Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.74$ | 1.74$ |
5 - 9 | 1.66$ | 1.66$ |
10 - 15 | 1.57$ | 1.57$ |
Quantity | U.P | |
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1 - 4 | 1.74$ | 1.74$ |
5 - 9 | 1.66$ | 1.66$ |
10 - 15 | 1.57$ | 1.57$ |
P-channel transistor, 58A, 1uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 40V - FDD4141. P-channel transistor, 58A, 1uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 40V. ID (T=25°C): 58A. Idss (max): 1uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 40V. C(in): 2085pF. Cost): 360pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Function: 'High performance trench technology'. Id(imp): 100A. ID (T=100°C): 50A. Note: Logic level gated transistor. Marking on the case: FDD4141. Number of terminals: 2. Pd (Power Dissipation, Max): 69W. On-resistance Rds On: 12.3m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 38 ns. Td(on): 10 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Spec info: extremely low RDS(on) resistance. G-S Protection: no. Quantity in stock updated on 14/04/2025, 15:25.
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