N-channel FETs and MOSFETs

N-channel transistor, 12.1A, 19A, 100uA, 0.14 Ohms, TO-220FP, TO-220F, 200V. ID (T=100°C): 12.1A. ID (T=25°C): 19A. Idss (max): 100uA. On-resistance Rds On: 0.14 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. C(in): 830pF. Cost): 195pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 208 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 76A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 43W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 135 ns. Td(on): 15 ns. Technology: N-channel MOSFET transistor (DMOS, QFET). Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) min.: 2V. Vgs(th) max.: 4 v

N-channel transistor, 11.1A, 15.7A, 10uA, 0.042 Ohms, TO-220FP, TO-220F, 60V. ID (T=100°C): 11.1A. ID (T=25°C): 15.7A. Idss (max): 10uA. On-resistance Rds On: 0.042 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 60V. C(in): 480pF. Cost): 175pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 54 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 17nC, Low Crss 5.6pF. G-S Protection: no. Id(imp): 62.8A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 10 ns. Technology: DMOS, QFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V

N-channel transistor, 1.9A, 3A, 100uA, 4 Ohms, TO-220FP, TO-220F, 800V. ID (T=100°C): 1.9A. ID (T=25°C): 3A. Idss (max): 100uA. On-resistance Rds On: 4 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 800V. C(in): 543pF. Cost): 54pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 642 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 13nC, Low Crss 5.5pF. G-S Protection: no. Id(imp): 12A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 39W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 22.5 ns. Td(on): 15 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 2.3A, 4A, 100uA, 3.5 Ohms, TO-220FP, TO-220F, 900V. ID (T=100°C): 2.3A. ID (T=25°C): 4A. Idss (max): 100uA. On-resistance Rds On: 3.5 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 900V. C(in): 740pF. Cost): 65pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 17nC, Low Crss 5.6pF. G-S Protection: no. Id(imp): 16A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 47W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 25 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, 2.9A, 5A, 10uA, 1.14 Ohms, TO-220FP, TO-220F, 500V. ID (T=100°C): 2.9A. ID (T=25°C): 5A. Idss (max): 10uA. On-resistance Rds On: 1.14 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 500V. C(in): 480pF. Cost): 80pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 263 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 18nC, Low Crss 15pF. G-S Protection: no. Id(imp): 20A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 12 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 2.6A, 4.5A, 10uA, 2 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 2.6A. ID (T=25°C): 4.5A. Idss (max): 10uA. On-resistance Rds On: 2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 515pF. Cost): 55pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 15nC, Low Crss 6.5pF. G-S Protection: no. Id(imp): 18A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 33W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 46 ns. Td(on): 10 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 4.2A, 6.6A, 100uA, 1.57 Ohms, TO-220FP, TO-220F, 800V. ID (T=100°C): 4.2A. ID (T=25°C): 6.6A. Idss (max): 100uA. On-resistance Rds On: 1.57 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 800V. C(in): 1290pF. Cost): 120pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 60 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 26.4A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 56W. RoHS: yes. Spec info: Low gate charge (typical 40nC), Low Crss 10pF. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 35 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, 37.5A, 53A, 10uA, 0.008 Ohms, TO-220FP, TO-220F, 60V. ID (T=100°C): 37.5A. ID (T=25°C): 53A. Idss (max): 10uA. On-resistance Rds On: 0.008 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 60V. C(in): 3170pF. Cost): 1150pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 17nC, Low Crss 5.6pF. G-S Protection: no. Id(imp): 212A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 62W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 170 ns. Td(on): 40 ns. Technology: DMOS, QFET MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, ITO-220, 1, 600V, 7.6A, TO-220FP, TO-220F, 600V. Housing: PCB soldering. Housing: ITO-220. Housing (JEDEC standard): 1. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 7.6A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQPF8N60C. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.2 Ohms @ 3.75A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 45 ns. Switch-off delay tf[nsec.]: 170 ns. Ciss Gate Capacitance [pF]: 1255pF. Maximum dissipation Ptot [W]: 48W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Assembly/installation: PCB through-hole mounting. Td(off): 81 ns. Td(on): 16.5 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2V

