FET and MOSFET transistors

P-channel transistor, PCB soldering (SMD), SOT-223, -60V, -1.9A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: -60V. Drain Current Id [A] @ 25°C: -1.9A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BSP171P. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.3 Ohms @ -1.9A. Gate breakdown voltage Ugs [V]: -2V. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 276 ns. Ciss Gate Capacitance [pF]: 460pF. Maximum dissipation Ptot [W]: 1.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, SOT223. Housing: SOT223. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Series: yes. Polarity: DMOS P. Vdss (Drain to Source Voltage): -30V. Id @ Tc=25°C (Continuous Drain Current): 3A. Rds On (Max) @ Id, Vgs: 0.25 Ohms / -1A / -10V. Vgs(th) (Max) @ Id: 3. Qg (Total Gate Charge, Max @ Vgs): BSP250.115. Gate/source voltage Vgs max: -20V. Pd (Power Dissipation, Max): 5W. Operating temperature: 0.25 Ohms @ -1A. Mounting Type: SMD. Features: 140 ns. Information: 250pF. MSL: 1.65W

P-channel transistor, PCB soldering (SMD), SOT-223, -100V, -0.68A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -0.68A. RoHS: no. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BSP316. Drain current through resistor Rds [Ohm] @ Ids [A]: 2.2 Ohms @ -0.61A. Gate breakdown voltage Ugs [V]: -2V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 110 ns. Ciss Gate Capacitance [pF]: 370pF. Maximum dissipation Ptot [W]: 1.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SOT-223, -250V, -0.26A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: -250V. Drain Current Id [A] @ 25°C: -0.26A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BSP92P. Drain current through resistor Rds [Ohm] @ Ids [A]: 12 Ohms @ -0.26A. Gate breakdown voltage Ugs [V]: -2V. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 101 ns. Ciss Gate Capacitance [pF]: 104pF. Maximum dissipation Ptot [W]: 1.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, SOT23. Housing: SOT23. Polarity: MOSFET P. Vdss (Drain to Source Voltage): -60V. Id @ Tc=25°C (Continuous Drain Current): 330mA. Gate/source voltage Vgs max: -20V. Pd (Power Dissipation, Max): 0.36W. Mounting Type: SMD. MSL: 1

P-channel transistor, 130mA, 46.4k Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. ID (T=25°C): 130mA. Idss (max): 46.4k Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 50V. C(in): 25pF. Cost): 15pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: Direct interface to C-MOS, TTL, etc. G-S Protection: no. Id(imp): 520mA. ID (T=100°C): 75mA. IDss (min): 10uA. Marking on the case: 11W. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. On-resistance Rds On: 6 Ohms. RoHS: yes. Spec info: screen printing/SMD code 11W. Assembly/installation: surface-mounted component (SMD). Td(off): 7 ns. Td(on): 3 ns. Technology: 'Enhancement mode vertical D-MOS transistor'. Operating temperature: -65...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 0.8V

P-channel transistor, PCB soldering (SMD), SOT-23, TO-236AB, -50V, -0.13A. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Drain-source voltage Uds [V]: -50V. Drain Current Id [A] @ 25°C: -0.13A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 13. Drain current through resistor Rds [Ohm] @ Ids [A]: 10 Ohms @ -0.13A. Gate breakdown voltage Ugs [V]: -2V. Switch-on time ton [nsec.]: 3 ns. Switch-off delay tf[nsec.]: 7 ns. Ciss Gate Capacitance [pF]: 45pF. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SOT-23, TO-236AB, -50V, -0.18A. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Drain-source voltage Uds [V]: -50V. Drain Current Id [A] @ 25°C: -0.18A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: VS. Drain current through resistor Rds [Ohm] @ Ids [A]: 4.5 Ohms @ -0.1A. Gate breakdown voltage Ugs [V]: -2.1V. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 48 ns. Ciss Gate Capacitance [pF]: 36pF. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SOT-23, TO-236AB, -50V, -0.13A. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Drain-source voltage Uds [V]: -50V. Drain Current Id [A] @ 25°C: -0.13A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: Pd (Power Dissipation, Max). Drain current through resistor Rds [Ohm] @ Ids [A]: 10 Ohms @ -0.13A. Gate breakdown voltage Ugs [V]: -2V. Switch-on time ton [nsec.]: 3.6 ns. Switch-off delay tf[nsec.]: 12 ns. Ciss Gate Capacitance [pF]: 36pF. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 8A, 10mA, TO-3 ( TO-204 ), TO-3, 200V. ID (T=25°C): 8A. Idss (max): 10mA. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Voltage Vds(max): 200V. C(in): 734pF. Cost): 300pF. Channel type: P. Drain-source protection : no. Quantity per case: 1. Type of transistor: MOSFET. Function: AUDIO POWER Amplifier MOSFET. G-S Protection: no. Number of terminals: 2. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) BUZ901. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 120ns. Technology: P-Channel MOSFET Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 14V. Gate/source voltage (off) max.: 1.5V. Gate/source voltage (off) min.: 0.15V

