FET and MOSFET transistors

P-channel transistor, 9A, 10uA, SO, SO-8, 30 v. ID (T=25°C): 9A. Idss (max): 10uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 2010pF. Cost): 590pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 36ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 50A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.015 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 100 ns. Td(on): 12 ns. Technology: P-channel. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1V

P-channel transistor, 8.8A, 1uA, SO, SO-8, 30 v. ID (T=25°C): 8.8A. Idss (max): 1uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 1385pF. Cost): 275pF. Channel type: P. Drain-source protection : no. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Function: battery charge controller. G-S Protection: yes. Id(imp): 50A. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.016 Ohms. RoHS: yes. Spec info: HBM ESD protection level of 3.8kV. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 10 ns. Technology: P-channel. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

P-channel transistor, SO, SO-8, 30 v. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: P. Quantity per case: 2. Function: Dual P-Channel MOSFET. PowerTrench. 30V. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Spec info: td(on) 13ns, td(off) 48ns. Assembly/installation: surface-mounted component (SMD). Technology: P-channel

P-channel transistor, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Channel type: P. Quantity per case: 2. Number of terminals: 8. Pd (Power Dissipation, Max): 1.6W. Spec info: td(on) 12ns, td(off) 68ns. Assembly/installation: surface-mounted component (SMD). Technology: P-channel

P-channel transistor, PCB soldering (SMD), SO8, -30V, -11A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -11A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.013 Ohms @ -11A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 200 ns. Ciss Gate Capacitance [pF]: 2470pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 13A, 1uA, SO, SO-8, 30 v. ID (T=25°C): 13A. Idss (max): 1uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 2890pF. Cost): 500pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 40 ns. Type of transistor: MOSFET. G-S Protection: yes. Id(imp): 65A. ID (T=100°C): n/a. IDss (min): n/a. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 7.7m Ohms. RoHS: yes. Spec info: Zero Gate Voltage Drain Current. Assembly/installation: surface-mounted component (SMD). Td(off): 210 ns. Td(on): 13 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

P-channel transistor, 5.3A, 100nA, SO, SO-8, 30 v. ID (T=25°C): 5.3A. Idss (max): 100nA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 528pF. Cost): 132pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 50A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.042 Ohms. RoHS: yes. Spec info: VGS(th) 1V...3V, ID=250uA. Assembly/installation: surface-mounted component (SMD). Td(off): 14 ns. Td(on): 7 ns. Technology: P-Channel PowerTrench MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) min.: 1V

P-channel transistor, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Channel type: P. Quantity per case: 2. Function: P-channel MOSFET transistor. Number of terminals: 8. RoHS: yes. Spec info: 0.075 Ohms. Assembly/installation: surface-mounted component (SMD)

P-channel transistor, PCB soldering (SMD), SOT-23, -25V, -0.46A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -25V. Drain Current Id [A] @ 25°C: -0.46A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 304. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.87 Ohms @ -0.5A. Gate breakdown voltage Ugs [V]: -1.5V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 110 ns. Ciss Gate Capacitance [pF]: 63pF. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 36A, 100uA, TO-3P ( TO-218 SOT-93 ), TO-3P, 150V. ID (T=25°C): 36A. Idss (max): 100uA. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 150V. C(in): 2550pF. Cost): 710pF. Channel type: P. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 198 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 144A. ID (T=100°C): 25.5A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 294W. On-resistance Rds On: 0.076 Ohms. RoHS: yes. Spec info: Low gate charge (typical 81nC). Assembly/installation: PCB through-hole mounting. Td(off): 155 ns. Td(on): 50 ns. Technology: DMOS Technology. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

P-channel transistor, 27A, 10uA, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 60V. ID (T=25°C): 27A. Idss (max): 10uA. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 60V. C(in): 1100pF. Cost): 510pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 105 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 102A. ID (T=100°C): 19.1A. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 120W. On-resistance Rds On: 0.055 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 18 ns. Technology: DMOS, QFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) min.: 2V

P-channel transistor, 2.7A, 10uA, TO-220, TO220, 500V. ID (T=25°C): 2.7A. Idss (max): 10uA. Housing: TO-220. Housing (according to data sheet): TO220. Voltage Vds(max): 500V. C(in): 510pF. Cost): 70pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 10.8A. ID (T=100°C): 1.71A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 85W. On-resistance Rds On: 3.9 Ohms. RoHS: yes. Spec info: faible charge de porte (typ 18nC). Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 35 ns. Technology: QFET, Enhancement mode power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

