HGTG10N120BND

Quantity	excl. VAT	VAT incl.
1 - 1	6.24$	6.24$
2 - 2	5.92$	5.92$
3 - 4	5.61$	5.61$
5 - 9	5.30$	5.30$
10 - 19	5.18$	5.18$
20 - 29	5.05$	5.05$
30 - 47	4.86$	4.86$

Quantity	U.P
1 - 1	6.24$	6.24$
2 - 2	5.92$	5.92$
3 - 4	5.61$	5.61$
5 - 9	5.30$	5.30$
10 - 19	5.18$	5.18$
20 - 29	5.05$	5.05$
30 - 47	4.86$	4.86$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 47

Set of 1

HGTG10N120BND. Channel type: N. Conditioning: plastic tube. Collector current: 35A. Ic(pulse): 80A. Ic(T=100°C): 17A. Marking on the case: 10N120BND. Pd (Power Dissipation, Max): 298W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 165 ns. Td(on): 23 ns. Technology: NPT series IGBT transistor with anti-parallel hyperfast diode. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.45V. Maximum saturation voltage VCE(sat): 2.7V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 6V. Gate/emitter voltage VGE(th)max.: 6.8V. Number of terminals: 3. Conditioning unit: 30. CE diode: yes. Germanium diode: no. Quantity in stock updated on 12/01/2025, 02:25.

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Delivery in 2-3 days, with postal tracking!