FET and MOSFET transistors

P-channel transistor, 13A, 250uA, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 150V. ID (T=25°C): 13A. Idss (max): 250uA. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 150V. C(in): 860pF. Cost): 220pF. Channel type: P. Trr Diode (Min.): 160 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 44A. ID (T=100°C): 9A. IDss (min): 25uA. Pd (Power Dissipation, Max): 110W. On-resistance Rds On: 0.29 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 53 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

P-channel transistor, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Function: 2xP-CH 20V. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Quantity per case: 2

P-channel transistor, PCB soldering (SMD), SO8, -20V, -5.3A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: -20V. Drain Current Id [A] @ 25°C: -5.3A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7204. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.006 Ohms @ -5.3A. Gate breakdown voltage Ugs [V]: -2.5V. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 150 ns. Ciss Gate Capacitance [pF]: 860pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 4.6A, 5uA, SO, SO-8, 30 v. ID (T=25°C): 4.6A. Idss (max): 5uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 870pF. Cost): 720pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 15A. ID (T=100°C): 3.7A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.07 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 97 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Quantity per case: 1. G-S Protection: no

P-channel transistor, PCB soldering (SMD), SO8, -12V, -6A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: -12V. Drain Current Id [A] @ 25°C: -6A. RoHS: no. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7233. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.02 Ohms @ -9.5A. Gate breakdown voltage Ugs [V]: -1.5V. Switch-on time ton [nsec.]: 26 ns. Switch-off delay tf[nsec.]: 77 ns. Ciss Gate Capacitance [pF]: 6000pF. Maximum dissipation Ptot [W]: 1.6W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SO8, -12V, -9.5A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: -12V. Drain Current Id [A] @ 25°C: -9.5A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7233. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.02 Ohms @ -9.5A. Gate breakdown voltage Ugs [V]: -1.5V. Switch-on time ton [nsec.]: 26 ns. Switch-off delay tf[nsec.]: 77 ns. Ciss Gate Capacitance [pF]: 6000pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Function: P-channel MOSFET transistor. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Quantity per case: 2

P-channel transistor, PCB soldering (SMD), SO8, -20V, -4.7A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: -20V. Drain Current Id [A] @ 25°C: -4.7A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7304. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.09 Ohms @ -2.2A. Gate breakdown voltage Ugs [V]: -1.5V. Switch-on time ton [nsec.]: 8.4 ns. Switch-off delay tf[nsec.]: 51 ns. Ciss Gate Capacitance [pF]: 610pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SO8, -30V, -3.6A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -3.6A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7306. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.01 Ohms @ -1.8A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 440pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Function: P-channel MOSFET transistor. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Quantity per case: 2

P-channel transistor, PCB soldering (SMD), SO8, -20V, -5.3A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: -20V. Drain Current Id [A] @ 25°C: -5.3A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7314. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.058 Ohms @ -2.9A. Gate breakdown voltage Ugs [V]: -1.5V. Switch-on time ton [nsec.]: 22 ns. Switch-off delay tf[nsec.]: 63 ns. Ciss Gate Capacitance [pF]: 780pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Quantity per case: 2. Function: IDM--30Ap

P-channel transistor, PCB soldering (SMD), SO8, -30V, -3.9A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -3.9A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7316. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.098 Ohms @ -3.6A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 19 ns. Switch-off delay tf[nsec.]: 51 ns. Ciss Gate Capacitance [pF]: 710pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 8A, SO, SO-8, 30 v. ID (T=25°C): 8A. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Id(imp): 32A. ID (T=100°C): 6.4A. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. On-resistance Rds On: 0.017 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Type of transistor: PNP & PNP. Quantity per case: 2. Function: Dual P-channel Mosfet transistor. Ultra-low RDS on-resistance

P-channel transistor, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Channel type: P. Equivalents: IRF7342PBF. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Quantity per case: 2. Function: IDM--27Ap

P-channel transistor, PCB soldering (SMD), SO8, -55V, -3.4A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: -55V. Drain Current Id [A] @ 25°C: -3.4A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7342. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.105 Ohms @ -3.4A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 22 ns. Switch-off delay tf[nsec.]: 64 ns. Ciss Gate Capacitance [pF]: 690pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SO8, -55V, -3.4A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: -55V. Drain Current Id [A] @ 25°C: -3.4A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7342. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.105 Ohms @ -3.4A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 22 ns. Switch-off delay tf[nsec.]: 64 ns. Ciss Gate Capacitance [pF]: 690pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 10A, 25uA, SO, SO-8, 30 v. ID (T=25°C): 10A. Idss (max): 25uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 1700pF. Cost): 890pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 56 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 45A. ID (T=100°C): 7.1A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.02 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 59 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Vgs(th) max.: 2.04V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no

P-channel transistor, PCB soldering (SMD), SO8, -30V, -10A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -10A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7416. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.02 Ohms @ -5.6A. Gate breakdown voltage Ugs [V]: -2.04V. Switch-on time ton [nsec.]: 18 ns. Switch-off delay tf[nsec.]: 59 ns. Ciss Gate Capacitance [pF]: 1700pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SO8, -30V, -11A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -11A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7424. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0035 Ohms @ -11A. Gate breakdown voltage Ugs [V]: -2.04V. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 150 ns. Ciss Gate Capacitance [pF]: 4030pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 15A, 25uA, SO, SO-8, 20V. ID (T=25°C): 15A. Idss (max): 25uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 20V. C(in): 7980pF. Cost): 1480pF. Channel type: P. Id(imp): 60A. ID (T=100°C): 12A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.082 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 230 ns. Td(on): 13 ns. Gate/source voltage Vgs: 12V. Vgs(th) max.: 1.2V. Vgs(th) min.: 0.45V. Drain-source protection : yes. G-S Protection: no

P-channel transistor, 11A, 25uA, 250uA, TO-3 ( TO-204 ), TO-3 ( TO-204AA ), 200V. ID (T=25°C): 11A. Idss: 25uA. Idss (max): 250uA. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204AA ). Voltage Vds(max): 200V. C(in): 1200pF. Cost): 570pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.): 270ms. Type of transistor: MOSFET. Id(imp): 44A. ID (T=100°C): 7A. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 50M Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 85 ns. Td(on): 38 ns. Technology: V-MOS. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Spec info: HEXFET. G-S Protection: no

P-channel transistor, 20A, 150uA, SO, SO-8, 30 v. ID (T=25°C): 20A. Idss (max): 150uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: P. Type of transistor: MOSFET. Function: laptop switching circuits. Id(imp): 160A. ID (T=100°C): 7.1A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.039 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 65 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.4V. Vgs(th) min.: 1.3V. Quantity per case: 1. Technology: HEXFET Power MOSFET transistor. Drain-source protection : no. G-S Protection: yes

P-channel transistor, PCB soldering, TO-220AB, -100V, -4A, TO-220, TO-220AB, 100V, 1. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -4A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. Housing (JEDEC standard): 1. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF9510PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.2 Ohms @ -2.4A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 200pF. Maximum dissipation Ptot [W]: 43W. Td(on): 10 ns. Technology: V-MOS. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 6.8A, 500uA, TO-220, TO-220AB, 100V. ID (T=25°C): 6.8A. Idss (max): 500uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 390pF. Cost): 170pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.): 98 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 27A. ID (T=100°C): 4.8A. IDss (min): 100uA. Pd (Power Dissipation, Max): 60W. On-resistance Rds On: 0.6 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 9.6 ns. Technology: HEXFET Power-MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no