GT30J324

GT30J324. C(in): 4650pF. Channel type: N. Function: High Power Switching Applications. Collector current: 30A. Ic(pulse): 60A. Temperature: +150°C. Pd (Power Dissipation, Max): 170W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 0.3 ns. Td(on): 0.09 ns. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3P. Saturation voltage VCE(sat): 2V. Maximum saturation voltage VCE(sat): 2.45V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 3. Spec info: insulated gate bipolar transistor (IGBT). CE diode: yes. Germanium diode: no. Quantity in stock updated on 12/01/2025, 02:25.