Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 12.21$ | 12.21$ |
2 - 2 | 11.60$ | 11.60$ |
3 - 4 | 11.36$ | 11.36$ |
5 - 9 | 10.99$ | 10.99$ |
10 - 14 | 10.75$ | 10.75$ |
15 - 19 | 10.38$ | 10.38$ |
20 - 66 | 10.02$ | 10.02$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 12.21$ | 12.21$ |
2 - 2 | 11.60$ | 11.60$ |
3 - 4 | 11.36$ | 11.36$ |
5 - 9 | 10.99$ | 10.99$ |
10 - 14 | 10.75$ | 10.75$ |
15 - 19 | 10.38$ | 10.38$ |
20 - 66 | 10.02$ | 10.02$ |
N-channel transistor, 60A, TO-247, TO-247 ( AC ), 600V - HGTG30N60A4D. N-channel transistor, 60A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 30 ns. Function: SMPS Series IGBT with Anti-Parallel Hyperfast Diod. Germanium diode: no. Collector current: 75A. Ic(pulse): 240A. Marking on the case: 30N60A4D. Number of terminals: 3. Pd (Power Dissipation, Max): 463W. RoHS: yes. Spec info: 463W. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 7V. Original product from manufacturer Onsemi (fairchild). Quantity in stock updated on 14/05/2025, 03:25.
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