Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.67$ | 1.67$ |
5 - 9 | 1.58$ | 1.58$ |
10 - 24 | 1.50$ | 1.50$ |
25 - 42 | 1.42$ | 1.42$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.67$ | 1.67$ |
5 - 9 | 1.58$ | 1.58$ |
10 - 24 | 1.50$ | 1.50$ |
25 - 42 | 1.42$ | 1.42$ |
N-channel transistor, 49A, 71A, 250uA, 0.011 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V - IRFR3505. N-channel transistor, 49A, 71A, 250uA, 0.011 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=100°C): 49A. ID (T=25°C): 71A. Idss (max): 250uA. On-resistance Rds On: 0.011 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 2030pF. Cost): 470pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Id(imp): 280A. IDss (min): 20uA. Number of terminals: 2. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 43 ns. Td(on): 13 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: AUTOMOTIVE MOSFET. Function: Ultra Low On-Resistance, Fast Switching. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 19/04/2025, 23:25.
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