HGTG12N60A4D

Quantity	excl. VAT	VAT incl.
1 - 1	6.74$	6.74$
2 - 2	6.40$	6.40$
3 - 4	6.06$	6.06$
5 - 9	5.73$	5.73$
10 - 19	5.59$	5.59$
20 - 29	5.67$	5.67$
30 - 193	6.78$	6.78$

Quantity	U.P
1 - 1	6.74$	6.74$
2 - 2	6.40$	6.40$
3 - 4	6.06$	6.06$
5 - 9	5.73$	5.73$
10 - 19	5.59$	5.59$
20 - 29	5.67$	5.67$
30 - 193	6.78$	6.78$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 193

Set of 1

HGTG12N60A4D. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: SMPS, IGBT with Anti-Parallel Hyperfast Diode. Production date: 2014/17. Collector current: 54A. Ic(pulse): 96A. Ic(T=100°C): 23A. Marking on the case: 12N60A4D. Pd (Power Dissipation, Max): 167W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 96 ns. Td(on): 17 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2V. Maximum saturation voltage VCE(sat): 2.7V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.6V. Gate/emitter voltage VGE(th)max.: 5.6V. Number of terminals: 3. Spec info: >100kHz, 390V, 12A. CE diode: no. Germanium diode: no. Quantity in stock updated on 12/01/2025, 02:25.

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Delivery in 2-3 days, with postal tracking!