P-channel transistor, 1.5A, 10uA, SOT-23 ( TO-236 ), SOT-23, 30 v - FDN358P

P-channel transistor, 1.5A, 10uA, SOT-23 ( TO-236 ), SOT-23, 30 v - FDN358P. P-channel transistor, 1.5A, 10uA, SOT-23 ( TO-236 ), SOT-23, 30 v. ID (T=25°C): 1.5A. Idss: 10uA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Voltage Vds(max): 30 v. C(in): 182pF. Cost): 56pF. Channel type: P. Conditioning: roll. Conditioning unit: 3000. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: Single P-Channel, Logic Level. G-S Protection: no. Id(imp): 5A. IDss (min): 1uA. Marking on the case: 358. Pd (Power Dissipation, Max): 0.5W. On-resistance Rds On: 0.105 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Original product from manufacturer Onsemi (fairchild). Quantity in stock updated on 02/06/2025, 10:25.