N-channel FETs and MOSFETs

N-channel transistor, 1.4A, 2.7A, 2.7A, 1.5 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 200V. ID (T=100°C): 1.4A. ID (T=25°C): 2.7A. Idss (max): 2.7A. On-resistance Rds On: 1.5 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 200V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: MOS-N-FET. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting

N-channel transistor, 20mA, TO-92, TO-92. ID (T=25°C): 20mA. Housing: TO-92. Housing (according to data sheet): TO-92. Channel type: N. Quantity per case: 1. Type of transistor: JFET. Function: VHF/RF amplifier. Number of terminals: 3. Assembly/installation: PCB through-hole mounting. Technology: Epitaxial. Drain-source protection : no. G-S Protection: no

N-channel transistor, 9mA, TO-92, TO-92, 25V. Idss (max): 9mA. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 25V. C(in): 4.5pF. Channel type: N. Quantity per case: 1. Type of transistor: JFET. Function: Uni sym. IDss (min): 2mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: general purpose JFET transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 3.5V. Gate/source voltage (off) max.: 7V. Gate/source voltage (off) min.: 1V. Drain-source protection : no. G-S Protection: no

N-channel transistor, 16mA, TO-92, TO-92, 25V. Idss (max): 16mA. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 25V. C(in): 2250pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 53 ns. Type of transistor: FET. Function: Uni sym. IDss (min): 4mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 4mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: general purpose JFET transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 4.5V. Gate/source voltage (off) max.: 8V. Gate/source voltage (off) min.: 2V. Drain-source protection : no. G-S Protection: no

N-channel transistor, 5mA, TO-92, TO-92, 25V. Idss (max): 5mA. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 25V. C(in): 5pF. Cost): 2pF. Channel type: N. Quantity per case: 1. Type of transistor: JFET. IDss (min): 1mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. Assembly/installation: PCB through-hole mounting. Technology: J-FET. Vgs(th) min.: 3V. Function: VHF/UHF, RF Amplifier

N-channel transistor, PCB soldering, TO-46, 20V, 10mA. Housing: PCB soldering. Housing: TO-46. Drain-source voltage Uds [V]: 20V. Drain current Idss [A] @ Ug=0V: 10mA. RoHS: yes. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N6550. Gate-source breakpoint voltage Ugss [V] @ Uds=0V: -3V @ +10V. Maximum dissipation Ptot [W]: 0.4W. Component family: N-Channel JFET Transistor. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +125°C

N-channel transistor, 0.2A, 1000uA, 5 Ohms, TO-92, O-92Ammo-Pack, 60V. ID (T=25°C): 0.2A. Idss (max): 1000uA. On-resistance Rds On: 5 Ohms. Housing: TO-92. Housing (according to data sheet): O-92Ammo-Pack. Voltage Vds(max): 60V. C(in): 60pF. Cost): 25pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 0.5A. IDss (min): 1uA. Marking on the case: 2n7000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.35W. Weight: 0.18g. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 10 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 0.8V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 0.2A, 1000uA, 5 Ohms, TO-92, TO-92, 60V. ID (T=25°C): 0.2A. Idss (max): 1000uA. On-resistance Rds On: 5 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 60V. C(in): 60pF. Cost): 25pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 0.5A. IDss (min): 1uA. Marking on the case: 2n7000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.35W. Weight: 0.18g. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 10 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 0.8V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 0.075A, 0.115A, 500uA, 7.5 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 60V. ID (T=100°C): 0.075A. ID (T=25°C): 0.115A. Idss (max): 500uA. On-resistance Rds On: 7.5 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 60V. RoHS: yes. C(in): 50pF. Cost): 25pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: Small Signal MOSFET transistor. Id(imp): 0.8A. IDss (min): 1uA. Marking on the case: 702. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 20 ns. Technology: V-MOS. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Spec info: 702. G-S Protection: no

N-channel transistor, PCB soldering (SMD), SOT-23, 60V, 0.210A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 0.210A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: K72. Drain current through resistor Rds [Ohm] @ Ids [A]: 13.5 Ohms @ 0.5A. Gate breakdown voltage Ugs [V]: 2.5V. Switch-on time ton [nsec.]: 2.8 ns. Switch-off delay tf[nsec.]: 7.6 ns. Ciss Gate Capacitance [pF]: 50pF. Maximum dissipation Ptot [W]: 0.37W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 0.14A, 0.23A, 500uA, 3.2 Ohms, SOT-363 ( SC-88 ), 60V. ID (T=100°C): 0.14A. ID (T=25°C): 0.23A. Idss (max): 500uA. On-resistance Rds On: 3.2 Ohms. Housing: SOT-363 ( SC-88 ). Voltage Vds(max): 60V. C(in): 22pF. Cost): 11pF. Channel type: N. Quantity per case: 2. Type of transistor: MOSFET. Id(imp): 0.8A. IDss (min): 1uA. Marking on the case: K72. Number of terminals: 6. Pd (Power Dissipation, Max): 400mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 11 ns. Td(on): 7 ns. Technology: 'Enhancement Mode MOSFET'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Function: Motor Control, Power Management. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering (SMD), SOT-23, 60V, 0.115A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 0.115A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 72. Drain current through resistor Rds [Ohm] @ Ids [A]: 13.5 Ohms @ 0.05A. Gate breakdown voltage Ugs [V]: 2.5V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 20 ns. Ciss Gate Capacitance [pF]: 50pF. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 30A, TO-220FP, TO-220D-A1, 300V. Ic(T=100°C): 30A. Housing: TO-220FP. Housing (according to data sheet): TO-220D-A1. Collector/emitter voltage Vceo: 300V. C(in): 580pF. Cost): 86pF. Channel type: N. Function: Plasma display driver. Collector current: 30A. Ic(pulse): 60.4k Ohms. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 120ns. Td(on): 87 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5.5V. Spec info: High speed hall time--tf=200nS(typ). CE diode: no. Germanium diode: no

