Transistors

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: ITO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFI740G. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 5.4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.55 Ohms @ 3.2A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 54 ns. Ciss Gate Capacitance [pF]: 1370pF. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Housing (JEDEC standard): 0.55 Ohms 40W

Channel type: N. Type of transistor: MOSFET power transistor. Max drain current: 4.6A. On-resistance Rds On: 0.85 Ohm 40W. Housing: TO-220-F. Type of transistor: MOSFET. G-S Protection: diode. Id(imp): 18A. ID (T=100°C): 2.9A. ID (T=25°C): 4.6A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.85 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source voltage (Vds): 500V

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: ITO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFI840GPBF. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 4.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.85 Ohms @ 2.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 55 ns. Ciss Gate Capacitance [pF]: 1300pF. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering. Housing: ITO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFI9540GPBF. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -11A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ -6.6A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 24 ns. Switch-off delay tf[nsec.]: 51 ns. Ciss Gate Capacitance [pF]: 1400pF. Maximum dissipation Ptot [W]: 48W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. ID (T=100°C): 2.7A. ID (T=25°C): 4.3A. Idss (max): 4.3A. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 0.8 Ohms. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. Function: td(on) 12ns, td(off) 28ns

Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. ID (T=100°C): 2.6A. ID (T=25°C): 4.1A. Idss (max): 4.1A. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 1 Ohm. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 250V. Function: td(on) 12ns, td(off) 34ns

C(in): 350pF. Cost): 48pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 290ms. Type of transistor: MOSFET. Id(imp): 6A. ID (T=100°C): 1.1A. ID (T=25°C): 1.7A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 4.4 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

C(in): 660pF. Cost): 86pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Id(imp): 10A. ID (T=100°C): 1.5A. ID (T=25°C): 2.5A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 2.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Function: Switching. G-S Protection: no

C(in): 1300pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 470ms. Type of transistor: MOSFET. Id(imp): 14A. ID (T=100°C): 2.2A. ID (T=25°C): 3.5A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 1.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: ITO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFIBF30GPBF. Drain-source voltage Uds [V]: 900V. Drain Current Id [A] @ 25°C: 1.9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 3.7 Ohms @ 1.1A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 90 ns. Ciss Gate Capacitance [pF]: 1200pF. Maximum dissipation Ptot [W]: 35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Channel type: N. On-resistance Rds On: 0.024 Ohms. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=100°C): 22A. ID (T=25°C): 31A. Idss (max): 31A. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 55V

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FL014N. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 1.9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.16 Ohms @ 1.9A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 6.6 ns. Switch-off delay tf[nsec.]: 12 ns. Ciss Gate Capacitance [pF]: 190pF. Maximum dissipation Ptot [W]: 2.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FA. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 2.7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ 1.6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 13 ns. Ciss Gate Capacitance [pF]: 300pF. Maximum dissipation Ptot [W]: 3.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 400pF. Cost): 145pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 35 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 11.2A. ID (T=100°C): 2.3A. ID (T=25°C): 2.8A. Idss (max): 250uA. IDss (min): 25uA. Equivalents: IRFL024NPBF. Number of terminals: 3. Pd (Power Dissipation, Max): 2.1W. On-resistance Rds On: 0.075 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 22.2 ns. Td(on): 8.1 ns. Technology: HEXFET Power MOSFET. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Operating temperature: -55...+150°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FL024N. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 2.8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.075 Ohms @ 2.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8.1 ns. Switch-off delay tf[nsec.]: 22 ns. Ciss Gate Capacitance [pF]: 400pF. Maximum dissipation Ptot [W]: 2.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. ID (T=100°C): 0.96A. ID (T=25°C): 1.5A. Idss (max): 1.5A. Note: b47kaa. Pd (Power Dissipation, Max): 3.1W. On-resistance Rds On: 0.54 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 100V

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FL110. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 1.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.25 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 6.9ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 180pF. Maximum dissipation Ptot [W]: 3.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 140pF. Cost): 53pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Id(imp): 7.7A. ID (T=100°C): 0.6A. ID (T=25°C): 0.96A. Idss (max): 250uA. IDss (min): 25uA. Note: screen printing/SMD code FC. Marking on the case: FC. Number of terminals: 4. Pd (Power Dissipation, Max): 3.1W. On-resistance Rds On: 1.5 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 14 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FC. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 0.96A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.5 Ohms @ 0.58A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8.2 ns. Switch-off delay tf[nsec.]: 14 ns. Ciss Gate Capacitance [pF]: 140pF. Maximum dissipation Ptot [W]: 3.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. C(in): 660pF. Cost): 230pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 55 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 30A. ID (T=100°C): 3A. ID (T=25°C): 5.2A. Idss (max): 250uA. IDss (min): 25uA. IGF: 660pF. Number of terminals: 4. Pd (Power Dissipation, Max): 2.1W. On-resistance Rds On: 0.045 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 7.1 ns. Technology: HEXFET Power MOSFET. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Operating temperature: -55...+150°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FL4310. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 1.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ 1.6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 7.8 ns. Switch-off delay tf[nsec.]: 34 ns. Ciss Gate Capacitance [pF]: 330pF. Maximum dissipation Ptot [W]: 2.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FE. Drain-source voltage Uds [V]: -60V. Drain Current Id [A] @ 25°C: -0.18A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.5 Ohms @ -1.1A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 9.6 ns. Ciss Gate Capacitance [pF]: 270pF. Maximum dissipation Ptot [W]: 3.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 200pF. Cost): 94pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Id(imp): 8.8A. ID (T=100°C): 0.69A. ID (T=25°C): 1.1A. Idss (max): 500uA. IDss (min): 100uA. Pd (Power Dissipation, Max): 3.1W. On-resistance Rds On: 1.2 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Operating temperature: -55...+150°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FF. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -1.1A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.2 Ohms @ -0.66A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 200pF. Maximum dissipation Ptot [W]: 3.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: no. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP044N. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 53A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.02 Ohms @ 29A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 43 ns. Ciss Gate Capacitance [pF]: 1500pF. Maximum dissipation Ptot [W]: 120W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Housing (JEDEC standard): 1. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 12 ns. Technology: HEXFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 55V