P-channel transistor, 9.4A, 10uA, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 60V. ID (T=25°C): 9.4A. Idss (max): 10uA. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 60V. C(in): 420pF. Cost): 195pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 83 ns. Type of transistor: MOSFET. Function: QFET, Low gate charge (typ--13ns). G-S Protection: no. Id(imp): 37.6A. ID (T=100°C): 5.95A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. On-resistance Rds On: 0.15 Ohms. RoHS: yes. Spec info: Low Crss (typical 45pF), Fast switching. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 6.5 ns. Technology: DMOS POWER-MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

P-channel transistor, 20A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1C ), 250V. Ic(T=100°C): 20A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1C ). Collector/emitter voltage Vceo: 250V. C(in): 1450pF. Cost): 450pF. CE diode: no. Channel type: P. Function: P-channel MOS IGBT transistor. Germanium diode: no. Collector current: 20A. Ic(pulse): 60A. Number of terminals: 3. Pd (Power Dissipation, Max): 180W. RoHS: yes. Spec info: audio amplifier. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.7V. Gate/emitter voltage VGE: 20V

P-channel transistor, 74A, 250uA, TO-220, TO-220AB, 55V. ID (T=25°C): 74A. Idss (max): 250uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 3400pF. Cost): 1400pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 89 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 260A. ID (T=100°C): 52A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 0.02 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 61 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

P-channel transistor, PCB soldering, TO-220AB, -55V, -74A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: -55V. Drain Current Id [A] @ 25°C: -74A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF4905. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.02 Ohms @ -38A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 18 ns. Switch-off delay tf[nsec.]: 61 ns. Ciss Gate Capacitance [pF]: 3400pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

P-channel transistor, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V, PCB soldering (SMD), D²-PAK, TO-263, -55V, -64A. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 55V. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: -55V. Drain Current Id [A] @ 25°C: -64A. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 61 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F4905S. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.02 Ohms @ -38A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 51 ns. Ciss Gate Capacitance [pF]: 3500pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

P-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, -55V, -64A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: -55V. Drain Current Id [A] @ 25°C: -64A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F4905S. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.02 Ohms @ -38A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 51 ns. Ciss Gate Capacitance [pF]: 3500pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

P-channel transistor, 40A, 250uA, TO-220, TO-220AB, 100V. ID (T=25°C): 40A. Idss (max): 250uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 2700pF. Cost): 790pF. Channel type: P. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 170 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 140A. ID (T=100°C): 29A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 0.06 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 79 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

P-channel transistor, 38A, 250uA, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 100V. ID (T=25°C): 38A. Idss (max): 250uA. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 100V. C(in): 2860pF. Cost): 800pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 170 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 140A. ID (T=100°C): 24A. IDss (min): 50uA. Marking on the case: F5210S. Pd (Power Dissipation, Max): 3.8W. Assembly/installation: surface-mounted component (SMD). Td(off): 72 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

P-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, -100V, -40A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -40A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F5210S. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.06 Ohms @ -24A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 17 ns. Switch-off delay tf[nsec.]: 79 ns. Ciss Gate Capacitance [pF]: 2700pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

P-channel transistor, 31A, 250uA, TO-220, TO-220AB, 55V. ID (T=25°C): 31A. Idss (max): 250uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 1200pF. Cost): 520pF. Channel type: P. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 71 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 110A. ID (T=100°C): 22A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 110W. On-resistance Rds On: 0.06 Ohms. RoHS: yes. Spec info: Dynamic dv/dt Rating. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

P-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, -55V, -31A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: -55V. Drain Current Id [A] @ 25°C: -31A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F5305S. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.06 Ohms @ -16A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 39 ns. Ciss Gate Capacitance [pF]: 1200pF. Maximum dissipation Ptot [W]: 110W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

P-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, -55V, -31A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: -55V. Drain Current Id [A] @ 25°C: -31A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F5305S. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.06 Ohms @ -16A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 39 ns. Ciss Gate Capacitance [pF]: 1200pF. Maximum dissipation Ptot [W]: 110W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

P-channel transistor, 13A, 250uA, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 150V. ID (T=25°C): 13A. Idss (max): 250uA. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 150V. C(in): 860pF. Cost): 220pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 160 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 44A. ID (T=100°C): 9A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 110W. On-resistance Rds On: 0.29 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 53 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V