$ 5.11$
20 - 29 4.93$ 4.93$
30 - 75 4.76$ 4.76$
Quantity U.P
1 - 1 5.81$ 5.81$
2 - 2 5.52$ 5.52$
3 - 4 5.34$ 5.34$
5 - 9 5.22$ 5.22$
10 - 19 5.11$ 5.11$
20 - 29 4.93$ 4.93$
30 - 75 4.76$ 4.76$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 75
Set of 1

N-channel transistor, 10A, TO-247, TO-247, 1200V - HGTG5N120BND. N-channel transistor, 10A, TO-247, TO-247, 1200V. Ic(T=100°C): 10A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 1200V. CE diode: yes. Channel type: N. Germanium diode: no. Collector current: 25A. Ic(pulse): 40A. Marking on the case: 5N120BND. Number of terminals: 3. Pd (Power Dissipation, Max): 167W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 182 ns. Td(on): 20 ns. Technology: NPT series IGBT transistor with anti-parallel hyperfast diode. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.45V. Maximum saturation voltage VCE(sat): 3.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 6V. Gate/emitter voltage VGE(th)max.: 6.8V. Original product from manufacturer ON Semiconductor. Quantity in stock updated on 08/06/2025, 03:25.

Technical documentation

Equivalent products :

Quantity in stock : 47
HGTG10N120BND

HGTG10N120BND

N-channel transistor, 17A, TO-247, TO-247, 1200V. Ic(T=100°C): 17A. Housing: TO-247. Housing (accor...
HGTG10N120BND
N-channel transistor, 17A, TO-247, TO-247, 1200V. Ic(T=100°C): 17A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 1200V. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Germanium diode: no. Collector current: 35A. Ic(pulse): 80A. Marking on the case: 10N120BND. Number of terminals: 3. Pd (Power Dissipation, Max): 298W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 165 ns. Td(on): 23 ns. Technology: NPT series IGBT transistor with anti-parallel hyperfast diode. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.45V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 6V. Gate/emitter voltage VGE(th)max.: 6.8V
HGTG10N120BND
N-channel transistor, 17A, TO-247, TO-247, 1200V. Ic(T=100°C): 17A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 1200V. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Germanium diode: no. Collector current: 35A. Ic(pulse): 80A. Marking on the case: 10N120BND. Number of terminals: 3. Pd (Power Dissipation, Max): 298W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 165 ns. Td(on): 23 ns. Technology: NPT series IGBT transistor with anti-parallel hyperfast diode. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.45V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 6V. Gate/emitter voltage VGE(th)max.: 6.8V
Set of 1
6.24$ VAT incl.
(6.24$ excl. VAT)
6.24$

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