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IRFIBC20G

IRFIBC20G
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.87$ 1.87$
5 - 9 1.78$ 1.78$
10 - 24 1.68$ 1.68$
25 - 31 1.59$ 1.59$
Quantity U.P
1 - 4 1.87$ 1.87$
5 - 9 1.78$ 1.78$
10 - 24 1.68$ 1.68$
25 - 31 1.59$ 1.59$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 31
Set of 1

IRFIBC20G. C(in): 350pF. Cost): 48pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 290ms. Type of transistor: MOSFET. Id(imp): 6A. ID (T=100°C): 1.1A. ID (T=25°C): 1.7A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 4.4 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 13/01/2025, 05:25.

Equivalent products :

Quantity in stock : 12
IRFIBC30G

IRFIBC30G

C(in): 660pF. Cost): 86pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case...
IRFIBC30G
C(in): 660pF. Cost): 86pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Id(imp): 10A. ID (T=100°C): 1.5A. ID (T=25°C): 2.5A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 2.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Function: Switching. G-S Protection: no
IRFIBC30G
C(in): 660pF. Cost): 86pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Id(imp): 10A. ID (T=100°C): 1.5A. ID (T=25°C): 2.5A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 2.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Function: Switching. G-S Protection: no
Set of 1
2.61$ VAT incl.
(2.61$ excl. VAT)
2.61$

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IRFBC30

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