Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.26$ | 2.26$ |
5 - 9 | 2.15$ | 2.15$ |
10 - 24 | 2.03$ | 2.03$ |
25 - 49 | 1.92$ | 1.92$ |
50 - 68 | 1.91$ | 1.91$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.26$ | 2.26$ |
5 - 9 | 2.15$ | 2.15$ |
10 - 24 | 2.03$ | 2.03$ |
25 - 49 | 1.92$ | 1.92$ |
50 - 68 | 1.91$ | 1.91$ |
IRFI840G. Channel type: N. Type of transistor: MOSFET power transistor. Max drain current: 4.6A. On-resistance Rds On: 0.85 Ohm 40W. Housing: TO-220-F. Type of transistor: MOSFET. G-S Protection: diode. Id(imp): 18A. ID (T=100°C): 2.9A. ID (T=25°C): 4.6A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.85 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source voltage (Vds): 500V. Quantity in stock updated on 26/12/2024, 04:25.
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