P-channel transistor, 12A, 1uA, SO, SO-8, 30 v. ID (T=25°C): 12A. Idss (max): 1uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 1802pF. Cost): 415pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 30 ns. Various: Fast Switching Speed, Low Input/Output Leakage. Type of transistor: MOSFET. Function: Low On-Resistance, Low Gate Threshold Voltage, Low Input Capacitance. G-S Protection: no. Id(imp): 80A. ID (T=100°C): 9A. Marking on the case: P3020LS. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.0116 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 46 ns. Td(on): 5.1 ns. Technology: SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET. Operating temperature: -55...+150°C. Vgs(th) max.: 2V. Vgs(th) min.: 1V

P-channel transistor, 16A, 10mA, TO-264 ( TOP-3L ), TO-264, 200V. ID (T=25°C): 16A. Idss (max): 10mA. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Voltage Vds(max): 200V. Pinout: 1 - G, 2 - S, 3 - D. C(in): 1850pF. Cost): 850pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Various: HI-FI Power Amplifier. Type of transistor: MOSFET. Function: AUDIO POWER Amplifier MOSFET. G-S Protection: no. Number of terminals: 3. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: complementary transistor (pair) ECW20N20. Assembly/installation: PCB through-hole mounting. Td(off): 105 ns. Td(on): 150 ns. Technology: P-Channel MOSFET Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 14V. Gate/source voltage (off) max.: 1.5V. Gate/source voltage (off) min.: 0.1V

P-channel transistor, 8A, 10mA, TO-247, TO-247, 200V. ID (T=25°C): 8A. Idss (max): 10mA. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 200V. Pinout: 1 - G, 2 - S, 3 - D. C(in): 500pF. Cost): 300pF. Channel type: P. Drain-source protection : no. Quantity per case: 1. Various: HI-FI Power Amplifier. Type of transistor: MOSFET. Function: AUDIO POWER Amplifier MOSFET. G-S Protection: no. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) ECX10N20. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 100 ns. Technology: P-Channel MOSFET Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 14V. Gate/source voltage (off) max.: 1.5V. Gate/source voltage (off) min.: 0.15V

P-channel transistor, 4.3A, 1uA, TSOP, SUPERSOT-6, 35V. ID (T=25°C): 4.3A. Idss (max): 1uA. Housing: TSOP. Housing (according to data sheet): SUPERSOT-6. Voltage Vds(max): 35V. C(in): 530pF. Cost): 105pF. Channel type: P. Conditioning: roll. Conditioning unit: 3000. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 16 ns. Type of transistor: MOSFET. Function: Inverters, Power Supplies. G-S Protection: no. Id(imp): 20A. IDss (min): 1uA. Note: screen printing/SMD code 365P. Marking on the case: 365 P. Number of terminals: 6. Pd (Power Dissipation, Max): 1.6W. On-resistance Rds On: 0.045 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 7 ns. Technology: PowerTrench® MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V

P-channel transistor, PCB soldering (SMD), SOT-23/6, -20V, -4.5A. Housing: PCB soldering (SMD). Housing: SOT-23/6. Drain-source voltage Uds [V]: -20V. Drain Current Id [A] @ 25°C: -4.5A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 6. Manufacturer's marking: .638. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.039 Ohms @ -4.5A. Gate breakdown voltage Ugs [V]: -1.5V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 33 ns. Ciss Gate Capacitance [pF]: 1160pF. Maximum dissipation Ptot [W]: 1.6W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 4A, 10uA, TSOP, SUPERSOT-6, 20V. ID (T=25°C): 4A. Idss (max): 10uA. Housing: TSOP. Housing (according to data sheet): SUPERSOT-6. Voltage Vds(max): 20V. C(in): 700pF. Cost): 110pF. Channel type: P. Conditioning: roll. Conditioning unit: 3000. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: Load Switch, Battery Protection. G-S Protection: yes. Id(imp): 20A. IDss (min): 1uA. Note: screen printing/SMD code 642. Marking on the case: 642. Number of terminals: 6. Pd (Power Dissipation, Max): 1.6W. On-resistance Rds On: 0.045 Ohms. RoHS: yes. Spec info: Low Input Charge. Assembly/installation: surface-mounted component (SMD). Td(off): 120ns. Td(on): 6 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1.5V. Vgs(th) min.: 0.4V

