Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.87$ | 0.87$ |
5 - 9 | 0.82$ | 0.82$ |
10 - 24 | 0.78$ | 0.78$ |
25 - 49 | 0.74$ | 0.74$ |
50 - 57 | 0.72$ | 0.72$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.87$ | 0.87$ |
5 - 9 | 0.82$ | 0.82$ |
10 - 24 | 0.78$ | 0.78$ |
25 - 49 | 0.74$ | 0.74$ |
50 - 57 | 0.72$ | 0.72$ |
IRFL210. C(in): 140pF. Cost): 53pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Id(imp): 7.7A. ID (T=100°C): 0.6A. ID (T=25°C): 0.96A. Idss (max): 250uA. IDss (min): 25uA. Note: screen printing/SMD code FC. Marking on the case: FC. Number of terminals: 4. Pd (Power Dissipation, Max): 3.1W. On-resistance Rds On: 1.5 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 14 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 13/01/2025, 05:25.
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