Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.65$ | 0.65$ |
10 - 24 | 0.62$ | 0.62$ |
25 - 49 | 0.58$ | 0.58$ |
50 - 95 | 0.55$ | 0.55$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.65$ | 0.65$ |
10 - 24 | 0.62$ | 0.62$ |
25 - 49 | 0.58$ | 0.58$ |
50 - 95 | 0.55$ | 0.55$ |
P-channel transistor, 1.6A, 0.1uA, SOT-23 ( TO-236 ), SOT-23, 20V - FDN338P. P-channel transistor, 1.6A, 0.1uA, SOT-23 ( TO-236 ), SOT-23, 20V. ID (T=25°C): 1.6A. Idss (max): 0.1uA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Voltage Vds(max): 20V. C(in): 451pF. Cost): 75pF. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: Battery management. Id(imp): 5A. IDss (min): n/a. Note: screen printing/SMD code 338. Pd (Power Dissipation, Max): 0.5W. On-resistance Rds On: 0.088 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 16 ns. Td(on): 10 ns. Technology: Specified PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1.5V. Vgs(th) min.: 0.4V. Quantity in stock updated on 14/04/2025, 15:25.
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