P-channel transistor, 130mA, 46.4k Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V - BSS84

Quantity (Set of 10)	excl. VAT	VAT incl.
1 - 1	0.41$	0.41$
2 - 2	0.39$	0.39$
3 - 4	0.37$	0.37$
5 - 9	0.35$	0.35$
10 - 24	0.33$	0.33$
25 - 49	0.31$	0.31$
50 - 4986	0.29$	0.29$

Quantity (Set of 10)	U.P
1 - 1	0.41$	0.41$
2 - 2	0.39$	0.39$
3 - 4	0.37$	0.37$
5 - 9	0.35$	0.35$
10 - 24	0.33$	0.33$
25 - 49	0.31$	0.31$
50 - 4986	0.29$	0.29$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 49855

Set of 10

P-channel transistor, 130mA, 46.4k Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V - BSS84. P-channel transistor, 130mA, 46.4k Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. ID (T=25°C): 130mA. Idss (max): 46.4k Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 50V. C(in): 25pF. Cost): 15pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: Direct interface to C-MOS, TTL, etc. Id(imp): 520mA. ID (T=100°C): 75mA. IDss (min): 10uA. Marking on the case: 11W. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. On-resistance Rds On: 6 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 7 ns. Td(on): 3 ns. Technology: 'Enhancement mode vertical D-MOS transistor'. Operating temperature: -65...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 0.8V. Spec info: screen printing/SMD code 11W. G-S Protection: no. Quantity in stock updated on 14/04/2025, 15:25.

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