P-channel transistor, 16A, 10mA, TO-264 ( TOP-3L ), TO-264, 200V - ECW20P20
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 21.89$ | 21.89$ |
| 2 - 2 | 20.80$ | 20.80$ |
| 3 - 4 | 19.70$ | 19.70$ |
| 5 - 9 | 18.61$ | 18.61$ |
| 10 - 14 | 18.17$ | 18.17$ |
| 15 - 19 | 17.73$ | 17.73$ |
| 20 - 32 | 17.08$ | 17.08$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 1 | 21.89$ | 21.89$ |
| 2 - 2 | 20.80$ | 20.80$ |
| 3 - 4 | 19.70$ | 19.70$ |
| 5 - 9 | 18.61$ | 18.61$ |
| 10 - 14 | 18.17$ | 18.17$ |
| 15 - 19 | 17.73$ | 17.73$ |
| 20 - 32 | 17.08$ | 17.08$ |
P-channel transistor, 16A, 10mA, TO-264 ( TOP-3L ), TO-264, 200V - ECW20P20. P-channel transistor, 16A, 10mA, TO-264 ( TOP-3L ), TO-264, 200V. ID (T=25°C): 16A. Idss (max): 10mA. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Voltage Vds(max): 200V. Pinout: 1 - G, 2 - S, 3 - D. C(in): 1850pF. Cost): 850pF. Channel type: P. Quantity per case: 1. Various: HI-FI Power Amplifier. Type of transistor: MOSFET. Function: AUDIO POWER Amplifier MOSFET. Number of terminals: 3. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 105 ns. Td(on): 150 ns. Technology: P-Channel MOSFET Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 14V. Gate/source voltage (off) max.: 1.5V. Gate/source voltage (off) min.: 0.1V. Spec info: complementary transistor (pair) ECW20N20. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 14/04/2025, 16:25.
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