FET and MOSFET transistors

P-channel transistor, 7.3A, 7.3A, SO, SO-8, 30 v. ID (T=25°C): 7.3A. Idss (max): 7.3A. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: P. Quantity per case: 2. Function: td(on) 10ns, td(off) 45ns. ID (T=100°C): 5.9A. Number of terminals: 8. Pd (Power Dissipation, Max): 5W. On-resistance Rds On: 0.024 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: TrenchFET ® Power MOSFET (D-S) MOSFET

P-channel transistor, 2.4A, 2.4A, SO, SO-8, 60V. ID (T=25°C): 2.4A. Idss (max): 2.4A. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 60V. Channel type: P. Conditioning: roll. Conditioning unit: 2500. Quantity per case: 2. Number of terminals: 8. Pd (Power Dissipation, Max): 1.4W. On-resistance Rds On: 0.10 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 50 ns. Td(on): 10 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+175°C

P-channel transistor, PCB soldering (SMD), SO8, MS-012, 60V, 3.1A. Housing: PCB soldering (SMD). Housing: SO8. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 3.1A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: SI4948BEY-T1-GE3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.12 Ohms @ -3.1A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 75 ns. Ciss Gate Capacitance [pF]: 800pF. Maximum dissipation Ptot [W]: 2.4W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

P-channel transistor, 4.7A, 10nA, SO, SO-8, 60V. ID (T=25°C): 4.7A. Idss (max): 10nA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 60V. C(in): 600pF. Cost): 70pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 30A. ID (T=100°C): 3.8A. IDss (min): 1nA. Number of terminals: 8. Pd (Power Dissipation, Max): 3.2W. On-resistance Rds On: 0.10 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 35 ns. Td(on): 10 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V

P-channel transistor, 5.3A, 5.3A, SO, SO-8, 30 v. ID (T=25°C): 5.3A. Idss (max): 5.3A. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.055 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: V-MOS

P-channel transistor, PCB soldering (SMD), SO8, MS-012, -20V, -2.3A. Housing: PCB soldering (SMD). Housing: SO8. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: -20V. Drain Current Id [A] @ 25°C: -2.3A. RoHS: no. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: SI9953DY. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.25 Ohms @ 1A. Gate breakdown voltage Ugs [V]: -4.5V. Switch-on time ton [nsec.]: 40 ns. Switch-off delay tf[nsec.]: 90 ns. Ciss Gate Capacitance [pF]: 500pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 8.8A, 10uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=25°C): 8.8A. Idss (max): 10uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 335pF. Cost): 105pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 60us. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 35A. ID (T=100°C): 6.2A. IDss (min): 0.1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.23 Ohms. RoHS: yes. Spec info: ID pulse 35.2A. Assembly/installation: surface-mounted component (SMD). Td(off): 48 ns. Td(on): 16 ns. Technology: SIPMOS Power-Transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V

P-channel transistor, 8.8A, 1uA, TO-220, PG-TO220-3, 60V. ID (T=25°C): 8.8A. Idss (max): 1uA. Housing: TO-220. Housing (according to data sheet): PG-TO220-3. Voltage Vds(max): 60V. C(in): 335pF. Cost): 105pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 60 ns. Type of transistor: MOSFET. Function: Enhancement mode, avalanche rated, dv/dt rated. G-S Protection: no. Id(imp): 32.5A. ID (T=100°C): 6.2A. IDss (min): 0.1uA. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.23 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 48 ns. Td(on): 16 ns. Technology: SIPMOS Power-Transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V

P-channel transistor, 18.7A, 10uA, TO-220, TO-220, 60V. ID (T=25°C): 18.7A. Idss (max): 10uA. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. C(in): 230pF. Cost): 95pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: dv/dt rated Enhancement mode. G-S Protection: diode. Id(imp): 74.8A. ID (T=100°C): 13.2A. IDss (min): 0.1uA. Marking on the case: 18P06P. Number of terminals: 3. Pd (Power Dissipation, Max): 81W. On-resistance Rds On: 0.102 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 12 ns. Technology: SIPMOS Power-Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.7V

P-channel transistor, 10A, 10uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ), 60V. ID (T=25°C): 10A. Idss (max): 10uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ). Voltage Vds(max): 60V. RoHS: yes. C(in): 340pF. Cost): 40pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 20 ns. Type of transistor: MOSFET. Function: switching circuits. G-S Protection: no. Id(imp): 40A. ID (T=100°C): 7.2A. IDss (min): 1uA. Marking on the case: 10P6F6. Number of terminals: 2. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 0.13 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 64 ns. Td(on): 14 ns. Technology: Low gate charge STRipFET™ II Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

P-channel transistor, 80A, 80A, TO-220, TO-220AB, 55V. ID (T=25°C): 80A. Idss (max): 80A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 5500pF. Cost): 1130pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 320A. ID (T=100°C): 57A. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 0.016 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 165 ns. Td(on): 35 ns. Technology: STripFETTM II Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 16V. Vgs(th) min.: 2V

P-channel transistor, PCB soldering, TO-220AB, -60V, -53A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: -60V. Drain Current Id [A] @ 25°C: -53A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: SUP53P06-20. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0195 Ohms @ -30A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 110 ns. Ciss Gate Capacitance [pF]: 3500pF. Maximum dissipation Ptot [W]: 104W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering, TO-92, -100V, -0.23A. Housing: PCB soldering. Housing: TO-92. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -0.23A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: ZVP2110A. Drain current through resistor Rds [Ohm] @ Ids [A]: 8 Ohms @ -0.375A. Gate breakdown voltage Ugs [V]: -3.5V. Switch-on time ton [nsec.]: 7 ns. Switch-off delay tf[nsec.]: 12 ns. Ciss Gate Capacitance [pF]: 100pF. Maximum dissipation Ptot [W]: 0.7W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SOT-23, -60V, -0.09A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -60V. Drain Current Id [A] @ 25°C: -0.09A. RoHS: no. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: ZVP3306F. Drain current through resistor Rds [Ohm] @ Ids [A]: 14 Ohms @ -0.2A. Gate breakdown voltage Ugs [V]: -3.5V. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 8 ns. Ciss Gate Capacitance [pF]: 50pF. Maximum dissipation Ptot [W]: 0.33W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering, TO-92, -240V, -0.2A. Housing: PCB soldering. Housing: TO-92. Drain-source voltage Uds [V]: -240V. Drain Current Id [A] @ 25°C: -0.2A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Drain current through resistor Rds [Ohm] @ Ids [A]: 11 Ohms @ -0.1A. Gate breakdown voltage Ugs [V]: -2.0V. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 200pF. Maximum dissipation Ptot [W]: 0.75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C