N-channel transistor, TO-3P ( TO-218 SOT-93 ), TO-3P( GCE ), 600V - GT30J322

Quantity	excl. VAT	VAT incl.
1 - 1	8.82$	8.82$
2 - 2	8.38$	8.38$
3 - 4	8.20$	8.20$
5 - 9	7.94$	7.94$
10 - 19	7.76$	7.76$
20 - 29	7.50$	7.50$
30 - 39	7.23$	7.23$

Quantity	U.P
1 - 1	8.82$	8.82$
2 - 2	8.38$	8.38$
3 - 4	8.20$	8.20$
5 - 9	7.94$	7.94$
10 - 19	7.76$	7.76$
20 - 29	7.50$	7.50$
30 - 39	7.23$	7.23$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 39

Set of 1

N-channel transistor, TO-3P ( TO-218 SOT-93 ), TO-3P( GCE ), 600V - GT30J322. N-channel transistor, TO-3P ( TO-218 SOT-93 ), TO-3P( GCE ), 600V. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P( GCE ). Collector/emitter voltage Vceo: 600V. CE diode: yes. Channel type: N. Function: 'Current Resonance Inverter Switching'. Germanium diode: no. Collector current: 30A. Ic(pulse): 100A. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: insulated gate bipolar transistor (IGBT). Assembly/installation: PCB through-hole mounting. Td(off): 400 ns. Td(on): 30 ns. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.1V. Original product from manufacturer Toshiba. Quantity in stock updated on 08/06/2025, 02:25.

Technical documentation

N-channel transistor, TO-3P ( TO-218 SOT-93 ), TO-3P( GCE ), 600V - GT30J322

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