IRFR3709Z

Quantity	excl. VAT	VAT incl.
1 - 4	1.36$	1.36$
5 - 9	1.29$	1.29$
10 - 24	1.22$	1.22$
25 - 49	1.15$	1.15$
50 - 84	1.13$	1.13$

Quantity	U.P
1 - 4	1.36$	1.36$
5 - 9	1.29$	1.29$
10 - 24	1.22$	1.22$
25 - 49	1.15$	1.15$
50 - 84	1.13$	1.13$

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Quantity in stock : 84

Set of 1

IRFR3709Z. C(in): 2330pF. Cost): 460pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Id(imp): 340A. ID (T=100°C): 61A. ID (T=25°C): 86A. Idss (max): 150uA. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 79W. On-resistance Rds On: 5.2m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 12 ns. Technology: HEXFET® Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.25V. Vgs(th) min.: 1.35V. Spec info: AUTOMOTIVE MOSFET. Function: Ultra Low On-Resistance, Ultra-Low Gate Impedance. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 13/01/2025, 17:25.

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Delivery in 2-3 days, with postal tracking!