N-channel FETs and MOSFETs

N-channel transistor, 4.4A, 7A, 50uA, 0.85 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 4.4A. ID (T=25°C): 7A. Idss (max): 50uA. On-resistance Rds On: 0.85 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 1110pF. Cost): 135pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 480 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. G-S Protection: yes. Id(imp): 28A. IDss (min): 1uA. Marking on the case: P9NK60ZFP. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 19 ns. Technology: Zener-Protected SuperMESH™Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, 5A, 8A, 50uA, 1.1 Ohms, TO-220, TO-220AB, 900V. ID (T=100°C): 5A. ID (T=25°C): 8A. Idss (max): 50uA. On-resistance Rds On: 1.1 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 900V. C(in): 2115pF. Cost): 190pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 950 ns. Type of transistor: MOSFET. Function: switching circuits. G-S Protection: yes. Id(imp): 32A. IDss (min): 1uA. Marking on the case: P9NK90Z. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 22 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, 0.189A, 0.3A, 50uA, 13 Ohms, TO-92, TO-92Ammopak, 600V. ID (T=100°C): 0.189A. ID (T=25°C): 0.3A. Idss (max): 50uA. On-resistance Rds On: 13 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92Ammopak. Voltage Vds(max): 600V. C(in): 94pF. Cost): 17.6pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 135 ns. Type of transistor: MOSFET. Function: Zener-protected, ESD improved capability. G-S Protection: yes. Id(imp): 1.2A. IDss (min): 1uA. Marking on the case: 1NK60ZR. Pd (Power Dissipation, Max): 3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 13 ns. Td(on): 5.5 ns. Technology: SuperMESH™ Power MOSFET. Operating temperature: -50...+150°C. Gate/emitter voltage VGE(th) min.: 3V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V

N-channel transistor, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Channel type: N. Quantity per case: 2. Function: 2xN-CH 60V. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: STripFET™ Power MOSFET

N-channel transistor, 5.7A, 10A, 50uA, 0.65 Ohms, TO-247, TO-247, 600V. ID (T=100°C): 5.7A. ID (T=25°C): 10A. Idss (max): 50uA. On-resistance Rds On: 0.65 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 600V. C(in): 1370pF. Cost): 156pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: protected with zener diode. G-S Protection: yes. Id(imp): 36A. IDss (min): 1uA. Marking on the case: W10NK60Z. Number of terminals: 3. Pd (Power Dissipation, Max): 156W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 20 ns. Technology: SuperMESH ™Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, 6A, 9A, 50uA, 0.78 Ohms, TO-247, TO-247, 800V. ID (T=100°C): 6A. ID (T=25°C): 9A. Idss (max): 50uA. On-resistance Rds On: 0.78 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. C(in): 2180pF. Cost): 205pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 645 ns. Type of transistor: MOSFET. Function: protected with zener diode. G-S Protection: yes. Id(imp): 36A. IDss (min): 1uA. Marking on the case: W10NK80Z. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 30 ns. Technology: SuperMESH ™Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, PCB soldering, TO-247, 800V, 9A. Housing: PCB soldering. Housing: TO-247. Drain-source voltage Uds [V]: 800V. Drain Current Id [A] @ 25°C: 9A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: W10NK80Z. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.09 Ohms @ 4.5A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 65 ns. Ciss Gate Capacitance [pF]: 2180pF. Maximum dissipation Ptot [W]: 160W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 5.2A, 8.3A, 50uA, 1.1 Ohms, TO-247, TO-247, 1000V. ID (T=100°C): 5.2A. ID (T=25°C): 8.3A. Idss (max): 50uA. On-resistance Rds On: 1.1 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 1000V. C(in): 3500pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 560 ns. Type of transistor: MOSFET. Function: extremely high dv/dt capability, Switching applications. G-S Protection: yes. Id(imp): 33.2A. IDss (min): 1uA. Marking on the case: W11NK100Z. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Spec info: Gate source ESD (HBM-C=100pF, R=1.5KW) 6000V. Assembly/installation: PCB through-hole mounting. Td(off): 98 ns. Td(on): 27 ns. Technology: Zener - Protected SuperMESH™ PowerMOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, PCB soldering, TO-247, 1 kV, 8.3A. Housing: PCB soldering. Housing: TO-247. Drain-source voltage Uds [V]: 1 kV. Drain Current Id [A] @ 25°C: 8.3A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: W11NK100Z. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.38 Ohms @ 4.15A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 27 ns. Switch-off delay tf[nsec.]: 98 ns. Ciss Gate Capacitance [pF]: 3500pF. Maximum dissipation Ptot [W]: 230W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 5.8A, 9.2A, 50uA, 0.82 Ohms, TO-247, TO-247, 900V. ID (T=100°C): 5.8A. ID (T=25°C): 9.2A. Idss (max): 50uA. On-resistance Rds On: 0.82 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 900V. C(in): 3000pF. Cost): 240pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 584 ns. Type of transistor: MOSFET. Function: ZenerProtect. G-S Protection: yes. Id(imp): 36.8A. IDss (min): 1uA. Marking on the case: W11NK90Z. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: Gate source ESD (HBM-C=100pF, R=1.5KW) 6000V. Assembly/installation: PCB through-hole mounting. Td(off): 76 ns. Td(on): 30 ns. Technology: SuperMesh PpwerMOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, 6.6A, 10.5A, 50uA, 0.65 Ohms, TO-247, TO-247, 800V. ID (T=100°C): 6.6A. ID (T=25°C): 10.5A. Idss (max): 50uA. On-resistance Rds On: 0.65 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. C(in): 2620pF. Cost): 250pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 635 ns. Type of transistor: MOSFET. Function: Improved ESD capability. G-S Protection: yes. Id(imp): 42A. IDss (min): 1uA. Marking on the case: W12NK80Z. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. RoHS: yes. Spec info: 'EXTREMELY HIGH dv/dt CAPABILITY'. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 30 ns. Technology: SuperMESH™ power MOSFET transistor protected by zener diode. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, 7A, 11A, 50uA, 0.72 Ohms, TO-247, TO-247, 900V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 50uA. On-resistance Rds On: 0.72 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 900V. C(in): 3500pF. Cost): 280pF. Channel type: N. Trr Diode (Min.): 964ns. Type of transistor: MOSFET. Function: Improved ESD capability. Id(imp): 44A. IDss (min): 1uA. Marking on the case: W12NK90Z. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 88 ns. Td(on): 31 ns. Technology: SuperMESH™ power MOSFET transistor protected by zener diode. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Spec info: 'EXTREMELY HIGH dv/dt CAPABILITY'. Drain-source protection : yes. G-S Protection: yes

