IRFR5305

Quantity	excl. VAT	VAT incl.
1 - 4	0.89$	0.89$
5 - 9	0.84$	0.84$
10 - 24	0.80$	0.80$
25 - 49	0.75$	0.75$
50 - 99	0.74$	0.74$
100 - 217	0.72$	0.72$

Quantity	U.P
1 - 4	0.89$	0.89$
5 - 9	0.84$	0.84$
10 - 24	0.80$	0.80$
25 - 49	0.75$	0.75$
50 - 99	0.74$	0.74$
100 - 217	0.72$	0.72$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 217

Set of 1

IRFR5305. C(in): 1200pF. Cost): 520pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 71ms. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 110A. ID (T=100°C): 22A. ID (T=25°C): 31A. Idss (max): 250uA. IDss (min): 25uA. Marking on the case: IRFR5305. Number of terminals: 2. Pd (Power Dissipation, Max): 110W. On-resistance Rds On: 0.065 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 39 ns. Td(on): 14 ns. Technology: HEXFET ® Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 24/12/2024, 01:25.

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Delivery in 2-3 days, with postal tracking!