Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.89$ | 0.89$ |
5 - 9 | 0.84$ | 0.84$ |
10 - 24 | 0.80$ | 0.80$ |
25 - 49 | 0.75$ | 0.75$ |
50 - 99 | 0.73$ | 0.73$ |
100 - 125 | 0.72$ | 0.72$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.89$ | 0.89$ |
5 - 9 | 0.84$ | 0.84$ |
10 - 24 | 0.80$ | 0.80$ |
25 - 49 | 0.75$ | 0.75$ |
50 - 99 | 0.73$ | 0.73$ |
100 - 125 | 0.72$ | 0.72$ |
IRFR110. C(in): 180pF. Cost): 80pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 17A. ID (T=100°C): 2.7A. ID (T=25°C): 4.3A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 25W. On-resistance Rds On: 0.54 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 6.9ns. Technology: HEXFET Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 13/01/2025, 17:25.
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