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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 16A, 25A, 25uA, 0.036 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V - GJ9971

N-channel transistor, 16A, 25A, 25uA, 0.036 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V - GJ9971
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 1.42$ 1.42$
5 - 9 1.35$ 1.35$
10 - 20 1.27$ 1.27$
Quantity U.P
1 - 4 1.42$ 1.42$
5 - 9 1.35$ 1.35$
10 - 20 1.27$ 1.27$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 20
Set of 1

N-channel transistor, 16A, 25A, 25uA, 0.036 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V - GJ9971. N-channel transistor, 16A, 25A, 25uA, 0.036 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=100°C): 16A. ID (T=25°C): 25A. Idss (max): 25uA. On-resistance Rds On: 0.036 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 1700pF. Cost): 160pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 37 ns. Type of transistor: MOSFET. Function: Logic level gated transistor. G-S Protection: no. Id(imp): 80A. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 39W. RoHS: yes. Spec info: IDM--80A pulse. Assembly/installation: surface-mounted component (SMD). Td(off): 26 ns. Td(on): 9 ns. Technology: ENHANCEMENT MODE POWER MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Original product from manufacturer Gtm Corporatoin. Quantity in stock updated on 11/05/2025, 13:25.

Technical documentation

Equivalent products :

Quantity in stock : 97
NTD20N06L

NTD20N06L

N-channel transistor, 10A, 20A, 10uA, 0.039 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPA...
NTD20N06L
N-channel transistor, 10A, 20A, 10uA, 0.039 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=100°C): 10A. ID (T=25°C): 20A. Idss (max): 10uA. On-resistance Rds On: 0.039 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 707pF. Cost): 224pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 42 ns. Type of transistor: MOSFET. Function: Logic-Level. G-S Protection: no. Id(imp): 60A. IDss (min): 1uA. Marking on the case: 20N6LG. Number of terminals: 2. Pd (Power Dissipation, Max): 60W. RoHS: yes. Spec info: IDM--60A pulse/10uS. Assembly/installation: surface-mounted component (SMD). Td(off): 25 ns. Td(on): 9.6 ns. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 15V. Vgs(th) max.: 2V. Vgs(th) min.: 1V
NTD20N06L
N-channel transistor, 10A, 20A, 10uA, 0.039 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=100°C): 10A. ID (T=25°C): 20A. Idss (max): 10uA. On-resistance Rds On: 0.039 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 707pF. Cost): 224pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 42 ns. Type of transistor: MOSFET. Function: Logic-Level. G-S Protection: no. Id(imp): 60A. IDss (min): 1uA. Marking on the case: 20N6LG. Number of terminals: 2. Pd (Power Dissipation, Max): 60W. RoHS: yes. Spec info: IDM--60A pulse/10uS. Assembly/installation: surface-mounted component (SMD). Td(off): 25 ns. Td(on): 9.6 ns. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 15V. Vgs(th) max.: 2V. Vgs(th) min.: 1V
Set of 1
1.89$ VAT incl.
(1.89$ excl. VAT)
1.89$

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