Quantity | excl. VAT | VAT incl. |
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1 - 4 | 1.07$ | 1.07$ |
5 - 9 | 1.02$ | 1.02$ |
10 - 24 | 0.99$ | 0.99$ |
25 - 49 | 0.97$ | 0.97$ |
50 - 99 | 0.94$ | 0.94$ |
100 - 108 | 0.91$ | 0.91$ |
Quantity | U.P | |
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1 - 4 | 1.07$ | 1.07$ |
5 - 9 | 1.02$ | 1.02$ |
10 - 24 | 0.99$ | 0.99$ |
25 - 49 | 0.97$ | 0.97$ |
50 - 99 | 0.94$ | 0.94$ |
100 - 108 | 0.91$ | 0.91$ |
N-channel transistor, 13A, 250uA, 0.09 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-252AA ), 55V - HUF75307D3S. N-channel transistor, 13A, 250uA, 0.09 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-252AA ), 55V. ID (T=25°C): 13A. Idss (max): 250uA. On-resistance Rds On: 0.09 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-252AA ). Voltage Vds(max): 55V. C(in): 250pF. Cost): 100pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 45 ns. Type of transistor: MOSFET. G-S Protection: no. IDss (min): 1uA. Marking on the case: 75307D. Number of terminals: 2. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 35 ns. Td(on): 7 ns. Technology: UltraFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer Harris. Quantity in stock updated on 08/06/2025, 01:25.
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