Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.96$ | 0.96$ |
5 - 9 | 0.91$ | 0.91$ |
10 - 24 | 0.86$ | 0.86$ |
25 - 49 | 0.82$ | 0.82$ |
50 - 93 | 0.80$ | 0.80$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.96$ | 0.96$ |
5 - 9 | 0.91$ | 0.91$ |
10 - 24 | 0.86$ | 0.86$ |
25 - 49 | 0.82$ | 0.82$ |
50 - 93 | 0.80$ | 0.80$ |
IRFL9110. C(in): 200pF. Cost): 94pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Id(imp): 8.8A. ID (T=100°C): 0.69A. ID (T=25°C): 1.1A. Idss (max): 500uA. IDss (min): 100uA. Pd (Power Dissipation, Max): 3.1W. On-resistance Rds On: 1.2 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Operating temperature: -55...+150°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 13/01/2025, 05:25.
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