N-channel transistor, 8A, 13A, 50mA, 0.48 Ohms, TO-247, TO-247, 600V, 600V, 0.55 Ohms. ID (T=100°C): 8A. ID (T=25°C): 13A. Idss (max): 50mA. On-resistance Rds On: 0.48 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 600V. Drain-source voltage (Vds): 600V. On-resistance Rds On: 0.55 Ohms. Channel type: N. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. G-S Protection: yes. Id(imp): 40A. IDss (min): 1mA. Marking on the case: W13NK60Z. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Spec info: 'EXTREMELY HIGH dv/dt CAPABILITY'. Assembly/installation: PCB through-hole mounting. Td(off): 61 ns. Td(on): 22 ns. Technology: Zener-Protected SuperMESH]Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Type of transistor: MOSFET power transistor. Max drain current: 13A. Power: 150W

N-channel transistor, 7.6A, 14A, 50mA, 0.34 Ohms, TO-247, TO-247, 500V. ID (T=100°C): 7.6A. ID (T=25°C): 14A. Idss (max): 50mA. On-resistance Rds On: 0.34 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 500V. C(in): 2000pF. Cost): 238pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 470 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. G-S Protection: yes. Id(imp): 48A. IDss (min): 1mA. Marking on the case: W14NK50Z. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Spec info: 'EXTREMELY HIGH dv/dt CAPABILITY'. Assembly/installation: PCB through-hole mounting. Td(off): 54 ns. Td(on): 24 ns. Technology: Zener-Protected SuperMESH Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, 900V, 0.55 Ohms, TO-247. Drain-source voltage (Vds): 900V. On-resistance Rds On: 0.55 Ohms. Housing: TO-247. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 15A. Power: 350W

N-channel transistor, 12A, 19A, 50mA, 0.34 Ohms, TO-247, TO-247, 800V. ID (T=100°C): 12A. ID (T=25°C): 19A. Idss (max): 50mA. On-resistance Rds On: 0.34 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. C(in): 6100pF. Cost): 500pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 920 ns. Type of transistor: MOSFET. Function: 'EXTREMELY HIGH dv/dt CAPABILITY'. G-S Protection: yes. Id(imp): 76A. IDss (min): 1uA. Marking on the case: W18NK80Z. Number of terminals: 3. Pd (Power Dissipation, Max): 350W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 46 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, 10.71A, 17A, 100nA, 0.25 Ohms, TO-247, TO-247, 800V. ID (T=100°C): 10.71A. ID (T=25°C): 17A. Idss (max): 100nA. On-resistance Rds On: 0.25 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. C(in): 1630pF. Cost): 750pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : Zener diode. Quantity per case: 1. Type of transistor: MOSFET. Function: switching circuits. G-S Protection: no. Id(imp): 68A. IDss (min): 10nA. Marking on the case: 18NM80. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 190W. RoHS: yes. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. Assembly/installation: PCB through-hole mounting. Technology: MDmesh PpwerMOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, PCB soldering, TO-247, 30, 500V, 17A, 0.23 Ohms, TO-247, 500V. Housing: PCB soldering. Housing: TO-247. Housing (JEDEC standard): 30. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 17A. On-resistance Rds On: 0.23 Ohms. Housing (according to data sheet): TO-247. Voltage Vds(max): 500V. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: W20NK50Z. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.27 Ohms @ 8.5A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 28 ns. Switch-off delay tf[nsec.]: 70 ns. Ciss Gate Capacitance [pF]: 2600pF. Maximum dissipation Ptot [W]: 190W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Pd (Power Dissipation, Max): 190W. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 28 ns. Technology: SuperMESH™ Power MOSFET Zener-protected. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, PCB soldering, TO-247, 500V, 20A. Housing: PCB soldering. Housing: TO-247. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 20A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: W20NM50FD. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.25 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 22 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 1380pF. Maximum dissipation Ptot [W]: 214W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