N-channel transistor, 5.1A, 8A, 100uA, 1.29 Ohms, TO-220FP, TO-220F, 800V. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 100uA. On-resistance Rds On: 1.29 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 800V. C(in): 1580pF. Cost): 135pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 690 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 35nC, Low Crss 13pF. G-S Protection: no. Production date: 201432. Id(imp): 32A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 59W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 40 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 5.4A, 9A, 100uA, 0.7 Ohms, TO-220FP, TO-220F, 500V. ID (T=100°C): 5.4A. ID (T=25°C): 9A. Idss (max): 100uA. On-resistance Rds On: 0.7 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 500V. C(in): 790pF. Cost): 130pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 28nC, Low Crss 24pF. G-S Protection: no. Id(imp): 36A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 44W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 93 ns. Td(on): 18 ns. Technology: DMOS, QFET. Operating temperature: +55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 2.8A, 8A, 10uA, 1.12 Ohms, TO-220FP, TO-220F, 900V. ID (T=100°C): 2.8A. ID (T=25°C): 8A. Idss (max): 10uA. On-resistance Rds On: 1.12 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 900V. C(in): 2100pF. Cost): 175pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 40nC, Low Crss 14pF. G-S Protection: no. Id(imp): 32A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 68W. RoHS: yes. Spec info: Zero Gate Voltage Drain Current. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 50 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 250uA, 9.3 Ohms, SOT-223 ( TO-226 ), SOT-223, 600V. Idss (max): 250uA. On-resistance Rds On: 9.3 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 600V. C(in): 130pF. Cost): 19pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 190 ns. Type of transistor: MOSFET. G-S Protection: no. IDss (min): 25uA. Marking on the case: FQT1N60C. Number of terminals: 4. Pd (Power Dissipation, Max): 2.1W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 13 ns. Td(on): 7 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 0.55A, 0.85A, 10uA, 1.1 Ohms, SOT-223 ( TO-226 ), SOT-223, 200V. ID (T=100°C): 0.55A. ID (T=25°C): 0.85A. Idss (max): 10uA. On-resistance Rds On: 1.1 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 200V. C(in): 240pF. Cost): 36pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 90 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 3.4A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 2.2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 7 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1V

N-channel transistor, 10.9A, 17.2A, 10uA, 0.046 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 60V. ID (T=100°C): 10.9A. ID (T=25°C): 17.2A. Idss (max): 10uA. On-resistance Rds On: 0.046 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 60V. C(in): 480pF. Cost): 175pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 54 ns. Type of transistor: MOSFET. Function: Logic-Level. G-S Protection: no. Id(imp): 68.8A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. RoHS: yes. Spec info: low Gate Charge (typ 9.5nC). Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 10 ns. Technology: QFET, Enhancement mode power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V

N-channel transistor, 5A, 10A, 1mA, 0.72 Ohms, TO-220FP, TO-220FN, 600V. ID (T=100°C): 5A. ID (T=25°C): 10A. Idss (max): 1mA. On-resistance Rds On: 0.72 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FN. Voltage Vds(max): 600V. C(in): 1500pF. Cost): 170pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: High Speed ​​Switching. G-S Protection: yes. Id(imp): 30A. IDss (min): na. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 25 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 10A, 0.72 Ohms, TO-220FP, TO-220F, 600V. ID (T=25°C): 10A. On-resistance Rds On: 0.72 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Ifsm--30App. Id(imp): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 65W. Assembly/installation: PCB through-hole mounting

N-channel transistor, 12A, 12A, 0.32 Ohms, TO-220FP, TO-220F, 250V. ID (T=25°C): 12A. Idss (max): 12A. On-resistance Rds On: 0.32 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 250V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 36A. Pd (Power Dissipation, Max): 35W. Assembly/installation: PCB through-hole mounting. Technology: Power MOSFET

