Transistors

C(in): 2400pF. Cost): 1300pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 120ns. Type of transistor: MOSFET. Function: PowerMOSFET. Id(imp): 290A. ID (T=100°C): 52A. ID (T=25°C): 70A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. On-resistance Rds On: 0.018 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 210 ns. Td(on): 8.1 ns. Technology: HEXFET Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

C(in): 1900pF. Cost): 620pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 94 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 210A. ID (T=100°C): 45A. ID (T=25°C): 64A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. On-resistance Rds On: 0.016 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 32 ns. Td(on): 11 ns. Technology: HEXFET ® Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

C(in): 4500pF. Cost): 2000pF. Channel type: N. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. Id(imp): 360A. ID (T=100°C): 64A. ID (T=25°C): 70A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. On-resistance Rds On: 0.014 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 83 ns. Td(on): 20 ns. Technology: Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

C(in): 2900pF. Cost): 880pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 81 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 290A. ID (T=100°C): 57A. ID (T=25°C): 81A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 170W. On-resistance Rds On: 0.012 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 11 ns. Technology: HEXFET® Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

C(in): 4000pF. Cost): 1300pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 390A. ID (T=100°C): 59A. ID (T=25°C): 110A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 0.008 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: Ultra Low On-Resistance. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP064NPBF. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 110A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.008 Ohms @ 59A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 43 ns. Ciss Gate Capacitance [pF]: 4000pF. Maximum dissipation Ptot [W]: 200W. Housing (JEDEC standard): 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP064PBF. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 70A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.009 Ohms @ 78A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 21 ns. Switch-off delay tf[nsec.]: 110 ns. Ciss Gate Capacitance [pF]: 7400pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 1700pF. Cost): 550pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 180 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 60.4k Ohms. ID (T=100°C): 22A. ID (T=25°C): 31A. Idss (max): 250uA. IDss (min): 25uA. Note: complementary transistor (pair) IRFP9140. Pd (Power Dissipation, Max): 180W. On-resistance Rds On: 0.077 Ohms. RoHS: yes. Td(off): 53 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Power: 180W. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

C(in): 5600pF. Cost): 1310pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Fast Switching, Advanced Process Technology, Ultra Low On-Resistance. Id(imp): 640A. ID (T=100°C): 110A. ID (T=25°C): 160A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 310W. On-resistance Rds On: 0.0042 Ohms. RoHS: yes. Td(off): 140 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Power: 310W. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: PowerMOSFET. ID (T=25°C): 31A. Idss (max): 31A. Pd (Power Dissipation, Max): 131W. On-resistance Rds On: 0.51 Ohms. Assembly/installation: PCB through-hole mounting. Technology: HEXFET. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 100V

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: PowerMOSFET. ID (T=100°C): 16A. ID (T=25°C): 33A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 140W. On-resistance Rds On: 0.052 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 8.2 ns. Technology: HEXFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 100V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

C(in): 2800pF. Cost): 1100pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Trr Diode (Min.): 220 ns. Type of transistor: MOSFET. Id(imp): 160A. ID (T=100°C): 29A. ID (T=25°C): 41A. Idss (max): 250uA. IDss (min): 25uA. Marking on the case: IRFP150. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. On-resistance Rds On: 0.55 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: HEXFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

C(in): 1900pF. Cost): 450pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 180 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 140A. ID (T=100°C): 30A. ID (T=25°C): 42A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. On-resistance Rds On: 0.36 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 11 ns. Technology: HEXFET® Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP150NPBF. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 42A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.036 Ohms @ 23A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 1900pF. Maximum dissipation Ptot [W]: 160W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP150PBF. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 42A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.036 Ohms @ 23A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 60 ns. Ciss Gate Capacitance [pF]: 2800pF. Maximum dissipation Ptot [W]: 160W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 3450pF. Cost): 513pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: SMPS MOSFET. Id(imp): 88A. ID (T=100°C): 13A. ID (T=25°C): 22A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 277W. On-resistance Rds On: 0.23 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 47 ns. Td(on): 26 ns. Technology: HEXFET Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

C(in): 1300pF. Cost): 400pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 80A. ID (T=100°C): 12A. ID (T=25°C): 20A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 0.18 Ohms. RoHS: yes. Weight: 4.6g. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: complementary transistor (pair) IRFP9240. Drain-source protection : yes. G-S Protection: no

Housing: TO-247AC. Number of terminals: 3. Manufacturer's marking: IRFP240PBF. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 20A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.18 Ohms @ 12A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 1300pF. Maximum dissipation Ptot [W]: 150W. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 20A. Power: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Drain-source voltage (Vds): 200V

C(in): 2159pF. Cost): 315pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 186 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 60.4k Ohms. ID (T=100°C): 21A. ID (T=25°C): 30A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 214W. On-resistance Rds On: 0.075 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 41 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+175°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

Housing: TO-247AC. Manufacturer's marking: IRFP250NPBF. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 30A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.075 Ohms @ 18A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 41 ns. Ciss Gate Capacitance [pF]: 2159pF. Maximum dissipation Ptot [W]: 214W. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 30A. Power: 214W. On-resistance Rds On: 0.075 Ohms. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Drain-source voltage (Vds): 200V

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP250PBF. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 30A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.085 Ohms @ 18A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 70 ns. Ciss Gate Capacitance [pF]: 2800pF. Maximum dissipation Ptot [W]: 190W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP254PBF. Drain-source voltage Uds [V]: 250V. Drain Current Id [A] @ 25°C: 23A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.14 Ohms @ 14A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 74 ns. Ciss Gate Capacitance [pF]: 2700pF. Maximum dissipation Ptot [W]: 190W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 4057pF. Cost): 603pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 268 ns. Type of transistor: MOSFET. Function: dynamic dv/dt ratio, fast switching. Id(imp): 200A. ID (T=100°C): 35A. ID (T=25°C): 50A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 0.04 Ohms. RoHS: yes. Weight: 5.57g. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+175°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-247. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP260NPBF. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 50A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.04 Ohms @ 28A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 17 ns. Switch-off delay tf[nsec.]: 55 ns. Ciss Gate Capacitance [pF]: 4057pF. Maximum dissipation Ptot [W]: 300W. Housing (JEDEC standard): 280W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFP260PBF. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 46A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.055 Ohms @ 28A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 23 ns. Switch-off delay tf[nsec.]: 100 ns. Ciss Gate Capacitance [pF]: 5200pF. Maximum dissipation Ptot [W]: 280W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C