Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.31$ | 1.31$ |
5 - 9 | 1.24$ | 1.24$ |
10 - 24 | 1.17$ | 1.17$ |
25 - 49 | 0.92$ | 0.92$ |
50 - 99 | 0.90$ | 0.90$ |
100 - 249 | 0.88$ | 0.88$ |
250 - 359 | 0.87$ | 0.87$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.31$ | 1.31$ |
5 - 9 | 1.24$ | 1.24$ |
10 - 24 | 1.17$ | 1.17$ |
25 - 49 | 0.92$ | 0.92$ |
50 - 99 | 0.90$ | 0.90$ |
100 - 249 | 0.88$ | 0.88$ |
250 - 359 | 0.87$ | 0.87$ |
IRFL4105PBF. RoHS: yes. C(in): 660pF. Cost): 230pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 55 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 30A. ID (T=100°C): 3A. ID (T=25°C): 5.2A. Idss (max): 250uA. IDss (min): 25uA. IGF: 660pF. Number of terminals: 4. Pd (Power Dissipation, Max): 2.1W. On-resistance Rds On: 0.045 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 7.1 ns. Technology: HEXFET Power MOSFET. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Operating temperature: -55...+150°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 10/01/2025, 17:25.
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