Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.82$ | 1.82$ |
5 - 9 | 1.73$ | 1.73$ |
10 - 24 | 1.64$ | 1.64$ |
25 - 49 | 1.55$ | 1.55$ |
50 - 99 | 1.51$ | 1.51$ |
100 - 191 | 1.48$ | 1.48$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.82$ | 1.82$ |
5 - 9 | 1.73$ | 1.73$ |
10 - 24 | 1.64$ | 1.64$ |
25 - 49 | 1.55$ | 1.55$ |
50 - 99 | 1.51$ | 1.51$ |
100 - 191 | 1.48$ | 1.48$ |
P-channel transistor, 40A, 1uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 30 v - FDD6685. P-channel transistor, 40A, 1uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 30 v. ID (T=25°C): 40A. Idss (max): 1uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 30 v. C(in): 1715pF. Cost): 440pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 26 ns. Type of transistor: MOSFET. Function: DC/DC voltage converter. Id(imp): 100A. ID (T=100°C): 11A. Note: Logic level gated transistor. Number of terminals: 2. Pd (Power Dissipation, Max): 52W. On-resistance Rds On: 0.014 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 43 ns. Td(on): 17 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. G-S Protection: no. Quantity in stock updated on 14/04/2025, 15:25.
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