N-channel transistor, 40A, TO-220FP, TO-220D-A1, 540V. Ic(T=100°C): 40A. Housing: TO-220FP. Housing (according to data sheet): TO-220D-A1. Collector/emitter voltage Vceo: 540V. C(in): 1200pF. Cost): 125pF. Channel type: N. Function: VGE(th) VCE=10V, IC=1mA 3.0V...5.5V. Collector current: 40A. Ic(pulse): 230A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 75 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.95V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5.5V. Spec info: High-speed switching--tf=185ns (typ). CE diode: no. Germanium diode: no

N-channel transistor, 20mA, 2.5mA, 2.5mA, TO-92, TO-92, 30 v. ID (T=25°C): 20mA. Idss: 2.5mA. Idss (max): 2.5mA. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: FET. IDss (min): 2.5mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. Assembly/installation: PCB through-hole mounting. Function: HF amplification

N-channel transistor, 6A, 300uA, 0.95 Ohms, TO-220, TO-220, 600V. ID (T=25°C): 6A. Idss (max): 300uA. On-resistance Rds On: 0.95 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 1400pF. Cost): 250pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 24A. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Td(off): 8.5 ns. Td(on): 4 ns. Technology: V-MOS. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

N-channel transistor, 6A, 300uA, 0.95 Ohms, TO-220FP, TO-220FP, 600V. ID (T=25°C): 6A. Idss (max): 300uA. On-resistance Rds On: 0.95 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 1400pF. Cost): 250pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 24A. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Td(off): 85 ns. Td(on): 40 ns. Technology: Field Effect Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Spec info: Low Leakage Current Low Drain Source ON resistance. G-S Protection: no

N-channel transistor, TO-3PN ( 2-16C1B ), 2-16C1B, 1000V, 8A, 300uA, 1.5 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1B. Voltage Vds(max): 1000V. ID (T=25°C): 8A. Idss (max): 300uA. On-resistance Rds On: 1.5 Ohms. Td(off): 100 ns. Td(on): 40 ns. Technology: Silicon N Channel Mos. Operating temperature: -55...+150°C. Gate/emitter voltage VGE(th)max.: 3.5V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1.5V. C(in): 1300pF. Cost): 180pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 24A. Marking on the case: K1120. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. Spec info: DC-DC Converter and Motor Drive Application. Weight: 4.6g. Assembly/installation: PCB through-hole mounting. G-S Protection: no

N-channel transistor, 20A, 250uA, 0.27 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V. ID (T=25°C): 20A. Idss (max): 250uA. On-resistance Rds On: 0.27 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. C(in): 2800pF. Cost): 780pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 80A. Number of terminals: 3. Pd (Power Dissipation, Max): 120W. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 32 ns. Technology: V-MOS. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Spec info: High speed switching Low drive current. G-S Protection: yes

N-channel transistor, 30A, 30A, 0.08 Ohms, 60V. ID (T=25°C): 30A. Idss (max): 30A. On-resistance Rds On: 0.08 Ohms. Voltage Vds(max): 60V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 40W

N-channel transistor, 8A, 300uA, 0.95 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 600V. ID (T=25°C): 8A. Idss (max): 300uA. On-resistance Rds On: 0.95 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 600V. C(in): 1400pF. Cost): 250pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 24A. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Td(off): 85 ns. Td(on): 40 ns. Technology: V-MOS-L. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1.5V. G-S Protection: no

N-channel transistor, 8A, 500uA, 1.5 Ohms, TO-3PF, 900V, TO-3PF (SOT399, 2-16E3A). ID (T=25°C): 8A. Idss (max): 500uA. On-resistance Rds On: 1.5 Ohms. Housing (according to data sheet): TO-3PF. Voltage Vds(max): 900V. Housing: TO-3PF (SOT399, 2-16E3A). C(in): 1400pF. Cost): 200pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1000 ns. Type of transistor: MOSFET. Function: Low Driving Power High Speed Switching. Id(imp): 23A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 300 ns. Td(on): 50 ns. Technology: V-MOS. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 2.5V. G-S Protection: no

N-channel transistor, PCB soldering, TO-220, 500V, 5A. Housing: PCB soldering. Housing: TO-220. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 5A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: K1246. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.4 Ohms @ 2.5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 100 ns. Switch-off delay tf[nsec.]: 180 ns. Ciss Gate Capacitance [pF]: 650pF. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 3A, 5A, 100uA, 4 Ohms, TO-3PN 13-16A1A, 1400V. ID (T=100°C): 3A. ID (T=25°C): 5A. Idss (max): 100uA. On-resistance Rds On: 4 Ohms. Housing: TO-3PN 13-16A1A. Voltage Vds(max): 1400V. C(in): 1800pF. Cost): 500pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 1400 ns. Type of transistor: MOSFET. Function: High-Voltage Switching. Id(imp): 10A. Pd (Power Dissipation, Max): 240W. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 25 ns. Technology: MOSFET transistor. Operating temperature: -...+150°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 3.5V. Gate/source voltage (off) min.: 1.5V. Drain-source protection : yes. Germanium diode: no

N-channel transistor, 15A, 30A, 30A, 0.028 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 15A. ID (T=25°C): 30A. Idss (max): 30A. On-resistance Rds On: 0.028 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: V-MOS. Spec info: Logic level compatible