Transistors

C(in): 5400pF. Cost): 870pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 410 ns. Type of transistor: MOSFET. Id(imp): 150A. ID (T=100°C): 24A. ID (T=25°C): 38A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. On-resistance Rds On: 0.075 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 22 ns. Technology: HEXFET Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Voltage Vds(max): 250V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Function: fast switching, dynamic dv/dt. G-S Protection: no

C(in): 4660pF. Cost): 460pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 620 ns. Type of transistor: MOSFET. Function: SMPS MOSFET, Low Gate Charge. Id(imp): 110A. ID (T=100°C): 18A. ID (T=25°C): 27A. Idss (max): 250uA. IDss (min): 50uA. Number of terminals: 3. Pd (Power Dissipation, Max): 500W. On-resistance Rds On: 0.18 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 27 ns. Technology: HEXFET Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no

C(in): 13000pF. Cost): 2100pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 140 ns. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. Id(imp): 870A. ID (T=100°C): 148A. ID (T=25°C): 209A. Idss (max): 250uA. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 470W. On-resistance Rds On: 3.6m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 23 ns. Technology: HEXFET ® Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+175°C. Voltage Vds(max): 75V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP2907PBF. Drain-source voltage Uds [V]: 75V. Drain Current Id [A] @ 25°C: 90A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0045 Ohms @ 125A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 23 ns. Switch-off delay tf[nsec.]: 130 ns. Ciss Gate Capacitance [pF]: 13000pF. Maximum dissipation Ptot [W]: 470W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP2907ZPBF. Drain-source voltage Uds [V]: 75V. Drain Current Id [A] @ 25°C: 90A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0045 Ohms @ 90A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 19 ns. Switch-off delay tf[nsec.]: 97 ns. Ciss Gate Capacitance [pF]: 7500pF. Maximum dissipation Ptot [W]: 310W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 8970pF. Cost): 1020pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Type of transistor: MOSFET. Function: High-efficiency synchronous rectification in switching power supplies. Id(imp): 1080A. ID (T=100°C): 190A. ID (T=25°C): 270A. Idss (max): 250uA. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 375W. On-resistance Rds On: 2.1M Ohms. RoHS: yes. Weight: 4.58g. Assembly/installation: PCB through-hole mounting. Td(off): 118 ns. Td(on): 16 ns. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

C(in): 5000pF. Cost): 553pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 170 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 124A. ID (T=100°C): 20A. ID (T=25°C): 31A. Idss (max): 2mA. IDss (min): 50uA. Number of terminals: 3. Pd (Power Dissipation, Max): 460W. On-resistance Rds On: 0.15 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 54 ns. Td(on): 28 ns. Technology: HEXFET Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. G-S Protection: no

C(in): 6540pF. Cost): 720pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Function: High Speed ​​Power Switching. Id(imp): 840A. ID (T=100°C): 140A. ID (T=25°C): 200A. Idss (max): 250uA. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. On-resistance Rds On: 2.4M Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP3415PBF. Drain-source voltage Uds [V]: 150V. Drain Current Id [A] @ 25°C: 43A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.042 Ohms @ 22A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 72 ns. Ciss Gate Capacitance [pF]: 2400pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 2600pF. Cost): 660pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=100°C): 9.6A. ID (T=25°C): 16A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 190W. On-resistance Rds On: 0.3 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 87 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -50...+150°C. Voltage Vds(max): 400V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP350PBF. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 19A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.3 Ohms @ 9.6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 87 ns. Ciss Gate Capacitance [pF]: 2600pF. Maximum dissipation Ptot [W]: 190W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 4500pF. Cost): 1100pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 420 ns. Type of transistor: MOSFET. Id(imp): 92A. ID (T=100°C): 14A. ID (T=25°C): 23A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. On-resistance Rds On: 0.20 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Voltage Vds(max): 400V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

