Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.11$ | 1.11$ |
5 - 9 | 1.05$ | 1.05$ |
10 - 24 | 1.00$ | 1.00$ |
25 - 31 | 0.94$ | 0.94$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.11$ | 1.11$ |
5 - 9 | 1.05$ | 1.05$ |
10 - 24 | 1.00$ | 1.00$ |
25 - 31 | 0.94$ | 0.94$ |
P-channel transistor, 4A, 10uA, TSOP, SUPERSOT-6, 20V - FDC642P. P-channel transistor, 4A, 10uA, TSOP, SUPERSOT-6, 20V. ID (T=25°C): 4A. Idss (max): 10uA. Housing: TSOP. Housing (according to data sheet): SUPERSOT-6. Voltage Vds(max): 20V. C(in): 700pF. Cost): 110pF. Channel type: P. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 20A. IDss (min): 1uA. Note: screen printing/SMD code 642. Marking on the case: 642. Number of terminals: 6. Pd (Power Dissipation, Max): 1.6W. On-resistance Rds On: 0.045 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 120ns. Td(on): 6 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1.5V. Vgs(th) min.: 0.4V. Function: Load Switch, Battery Protection. Spec info: Low Input Charge. Drain-source protection : yes. G-S Protection: yes. Quantity in stock updated on 14/04/2025, 15:25.
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