N-channel transistor, 12.6A, 20A, 100uA, 0.26 Ohms, TO-247, TO-247, 600V. ID (T=100°C): 12.6A. ID (T=25°C): 20A. Idss (max): 100uA. On-resistance Rds On: 0.26 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 600V. C(in): 1450pF. Cost): 350pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 510 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 80A. IDss (min): 1uA. Marking on the case: W20NM60. Number of terminals: 3. Pd (Power Dissipation, Max): 214W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 6 ns. Td(on): 25 ns. Technology: MDmesh PpwerMOSFET. Operating temperature: -65...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 12.6A, 20A, 100uA, 0.135 Ohms, TO-247, TO-247, 600V. ID (T=100°C): 12.6A. ID (T=25°C): 20A. Idss (max): 100uA. On-resistance Rds On: 0.135 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 600V. C(in): 1800pF. Cost): 115pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: switching circuits. G-S Protection: no. Id(imp): 80A. IDss (min): 1uA. Marking on the case: 26NM60N. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. RoHS: yes. Spec info: Low input capacitance and gate charge. Weight: 4.51g. Assembly/installation: PCB through-hole mounting. Td(off): 13 ns. Td(on): 85 ns. Technology: MDmesh PpwerMOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 13A, 20A, 100uA, 0.15 Ohms, TO-247, TO-247, 650V. ID (T=100°C): 13A. ID (T=25°C): 20A. Idss (max): 100uA. On-resistance Rds On: 0.15 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 650V. C(in): 1440pF. Cost): 60pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 384 ns. Function: switching circuits. G-S Protection: yes. Id(imp): 80A. IDss (min): 1uA. Marking on the case: 28N65M2. Pd (Power Dissipation, Max): 170W. Assembly/installation: PCB through-hole mounting. Td(off): 59 ns. Td(on): 13.4 ns. Technology: MDmesh™ M2 Power MOSFETs. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 21A, 34A, 10uA, 0.62 Ohms, TO-247, TO-247, 200V. ID (T=100°C): 21A. ID (T=25°C): 34A. Idss (max): 10uA. On-resistance Rds On: 0.62 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 200V. C(in): 2400pF. Cost): 650pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 290 ns. Type of transistor: MOSFET. Function: PowerMESH™ MOSFET. G-S Protection: no. Id(imp): 136A. IDss (min): 1uA. Marking on the case: W34NB20. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 180W. RoHS: yes. Spec info: Switch Mode Power Supplies SMPS, DC-AC Converters. Assembly/installation: PCB through-hole mounting. Td(off): 17 ns. Td(on): 30 ns. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 4 v

N-channel transistor, 22A, 35A, 35A, 0.075 Ohms, TO-247, TO-247, 600V. ID (T=100°C): 22A. ID (T=25°C): 35A. Idss (max): 35A. On-resistance Rds On: 0.075 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 600V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Idm--140Ap(pulsed). Pd (Power Dissipation, Max): 255W. Assembly/installation: PCB through-hole mounting. Technology: MDmesh II

N-channel transistor, 22A, 35A, 100uA, 0.075 Ohms, TO-247, TO-247, 600V. ID (T=100°C): 22A. ID (T=25°C): 35A. Idss (max): 100uA. On-resistance Rds On: 0.075 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 600V. C(in): 4300pF. Cost): 250pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 190 ns. Type of transistor: MOSFET. Function: Low input capacitance and gate charge. G-S Protection: no. Id(imp): 140A. IDss (min): 10uA. Marking on the case: 43NM60ND. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 255W. RoHS: yes. Spec info: Low gate input resistance. Assembly/installation: PCB through-hole mounting. Td(off): 120ns. Td(on): 30 ns. Technology: MDmesh II. Gate/source voltage Vgs: 25V. Vgs(th) min.: 3V