C(in): 3400pF. Cost): 540pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Id(imp): 91A. ID (T=100°C): 14A. ID (T=25°C): 23A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. On-resistance Rds On: 0.20 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 42 ns. Td(on): 16 ns. Technology: Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Voltage Vds(max): 400V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

Manufacturer's marking: IRFP360PBF. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 23A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ 14A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 18 ns. Switch-off delay tf[nsec.]: 100 ns. Ciss Gate Capacitance [pF]: 4500pF. Maximum dissipation Ptot [W]: 280W. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 23A. Power: 280W. On-resistance Rds On: 0.20 Ohms. Housing: TO-247AC HV. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Drain-source voltage (Vds): 400V

C(in): 3000pF. Cost): 640pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 210 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 180A. ID (T=100°C): 40A. ID (T=25°C): 57A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 0.026 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 58 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: FastSwitch. ID (T=100°C): 40A. ID (T=25°C): 51A. Idss (max): 51A. Pd (Power Dissipation, Max): 180W. On-resistance Rds On: 0.023 Ohms. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 100V

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP3710PBF. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 40A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.025 Ohms @ 28A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 58 ns. Ciss Gate Capacitance [pF]: 3000pF. Maximum dissipation Ptot [W]: 200W. Housing (JEDEC standard): 180W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 4600pF. Cost): 460pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: PDP MOSFET. Id(imp): 260A. ID (T=100°C): 46A. ID (T=25°C): 65A. Idss (max): 1mA. IDss (min): 20uA. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 330W. On-resistance Rds On: 0.021 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 33 ns. Technology: HEXFET Power-MOSFET, PDP SWITCH. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -40...+175°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no

C(in): 4560pF. Cost): 390pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Trr Diode (Min.): 190 ns. Type of transistor: MOSFET. Function: PDP MOSFET. Id(imp): 180A. ID (T=100°C): 31A. ID (T=25°C): 44A. Idss (max): 1mA. IDss (min): 20uA. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 310W. On-resistance Rds On: 0.038 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 44 ns. Technology: HEXFET Power-MOSFET, PDP SWITCH. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -40...+175°C. Voltage Vds(max): 250V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Weight: 5.8g. Drain-source protection : yes. G-S Protection: no

C(in): 7370pF. Cost): 520pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Id(imp): 190A. ID (T=100°C): 33A. ID (T=25°C): 46A. Idss (max): 150uA. IDss (min): 5uA. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 430W. On-resistance Rds On: 0.049 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power-MOSFET, PDP SWITCH. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -40...+175°C. Voltage Vds(max): 300V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Spec info: Idm--190Ap.. G-S Protection: no

C(in): 5860pF. Cost): 530pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 190 ns. Type of transistor: MOSFET. Function: PDP Switch. Id(imp): 230A. ID (T=100°C): 40A. ID (T=25°C): 57A. Idss (max): 1mA. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 360W. On-resistance Rds On: 0.029 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power-MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -40...+175°C. Voltage Vds(max): 250V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Spec info: Idm--230Ap. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP4468PBF. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 195A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0026 Ohms @ 180A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 52 ns. Switch-off delay tf[nsec.]: 160 ns. Ciss Gate Capacitance [pF]: 19860pF. Maximum dissipation Ptot [W]: 520W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 2600pF. Cost): 420pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Trr Diode (Min.): 540 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 56A. ID (T=100°C): 8.7A. ID (T=25°C): 14A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. On-resistance Rds On: 0.4 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 92us. Td(on): 17us. Technology: HEXFET Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

C(in): 2200pF. Cost): 320pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 580us. Type of transistor: MOSFET. Function: Ultra low Gate Charger. Id(imp): 56A. ID (T=100°C): 8.6A. ID (T=25°C): 14A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. On-resistance Rds On: 0.4 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-247. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP450LCPBF. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 14A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.4 Ohms @ 8.4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 2200pF. Maximum dissipation Ptot [W]: 190W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C