Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.42$ | 1.42$ |
5 - 9 | 1.35$ | 1.35$ |
10 - 20 | 1.27$ | 1.27$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.42$ | 1.42$ |
5 - 9 | 1.35$ | 1.35$ |
10 - 20 | 1.27$ | 1.27$ |
GJ9971. C(in): 1700pF. Cost): 160pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 37 ns. Type of transistor: MOSFET. Function: Logic level gated transistor. Id(imp): 80A. ID (T=100°C): 16A. ID (T=25°C): 25A. Idss (max): 25uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 39W. On-resistance Rds On: 0.036 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 26 ns. Td(on): 9 ns. Technology: ENHANCEMENT MODE POWER MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Number of terminals: 2. Quantity per case: 1. Spec info: IDM--80A pulse. G-S Protection: no. Quantity in stock updated on 12/01/2025, 02:25.
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