IRFPG50

Quantity	excl. VAT	VAT incl.
1 - 1	5.82$	5.82$
2 - 2	5.53$	5.53$
3 - 4	5.24$	5.24$
5 - 9	4.95$	4.95$
10 - 19	4.83$	4.83$
20 - 29	4.72$	4.72$
30 - 52	4.54$	4.54$

Quantity	U.P
1 - 1	5.82$	5.82$
2 - 2	5.53$	5.53$
3 - 4	5.24$	5.24$
5 - 9	4.95$	4.95$
10 - 19	4.83$	4.83$
20 - 29	4.72$	4.72$
30 - 52	4.54$	4.54$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 52

Set of 1

IRFPG50. C(in): 2800pF. Cost): 250pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 630 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 24A. ID (T=100°C): 3.9A. ID (T=25°C): 6.1A. Idss (max): 500uA. IDss (min): 100uA. Pd (Power Dissipation, Max): 190W. On-resistance Rds On: 2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 19 ns. Technology: HEXFET® Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Voltage Vds(max): 1000V. Gate/emitter voltage VGE(th) min.: 2V. Vgs(th) max.: 4 v. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 25/12/2024, 13:25.

Technical documentation

Information and technical help

By phone :

By email

Terms of Sales

Payment and delivery

Delivery in 2-3 days, with postal tracking!