P-channel transistor, 4A, 1uA, SSOT, SUPERSOT-6, 20V. ID (T=25°C): 4A. Idss (max): 1uA. Housing: SSOT. Housing (according to data sheet): SUPERSOT-6. Voltage Vds(max): 20V. C(in): 630pF. Cost): 160pF. Channel type: P. Conditioning: roll. Conditioning unit: 3000. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 17 ns. Type of transistor: MOSFET. Function: Load Switch, Battery Protection. G-S Protection: no. Id(imp): 20A. IDss (min): 250uA. Note: screen printing/SMD code FDC642P. Marking on the case: FDC642P. Number of terminals: 6. Pd (Power Dissipation, Max): 1.2W. On-resistance Rds On: 0.0525 Ohms. RoHS: yes. Spec info: Faible charge de grille (6.9nC typique). Assembly/installation: surface-mounted component (SMD). Td(off): 23.5 ns. Td(on): 23 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1.5V. Vgs(th) min.: 0.4V

P-channel transistor, 58A, 1uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 40V. ID (T=25°C): 58A. Idss (max): 1uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 40V. C(in): 2085pF. Cost): 360pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Function: 'High performance trench technology'. G-S Protection: no. Id(imp): 100A. ID (T=100°C): 50A. Note: Logic level gated transistor. Marking on the case: FDD4141. Number of terminals: 2. Pd (Power Dissipation, Max): 69W. On-resistance Rds On: 12.3m Ohms. RoHS: yes. Spec info: extremely low RDS(on) resistance. Assembly/installation: surface-mounted component (SMD). Td(off): 38 ns. Td(on): 10 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

P-channel transistor, 15A, 1uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=25°C): 15A. Idss (max): 1uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. RoHS: yes. C(in): 759pF. Cost): 90pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: DC/DC voltage converter. G-S Protection: no. Id(imp): 45A. ID (T=100°C): 15A. IDss (min): 1uA. Note: Logic level gated transistor. Marking on the case: FDD5614P. Number of terminals: 2. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.076 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 7 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

P-channel transistor, 40A, 1uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 30 v. ID (T=25°C): 40A. Idss (max): 1uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 30 v. C(in): 1715pF. Cost): 440pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 26 ns. Type of transistor: MOSFET. Function: DC/DC voltage converter. G-S Protection: no. Id(imp): 100A. ID (T=100°C): 11A. Note: Logic level gated transistor. Number of terminals: 2. Pd (Power Dissipation, Max): 52W. On-resistance Rds On: 0.014 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 43 ns. Td(on): 17 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

P-channel transistor, PCB soldering (SMD), SOT-23, -12V, -2.6A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -12V. Drain Current Id [A] @ 25°C: -2.6A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 306. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.04 Ohms @ -2.6A. Gate breakdown voltage Ugs [V]: -1.5V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 61 ns. Ciss Gate Capacitance [pF]: 1138pF. Maximum dissipation Ptot [W]: 0.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 1.6A, 0.1uA, SOT-23 ( TO-236 ), SOT-23, 20V. ID (T=25°C): 1.6A. Idss (max): 0.1uA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Voltage Vds(max): 20V. C(in): 451pF. Cost): 75pF. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: Battery management. Id(imp): 5A. IDss (min): n/a. Note: screen printing/SMD code 338. Pd (Power Dissipation, Max): 0.5W. On-resistance Rds On: 0.088 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 16 ns. Td(on): 10 ns. Technology: Specified PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1.5V. Vgs(th) min.: 0.4V

P-channel transistor, 1.5A, 10uA, SOT-23 ( TO-236 ), SOT-23, 30 v. ID (T=25°C): 1.5A. Idss: 10uA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Voltage Vds(max): 30 v. C(in): 182pF. Cost): 56pF. Channel type: P. Conditioning: roll. Conditioning unit: 3000. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: Single P-Channel, Logic Level. G-S Protection: no. Id(imp): 5A. IDss (min): 1uA. Marking on the case: 358. Pd (Power Dissipation, Max): 0.5W. On-resistance Rds On: 0.105 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

P-channel transistor, PCB soldering (SMD), SOT-23, -60V, -1.25A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -60V. Drain Current Id [A] @ 25°C: -1.25A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 618. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.185 Ohms @ -1A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 6.5 ns. Switch-off delay tf[nsec.]: 16.5 ns. Ciss Gate Capacitance [pF]: 430pF. Maximum dissipation Ptot [W]: 0.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 8.8A, 1uA, SO, SO-8, 30 v. ID (T=25°C): 8.8A. Idss (max): 1uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 1604pF. Cost): 408pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 50A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.015 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 42 ns. Td(on): 13 ns. Technology: P-channel. Gate/source voltage Vgs: 25V. Vgs(th) min.: 1V