N-channel transistor, 12A, 12A, 0.32 Ohms, TO-220, TO-220, 250V. ID (T=25°C): 12A. Idss (max): 12A. On-resistance Rds On: 0.32 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 250V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 36A. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Technology: Power MOSFET

N-channel transistor, 75A, Other, Other, 1200V. Ic(T=100°C): 75A. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 1200V. C(in): 5300pF. CE diode: yes. Channel type: N. Function: ICRM 150A Tp=1ms. Germanium diode: no. Collector current: 100A. Ic(pulse): 150A. Note: 6x IGBT+ CE Diode. Marking on the case: FS75R12KE3G. Number of terminals: 35. Dimensions: 122x62x17.5mm. Pd (Power Dissipation, Max): 355W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 42us. Td(on): 26us. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 1.65V. Maximum saturation voltage VCE(sat): 2.15V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.5V. Gate/emitter voltage VGE(th)max.: 6.5V

N-channel transistor, 7A, 1mA, 1.54 Ohms, TO-220FP, TO-220FN, 900V. ID (T=25°C): 7A. Idss (max): 1mA. On-resistance Rds On: 1.54 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FN. Voltage Vds(max): 900V. C(in): 1380pF. Cost): 140pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: HIGH-SPEED SW.. G-S Protection: yes. Id(imp): 21A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Td(off): 180 ns. Td(on): 25 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/emitter voltage VGE(th)max.: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 1200A, Other, Other, 1200V. Ic(T=100°C): 1200A. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 1200V. C(in): 74pF. CE diode: yes. Channel type: N. Function: ICRM--Tp=1mS 2400A. Germanium diode: no. Collector current: 1790A. Ic(pulse): 2400A. Number of terminals: 7. Pd (Power Dissipation, Max): 7150W. RoHS: no. Spec info: VCE(sat) 1.7V (Ic=1200A, VGE=15V, 25°C). Assembly/installation: PCB through-hole mounting. Td(off): 0.92 ns. Td(on): 0.41 ns. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 1.7V. Threshold voltage Vf (max): 2.35V. Forward voltage Vf (min): 1.8V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.8V

N-channel transistor, 60A, 1uA, 5.3m Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 40V. ID (T=25°C): 60A. Idss (max): 1uA. On-resistance Rds On: 5.3m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 40V. C(in): 1800pF. Cost): 280pF. Channel type: N. Conditioning: roll. Conditioning unit: 2500. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Function: power switching, DC/DC converters. G-S Protection: no. Id(imp): 200A. IDss (min): n/a. Marking on the case: G60N04K. Number of terminals: 2. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 6.5 ns. Technology: ENHANCEMENT MODE POWER MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1.1V

N-channel transistor, 16A, 25A, 25uA, 0.036 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=100°C): 16A. ID (T=25°C): 25A. Idss (max): 25uA. On-resistance Rds On: 0.036 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 1700pF. Cost): 160pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 37 ns. Type of transistor: MOSFET. Function: Logic level gated transistor. G-S Protection: no. Id(imp): 80A. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 39W. RoHS: yes. Spec info: IDM--80A pulse. Assembly/installation: surface-mounted component (SMD). Td(off): 26 ns. Td(on): 9 ns. Technology: ENHANCEMENT MODE POWER MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V

N-channel transistor, TO-3P ( TO-218 SOT-93 ), TO-3P( GCE ), 600V. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P( GCE ). Collector/emitter voltage Vceo: 600V. CE diode: yes. Channel type: N. Function: 'Current Resonance Inverter Switching'. Germanium diode: no. Collector current: 30A. Ic(pulse): 100A. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: insulated gate bipolar transistor (IGBT). Assembly/installation: PCB through-hole mounting. Td(off): 400 ns. Td(on): 30 ns. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.1V